DIODES BC847BLD_1

BC847BLD
SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE
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Features
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Low Deviation in Base-Emitter Voltage
Surface Mount Package
Ideally Suited for Automated Assembly Processes
Lead Free by Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
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SOT-23
C
Case: SOT-23
Case material: Molded Plastic. “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Maximum Ratings
3
1
2
B
E
Schematic & Pin Configuration
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Output Current - Continuous (Note 3)
Peak Collector Current
Peak Emitter Current
Power Dissipation (Note 3)
Power Deration
Symbol
VCBO
VCEO
VEBO
IC
ICM
IEM
Pd
Pder
Value
50
45
6
200
200
200
300
2.4
Unit
V
V
V
mA
mA
mA
mW
mW/°C
Characteristic
Thermal Resistance, Junction to Ambient Air (Note 3)
Symbol
RθJA
Value
417
Unit
°C/W
Operating and Storage Junction Temperature Range
Tj, TSTG
-55 to +150
°C
Thermal Characteristics
Notes:
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30824 Rev. 4 - 2
1 of 4
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BC847BLD
© Diodes Incorporated
Electrical Characteristics: NPN Transistor
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current (IBEX)
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
50
45
6
—
—
—
—
—
—
—
Collector-Base Cut Off Current
ICBO
—
—
Collector-Emitter Cut Off Current, IO(OFF)
Emitter-Base Cut Off Current
ON CHARACTERISTICS (Note 4)
ICEO
IEBO
—
—
—
—
—
—
—
15
15
15
5
50
50
V
V
V
nA
nA
nA
μA
nA
nA
IC = 10μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
VCE = 50V, VEB(OFF) = 3.0V
VCE = 40V, VEB(OFF) = 3.0V
VCB = 40V, IE = 0
o
VCB = 30V, TA = 150 C
VCE = 40V, IB = 0
VEB = 5V, IC = 0
180
150
220
220
150
150
—
—
647
—
—
—
—
—
—
—
—
0.09
0.2
657
—
—
—
—
—
—
—
—
0.18
0.4
667
0.8
0.9
—
—
—
—
—
—
V
V
mV
V
V
VCE = 5V, IC = 100μA
VCE = 5V, IC = 500μA
VCE = 5V, IC = 1mA
VCE = 5V, IC = 2mA
VCE = 5V, IC = 5mA
VCE = 5V, IC = 10mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
VCE = 5V, IC = 2mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
COBO
—
3
—
pF
VCB = 5.0V, f = 1.0 MHz,
IE = 0
hie
hre
hfe
hoe
—
—
—
—
—
—
—
—
Current Gain-Bandwidth Product
fT
100
4.5
2
200
30
—
Noise Figure
NF
—
—
10
DC Current Gain
hfe
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Turn-On Voltage
VBE(ON)
Base-Emitter Saturation Voltage
VBE(SAT)
Test Condition
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
4. Short duration pulse test used to minimize self-heating effect.
350
450
300
400
TA = 150°C
350
250
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (mW)
Notes:
—
KΩ
x 10E-4 VCE = 5.0V, IC = 2mA,
f = 1.0KHz
—
μS
VCE = 20V, IC = 10 mA,
MHz
f = 100 MHz
VCE = 5V, IC = 100µA,
dB
RS = 1KΩ, f = 1kHz
200
150
100
50
RθJA = 417 o C/W
125 150
25
50
75
100
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Maximum Power Dissipation vs.
Ambient Temperature
DS30824 Rev. 4 - 2
T A = 125°C
300
250
TA = 85°C
200
150
TA = 25°C
100
T A = -55°C
50
0
0
VC E = 5V
0
175
1
2 of 4
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10
100
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical hFE vs. IC
1,000
BC847BLD
© Diodes Incorporated
0.6
0.2
Ib = 3mA
Ib = 3.5mA
Ib = 4mA
VCE(SAT), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.16
Ib = 4.5mA
0.14 I = 2.5mA
b
0.12
0.1
0.08
0.06
0.04
Ib = 1mA
Ib 1.5mA
0.02
Ib = 0.5mA
0.5
0.4
0.3
TA = 150°C
TA = 125°C
0.2
TA = 85°C
0.1
TA = 25°C
Ib = 2mA
0
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VCE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 3 Typical IC vs. VCE
VCE = 1V
VBE, BASE EMITTER VOLTAGE (V)
TA = -55°C
0
0.1
1
100
10
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical VCE(SAT) vs. IC
1,000
Ic/Ib=10
VBE(SAT), BASE EMITTER
SATURATION VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Ic/Ib=10
Ib = 5mA
0.18
TA = 25°C
T A = -55°C
TA = 150°C
TA = 25°C
TA = -55°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 85°C
T A = 125°C
0
0.1
0
0.1
1
100
10
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical VBE vs. IC
Ordering Information
1,000
5.
1,000
(Note 5)
Packaging
SOT-23
Device
BC847BLD-7
Notes:
1
100
10
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical VBE(SAT) vs. IC
Shipping
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
KLD
Date Code Key
Year
Code
Month
Code
DS30824 Rev. 4 - 2
2006
T
Jan
1
2007
U
Feb
2
2008
V
Mar
3
YM
Marking Information
2009
W
Apr
4
May
5
KLD = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
2010
X
Jun
6
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2011
Y
Jul
7
2012
Z
Aug
8
2013
A
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
BC847BLD
© Diodes Incorporated
Mechanical Details
A
SOT-23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
8°
0°
α
All Dimensions in mm
B C
H
K
M
K1
D
F
J
L
G
Suggested Pad Layout
Y
Z
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
C
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30824 Rev. 4 - 2
4 of 4
www.diodes.com
BC847BLD
© Diodes Incorporated