DNBT8105 1A NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Collector Current Rating Complementary Version Available (DPBT8105) Lead Free By Design/RoHS Compliant (Note 2) "Green Device" (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) • • • • • • C E B Device Schematic Top View Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Value 80 60 5 1 2 Unit V V V A A Symbol PD RθJA TJ, TSTG Value 600 209 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 1) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 1) @ TA = 25°C Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain @TA = 25°C unless otherwise specified Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO 80 60 5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 100 100 V V V nA nA nA hFE 100 100 80 30 ⎯ 300 ⎯ ⎯ 0.25 0.5 1.1 1.0 10 ⎯ Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product VBE(SAT) VBE(ON) ⎯ ⎯ ⎯ ⎯ Cobo fT ⎯ 150 Notes: ⎯ V V V pF MHz Test Condition IC = 100μA, IE = 0 IC = 10mA, IB = 0 IE = 100μA, IC = 0 VCB = 60V, IE = 0 VCES = 60V VEB = 4V, IC = 0 IC = 1mA, VCE = 5V IC = 500mA, VCE = 5V IC = 1A, VCE = 5V IC = 2A, VCE = 5V IC = 500mA, IB = 50mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA IC = 1A, VCE = 5V VCB = 10V, f = 1.0MHz VCE = 10V, IC = 50mA, f = 100MHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect. DNBT8105 Document number: DS30513 Rev. 9 - 2 1 of 4 www.diodes.com January 2009 © Diodes Incorporated DNBT8105 800 350 700 300 PD, POWER DISSIPATION (mW) VCE = 5V hFE, DC CURRENT GAIN 600 500 400 300 200 100 250 TA = 85ºC 200 TA = 25ºC 150 50 RθJA = 209 °C/W 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1) 200 300 350 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV) 250 200 TA = 125ºC 150 TA = 85ºC 100 TA = 25ºC 50 300 250 200 150 100 50 0 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 100 1,000 10 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 VCE = 5V 1.0 TA = -55ºC 0.8 TA = 25ºC 0.6 T A = 85ºC TA = 125ºC 0.4 0.2 0 1 100 10 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current DNBT8105 Document number: DS30513 Rev. 9 - 2 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 10,000 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 DC Current Gain vs. Collector Current 1 400 IC/IB = 10 0 TA = -55ºC 100 0 VCE (SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV) TA = 125ºC 1.2 1.0 0.8 0.6 0.4 0.2 2 of 4 www.diodes.com 0 1 100 10 1,000 10,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current January 2009 © Diodes Incorporated DNBT8105 120 CAPACITANCE (pF) 100 80 60 40 20 0 10 15 5 20 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics 0 Ordering Information (Note 5) Part Number DNBT8105-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information K81 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: S = 2005) M = Month (ex: 9 = September) Date Code Key Year Code 2004 R 2005 S 2006 T 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z 2013 A 2014 B 2015 C Month Code Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D K81 Package Outline Dimensions A SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K M K1 D J F G DNBT8105 Document number: DS30513 Rev. 9 - 2 L 3 of 4 www.diodes.com January 2009 © Diodes Incorporated DNBT8105 Suggested Pad Layout Y Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DNBT8105 Document number: DS30513 Rev. 9 - 2 4 of 4 www.diodes.com January 2009 © Diodes Incorporated