VISHAY VLMW32V2AB-5K8L-18

VLMW32..
Vishay Semiconductors
Power SMD LED PLCC-4
FEATURES
• High efficient INGaN technology
• Angle of half intensity ϕ = ± 60°
• Available in 8 mm tape
e3
• Luminous intensity, color and forward
voltage categorized per packing unit
• Luminous intensity ratio per packing unit
IVmax/IVmin ≤ 1.6
• ESD-withstand voltage:
up to 1 kV according to JESD22-A114-B
• Lead (Pb)-free device
• Preconditioning: according to Jedec Level 2a
• Compatible with IR-Reflow, vapor phase and wave
soldering processes according to CECC 00802 and
J-STD-020C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Automotive qualified AEC-Q101
19210_1
DESCRIPTION
The VLMW32.. white LED is an advanced product in
terms of heat dissipation.
The leadframe profile of this PLCC-4 SMD package is
optimized to reduce the thermal resistance.
This allows higher drive current and doubles the light
output compared to Vishay’s high intensity SMD LED
in PLCC-2 standard package.
APPLICATIONS
• Camera flash light
• Signal and symbol luminaire
• Marker lights
• Interior and exterior automotive lighting
(brake lights, turn lights, backlighting, side markers)
• Indicator lighting
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: PLCC-4
• Product series: SMD Power
• Angle of half intensity: ± 60°
PARTS TABLE
PART
COLOR, LUMINOUS INTENSITY
TECHNOLOGY WAVELENGTH
VLMW32T2V1-5K8L-08
White, IV = (355 to 900) mcd
InGaN/TAG on SiC
VLMW32T2V1-5K8L-18
White, IV = (355 to 900) mcd
InGaN/TAG on SiC
VLMW32U2V2-5K8L-08
White, IV = (560 to 1120) mcd
InGaN/TAG on SiC
VLMW32U2V2-5K8L-18
White, IV = (560 to 1120) mcd
InGaN/TAG on SiC
VLMW32T1V2-5K8L-08
White, IV = (280 to 1120) mcd
InGaN/TAG on SiC
VLMW32T1V2-5K8L-18
White, IV = (280 to 1120) mcd
InGaN/TAG on SiC
VLMW32U2AA-5K8L-08
White, IV = (560 to 1400) mcd
InGaN/TAG on SiC
VLMW32U2AA-5K8L-18
White, IV = (560 to 1400) mcd
InGaN/TAG on SiC
VLMW32V2AB-5K8L-08
White, IV = (900 to 1800) mcd
InGaN/TAG on SiC
VLMW32V2AB-5K8L-18
White, IV = (900 to 1800) mcd
InGaN/TAG on SiC
Document Number 81619
Rev. 1.1, 20-Jul-07
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1
VLMW32..
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) VLMW32..
PARAMETER
TEST CONDITION
SYMBOL
VALUE
VR
5
V
Tamb ≤ 65 °C
IF
30
mA
tp ≤ 10 µs
IFSM
0.1
A
Power dissipation
PV
127
mW
Junction temperature
Reverse voltage2)
DC Forward current
Surge forward current
UNIT
Tj
100
°C
Operating temperature
range
Tamb
- 40 to + 100
°C
Storage temperature
range
Tstg
- 40 to + 100
°C
t ≤ 5s
Tsd
260
°C
mounted on PC board
(pad design see page 6)
RthJA
270
K/W
Soldering temperature
Thermal resistance
junction/ambient
Note:
1) T
amb = 25 °C, unless otherwise specified
2)
Driving the LED in reverse direction is suitable for a short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMW32.., WHITE
PARAMETER
Luminous intensity
Luminous Flux
TEST CONDITION
IF = 30 mA
IF = 30 mA
Chromaticity coordinate x, y
acc. to CIE 1931
IF = 30 mA
Angle of half intensity
Forward voltage
PART
SYMBOL
MIN
MAX
UNIT
VLMW32T2V1-5K8L
IV
355
TYP.
900
mcd
VLMW32U2V2-5K8L
IV
560
1120
mcd
VLMW32T1V2-5K8L
IV
280
1120
mcd
VLMW32U2AA-5K8L
IV
560
1400
mcd
VLMW32V2AB-5K8L
IV
900
1800
mcd
mlm
VLMW32T2V1-5K8L
φV
1100
2800
VLMW32U2V2-5K8L
φV
1700
3500
mlm
VLMW32T1V2-5K8L
φV
860
3500
mlm
VLMW32U2AA-5K8L
φV
1736
4340
mlm
VLMW32V2AB-5K8L
φV
2790
5580
mlm
x
y
0.33
0.33
IF = 30 mA
ϕ
± 60
IF = 30 mA
VF
3.7
deg
4.2
V
Reverse voltage
IR = 10 µA
VR
Temperature coefficient of VF
IF = 20 mA
TCVF
-4
mV/K
Temperature coefficient of IV
IF = 20 mA
TCIV
- 0.5
%/K
5
V
Note:
1)
Tamb = 25 °C, unless otherwise specified
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Document Number 81619
Rev. 1.1, 20-Jul-07
VLMW32..
Vishay Semiconductors
LUMINOUS INTENSITY CLASSIFICATION
GROUP
LIGHT INTENSITY (MCD)
CROSSING TABLE
VISHAY
OSRAM
NICHIA
STANDARD
MIN
MAX
VLMW32T2V1
LWE67C-T2V1
NSCW021T
T1
280
355
VLMW32U2V2
LWE67C-U2V2
NSCW021T
T2
355
450
VLMW32T1V2
LWE67C-T1V2
NSCW021T
U1
450
560
VLMW32U2AA
LWE6SC-U2AA
NSCW021T
U2
560
710
VLMW32V2AB
LWE6SC-V2AB
NSCW021T
V1
710
900
V2
900
1120
AA
1120
1400
AB
1400
1800
Note:
Luminous intensity is tested at a current pulse duration of 25 ms and
an accuracy of ± 11 %.
The above type numbers represent the order groups which include
only a few brightness groups. Only one group will be shipped on
each reel (there will be no mixing of two groups on each reel).
In order to ensure availability, single brightness groups will not be
orderable.
In a similar manner for colors where wavelength groups are
measured and binned, single wavelength groups will be shipped on
any one reel.
In order to ensure availability, single wavelength groups will not be
orderable.
CHROMATICITY COORDINATED GROUPS FOR WHITE SMD LED
5L
5K
6L
6K
X
Y
X
Y
0.291
0.268
0.330
0.330
0.285
0.279
0.330
0.347
0.307
0.312
0.347
0.371
0.310
0.297
0.345
0.352
0.296
0.259
0.330
0.310
0.291
0.268
0.330
0.330
0.310
0.297
0.338
0.342
0.313
0.284
0.352
0.344
0.310
0.297
0.345
0.352
0.307
0.312
0.347
0.371
0.330
0.347
0.367
0.401
0.330
0.330
0.364
0.380
0.313
0.284
0.352
0.344
0.310
0.297
0.338
0.342
0.330
0.330
0.364
0.380
0.330
0.310
0.360
0.357
7L
7K
8L
8K
Note:
Chromaticity coordinate groups are tested at a current pulse direction of 25 ms and a tolerance of ± 0.01.
Document Number 81619
Rev. 1.1, 20-Jul-07
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3
VLMW32..
Vishay Semiconductors
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
100
IV rel - Relative Luminous Intensity
40
I F - Forward Current (mA)
35
30
25
20
15
10
5
90
80
70
60
50
40
30
20
10
0
400 450 500 550 600 650 700 750 800
0
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
19034_1
Figure 1. Forward Current vs. Ambient Temperature
Figure 4. Relative Intensity vs. Wavelength
2.0
I Vrel - Relative Luminous Intensity
I Vrel - Relative Luminous Intensity
10
1
0.1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
1
10
I F - Forward Current (mA)
16194
100
10
0.345
white
0.340
X
0.335
0.330
Y
0.325
0.320
0.315
2.5
3.0
3.5
4.0
4.5
0
5.0
V F - Forward Voltage (V)
Figure 3. Forward Current vs. Forward Voltage
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30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
f - Chromaticitycoordinante shift (x,y)
I F - Forward Current (mA)
100
1
2.0
0 10 20
16197
Figure 2. Relative Luminous Intensity vs. Forward Current
19035
λ - Wavelength (nm)
16196
16198
10
20
30
40
50
60
IF - Forward Current (mA)
Figure 6. Chromaticity Coordinate Shift vs. Forward Current
Document Number 81619
Rev. 1.1, 20-Jul-07
VLMW32..
Vishay Semiconductors
3.95
0.400
New color grouping white
8L
3.85
8K
0.350
3.80
7L
7K
3.75
Y-par
VF - Forward Voltage (V)
3.90
3.70
3.65
6L
6K
0.300
5L
5K
3.60
0.250
3.55
3.50
3.45
0 10 20
0.200
0.250 0.270 0.290 0.310 0.330 0.350 0.370
30 40 50 60 70 80 90 100
T amb - Ambient Temperature (°C)
16199
X-par
19784_3
Figure 9. White Grouping SMD
Figure 7. Forward Voltage vs. Ambient Temperature
10°
20°
Δ VF - Change of Forward Voltage (mV)
0°
IV rel - Relative Luminous Intensity
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
95 10319
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
600
500
30 mA
400
20 mA
300
200
100
10 mA
0
- 100
- 200
- 300
- 50
- 25
0
25
50
75
100
Tamb - Ambient Temperature (°C)
19036
Figure 10. Change of Forward Voltage vs. Ambient Temperature
Figure 8. Rel. Luminous Intensity vs. Angular Displacement
TAPING Dimensions in millimeters
Anode
3.5
3.1
Cathode
2.2
2.0
4.0
3.6
5.75
5.25
3.6
3.4
Cathode
8.3
7.7
1.85
1.65
1.6
1.4
4.1
3.9
4.1
3.9
0.25
2.05
1.95
18596
Document Number 81619
Rev. 1.1, 20-Jul-07
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5
VLMW32..
Vishay Semiconductors
RECOMMENDED PAD DESIGN Dimensions in millimeters
(Wave-Soldering), RthJA = 270 K/W
16260
RECOMMENDED PAD DESIGN Dimensions in millimeters
(Reflow-Soldering), RthJA = 270 K/W
16261
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Document Number 81619
Rev. 1.1, 20-Jul-07
VLMW32..
Vishay Semiconductors
OPTIONAL PAD DESIGN Dimensions in millimeters
(Wave-Soldering), RthJA = 290 K/W
16262
OPTIONAL PAD DESIGN Dimensions in millimeters
(Reflow-Soldering), RthJA = 290 K/W
16263
Document Number 81619
Rev. 1.1, 20-Jul-07
www.vishay.com
7
VLMW32..
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Mounting Pad Layout
1.2
4
2.6 (2.8)
area covered with
solder resist
4
1.6 (1.9)
20541
METHOD OF TAPING/POLARITY AND TAPE AND
SMD LED (VLM.3 - SERIES)
Vishay’s LEDs in SMD packages are available in an
antistatic 8 mm blister tape (in accordance with
DIN IEC 40 (CO) 564) for automatic component
insertion. The blister tape is a plastic strip with
impressed component cavities, covered by a top tape.
REEL
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS08
(= 1500 PCS.)
4.5
3.5
2.5
1.5
Adhesive Tape
10.0
9.0
120°
13.00
12.75
63.5
60.5
Identification
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
Blister Tape
14.4 max.
180
178
94 8665
Figure 12. Reel dimensions - GS08
Component Cavity
94 8670
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS18
(= 8000 PCS.) PREFERED
TAPING OF VLM.3...
2.2
2.0
3.5
3.1
10.4
8.4
120°
5.75
5.25
3.6
3.4
4.5
3.5
4.0
3.6
2.5
1.5
8.3
7.7
13.00
12.75
62.5
60.0
Identification
1.85
1.65
1.6
1.4
4.1
3.9
4.1
3.9
0.25
2.05
1.95
94 8668
Figure 11. Tape dimensions in mm for PLCC-x
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Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
321
329
14.4 max.
18857
Figure 13. Reel dimensions - GS18
Document Number 81619
Rev. 1.1, 20-Jul-07
VLMW32..
Vishay Semiconductors
SOLDERING PROFILE
BARCODE-PRODUCT-LABEL
EXAMPLE:
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
300
106
max. 260 °C
245 °C
255
255°C°C
240 °C
217 °C
250
A
H
200
T[°C]
max. 30 s
150
37
max. 100 s
max. 120 s
100
max. Ramp Down 6 °C/s
max. Ramp Up 3 °C/s
50
B
C
D
E
F
G
19795
0
0
50
100
150
250
200
300
t [s]
19470-3
max. 2 cycles allowed
Figure 14. Vishay Lead (Pb)-free Reflow Soldering Profile
(acc. to J-STD-020C)
TTW Soldering
300
948626-1
(acc. to CECC00802)
5s
Lead Temperature
Temperature (°C)
250
200
second
wave
235 °C...260 °C
first wave
full line: typical
dotted line: process limits
ca. 2 K/s
ca. 200 K/s
150
A) Type of component
B) Manufacturing plant
C) SEL - Selection Code (Bin):
e.g.: V1 = Code for Luminous Intensity Group
5L = Code for Chrom. Coordinate Group
D) Date Code year/week
E) Day Code (e. g. 1: Monday)
F) Batch No.
G) Total quantity
H) Company code
100 °C...130 °C
100
ca. 5 K/s
2 K/s
50
forced cooling
0
0
50
100
150
200
250
Time (s)
Figure 15. Double wave soldering of opto devices (all packages)
Document Number 81619
Rev. 1.1, 20-Jul-07
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9
VLMW32..
Vishay Semiconductors
DRY PACKING
The reel is packed in an anti-humidity bag to protect
the devices from absorbing moisture during
transportation and storage.
L E V E L
CAUTION
This bag contains
MOISTURE –SENSITIVE DEVICES
2a
1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH)
2. After this bag is opened devices that will be subjected to infrared reflow,
vapor-phase reflow, or equivalent processing (peak package body temp.
260°C) must be:
a) Mounted within 672 hours at factory condition of < 30°C/60%RH or
b) Stored at <10% RH.
Aluminum bag
Label
3. Devices require baking before mounting if:
a)
Humidity Indicator Card is >10% when read at 23°C + 5°C or
b)
2a or 2b is not met.
4. If baking is required, devices may be baked for:
192 hours at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen)
or
o
or
96 hours at 60±5 Cand <5%RH
For all device containers
24 hours at 100±5°C
Not suitable for reels or tubes
Reel
15973
Bag Seal Date: ______________________________
(If blank, see bar code label)
Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
19786
Example of JESD22-A112 Level 2a label
FINAL PACKING
The sealed reel is packed into a cardboard box. A
secondary cardboard box is used for shipping
purposes.
ESD PRECAUTION
Proper storage and handling procedures should be
followed to prevent ESD damage to the devices
especially when they are removed from the Antistatic
Shielding Bag. Electro-Static Sensitive Devices
warning labels are on the packaging.
RECOMMENDED METHOD OF STORAGE
Dry box storage is recommended as soon as the
aluminum bag has been opened to prevent moisture
absorption. The following conditions should be
observed, if dry boxes are not available:
• Storage temperature 10 °C to 30 °C
• Storage humidity ≤ 60 % RH max.
After more than 672 hours under these conditions
moisture content will be too high for reflow soldering.
In case of moisture absorption, the devices will recover
to the former condition by drying under the following
condition:
192 hours at 40 °C + 5 °C/- 0 °C and < 5 % RH
(dry air/nitrogen) or
96 hours at 60 °C + 5 °C and < 5 % RH for all device
containers or
24 hours at 100 °C + 5 °C not suitable for reel or tubes.
An EIA JEDEC Standard JESD22-A112 Level 2a label
is included on all dry bags.
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Document Number 81619
Rev. 1.1, 20-Jul-07
VLMW32..
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81619
Rev. 1.1, 20-Jul-07
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11
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1