VISHAY VLMV3100-GS18

VLMV3100
Vishay Semiconductors
Bicolor SMD LED PLCC-3
FEATURES
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19140_1
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DESCRIPTION
These devices have been designed to meet the
increasing demand for surface mounting technology.
The package of the VLMV3100 is the PLCC-3.
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
This SMD device consists of a red and green chip. So
it is possible to choose the color in one device.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-3
• Product series: bicolor
• Angle of half intensity: ± 60°
SMD LED with exceptional brightness
Multicolored
e3
Luminous intensity categorized
Compatible with automatic placement
equipment
EIA and ICE standard package
Compatible with IR reflow, vapor phase and wave
soldering processes according to CECC 00802 and
J-STD-020-C
Available in 8 mm tape
Low profile package
Non-diffused lens: excellent for coupling to light
pipes and backlighting
Low power consumption
Luminous intensity ratio in one packaging unit
IVmax/IVmin ≤ 2.0
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Lead (Pb)-free device
Preconditioning: acc. to JEDEC level 2a
ESD-withstand voltage: up to 2 kV according to
JESD22-A114-B
APPLICATIONS
• Automotive: backlighting in dashboards and
switches
• Telecommunication: indicator and backlighting in
telephone and fax
• Indicator and backlight for audio and video
equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
PARTS TABLE
PART
COLOR, LUMINOUS INTENSITY
TECHNOLOGY
VLMV3100-GS08
Green/red, IV > 2.8 mcd
GaP on GaP/GaAsP on GaP
VLMV3100-GS18
Green/red, IV > 2.8 mcd
GaP on GaP/GaAsP on GaP
Document Number 81347
Rev. 1.1, 13-Sep-07
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1
VLMV3100
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) VLMV3100
PARAMETER
TEST CONDITION
SYMBOL
IR = 10 μA
VR
6
V
Tamb ≤ 60 °C
IF
30
mA
tp ≤ 10 µs
IFSM
0.5
A
Power dissipation per diode
PV
100
mW
Junction temperature
Tj
100
°C
Tamb
- 40 to + 100
°C
Tstg
- 40 to + 100
°C
RthJA
400
K/W
Reverse voltage per
diode2)
DC Forward current per diode
Surge forward current per diode
Operating temperature range
Storage temperature range
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 16 mm2)
VALUE
UNIT
Note:
1)
Tamb = 25 °C unless otherwise specified
2)
Driving the LED in reverse direction is suitable for a short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMV3100, RED
PARAMETER
TEST CONDITION
SYMBOL
MIN
TYP.
Luminous intensity
IF = 10 mA
IV
2.8
6
Dominant wavelength
IF = 10 mA
λd
612
Peak wavelength
IF = 10 mA
λp
635
2)
Angle of half intensity
IF = 10 mA
ϕ
± 60
IF = 20 mA
VF
2.4
Reverse current per diode
VR = 6 V
IR
VR = 0, f = 1 MHz
Cj
UNIT
mcd
625
Forward voltage per diode
Junction capacitance per diode
MAX
nm
nm
deg
3
V
10
µA
15
pF
Note:
1)
Tamb = 25 °C unless otherwise specified
2) in one packing unit I
Vmax/IVmin ≤ 0.5
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMV3100, GREEN
TEST CONDITION
SYMBOL
MIN
TYP.
Luminous intensity2)
PARAMETER
IF = 10 mA
IV
2.8
6
Dominant wavelength
IF = 10 mA
λd
562
Peak wavelength
IF = 10 mA
λp
565
nm
deg
IF = 10 mA
ϕ
± 60
Forward voltage per diode
IF = 20 mA
VF
2.4
Reverse current per diode
VR = 6 V
IR
VR = 0, f = 1 MHz
Cj
15
UNIT
mcd
575
Angle of half intensity
Junction capacitance per diode
MAX
nm
3
V
10
µA
pF
Note:
Tamb = 25 °C unless otherwise specified
2)
in one Packing Unit IVmax/IVmin ≤ 0.5
1)
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Document Number 81347
Rev. 1.1, 13-Sep-07
VLMV3100
Vishay Semiconductors
LUMINOUS INTENSITY CLASSIFICATION
COLOR CLASSIFICATION
GROUP
GREEN
GROUP
DOM. WAVELENGTH [NM]
STANDARD
MIN.
MAX.
3
562
565
4
564
567
5
566
569
6
568
571
7
570
573
8
572
575
LIGHT INTENSITY [MCD]
OPTIONAL
MIN
MAX
1
2
1
2
1
2
1
2
1
2
2.8
3.55
4.5
5.6
7.1
9.0
11.2
14.0
18.0
22.4
3.55
4.5
5.6
7.1
9.0
11.2
14.0
18.0
22.4
28.0
H
J
K
L
Note:
Wavelengths are tested at a current pulse duration of 25 ms and an
accuracy of ± 1 nm.
M
Note:
Luminous intensity is tested at a current pulse duration of 25 ms and
an accuracy of ± 11 %.
The above Type Numbers represent the order groups which include
only a few brightness groups. Only one group will be shipped on
each reel (there will be no mixing of two groups on each reel).
In order to ensure availability, single brightness groups will not be
orderable.
In a similar manner for colors where wavelength groups are
measured and binned, single wavelength groups will be shipped on
any one reel.
In order to ensure availability, single wavelength groups will not be
orderable.
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
10000
Tamb < 60 °C
t p /T = 0.005
50
I F - Forward Current (mA)
IF - Forward Current (mA)
60
40
30
20
10
0
0
95 10905
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Figure 1. Forward Current vs. Ambient Temperature
Document Number 81347
Rev. 1.1, 13-Sep-07
0.01
1000
0.02
0.05
100
0.2
0.5
DC
10
1
0.01
95 9985
0.1
0.1
1
10
100
t p - Pulse Length (ms)
Figure 2. Pulse Forward Current vs. Pulse Duration
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VLMV3100
Vishay Semiconductors
10°
20°
100
30°
red
40°
1.0
0.9
50°
0.8
60°
70°
0.7
I F - Forward Current (mA)
IV rel - Relative Luminous Intensity
0°
10
1
80°
0.1
0.6
95 10319
0.4
0.2
0
0.2
0.4
0
0.6
1
95 9989
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
2
3
4
V F - Forward Voltage (V)
5
Figure 6. Forward Current vs. Forward Voltage
100
red
green
1.0
I F - Forward Current (mA)
I V re l - Relative Luminous Intensity
1.2
0.8
0.6
0.4
0.2
0
590
610
630
650
670
0
I v rel - Relative Luminous Intensity
IVrel - Relative Luminous Intensity
green
1.0
0.8
0.6
0.4
0.2
3
4
5
10
red
1
0.1
0.01
540
560
580
600
620
λ - Wavelength (nm)
Figure 5. Relative Intensity vs. Wavelength
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2
V F - Forward Voltage (V)
Figure 7. Forward Current vs. Forward Voltage
1.2
95 10038
1
95 9986
Figure 4. Relative Intensity vs. Wavelength
0
520
1
0.1
690
λ - Wavelength (nm)
95 10040
10
1
95 9995
10
100
I F - Forward Current (mA)
Figure 8. Relative Luminous Intensity vs. Forward Current
Document Number 81347
Rev. 1.1, 13-Sep-07
VLMV3100
Vishay Semiconductors
2.4
I v rel - Relative Luminous Intensity
10
IV rel - Relative Luminous Intensity
green
1
0.1
red
2.0
1.6
1.2
0.8
0.4
0
0.01
1
10
100
I F - Forward Current (mA)
95 9996
95 10321
Figure 9. Relative Luminous Intensity vs. Forward Current
20
0.5
50
0.2
100
0.1
200
0.05
500 IF (mA)
0.02 tP/T
Figure 12. Rel. Luminous Intensity vs. Forw. Current/Duty Cycle
2.4
I v rel - Specific Luminous Intensity
2.0
I v rel - Relative Luminous Intensity
10
1
red
1.6
1.2
0.8
0.4
green
2.0
1.6
1.2
0.8
0.4
0
0
0
95 9993
20
40
60
80
Tamb - Ambient Temperature (°C)
100
95 10263
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
10
20
50
100
200
500
IF (mA)
1
0.5
0.2
0.1
0.05
0.02
t p /T
Figure 13. Specific Luminous Intensity vs. Forward Current
I v rel - Relative Luminous Intensity
2.0
green
1.6
1.2
0.8
0.4
0
0
95 10320
20
40
60
80
100
T amb - Ambient Temperature (°C)
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 81347
Rev. 1.1, 13-Sep-07
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5
VLMV3100
Vishay Semiconductors
PACKAGE DIMENSIONS
Mounting Pad Layout
area covered with
solder resist
4
0.5
2.6 (2.8)
1.2
4
1.6 (1.9)
Dimensions: IR and Vaporphase
(Wave Soldering)
METHOD OF TAPING/POLARITY AND TAPE
AND REEL
TAPING OF VLM.3...
2.2
2.0
3.5
3.1
SMD LED (VLM.3 - SERIES)
Vishay’s LEDs in SMD packages are available in an
antistatic 8 mm blister tape (in accordance with
DIN IEC 40 (CO) 564) for automatic component
insertion. The blister tape is a plastic strip with
impressed component cavities, covered by a top tape.
5.75
5.25
3.6
3.4
4.0
3.6
8.3
7.7
1.85
1.65
1.6
1.4
4.1
3.9
4.1
3.9
0.25
2.05
1.95
Adhesive Tape
94 8668
Figure 14. Tape Dimensions in mm for PLCC-2
Blister Tape
Component Cavity
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94 8670
Document Number 81347
Rev. 1.1, 13-Sep-07
VLMV3100
Vishay Semiconductors
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS08
(= 1500 PCS.)
TTW Soldering
300
948626-1
(acc. to CECC00802)
5s
Lead Temperature
250
4.5
3.5
Temperature (°C)
10.0
9.0
120°
13.00
12.75
2.5
1.5
63.5
60.5
Identification
200
second
wave
235 °C...260 °C
first wave
full line: typical
dotted line: process limits
ca. 2 K/s
ca. 200 K/s
150
100 °C...130 °C
100
ca. 5 K/s
2 K/s
50
forced cooling
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
0
0
100
50
150
250
200
Time (s)
Figure 18. Double Wave Soldering of Opto Devices (all Packages)
14.4 max.
180
178
94 8665
BAR CODE PRODUCT LABEL
EXAMPLE:
Figure 15. Reel Dimensions - GS08
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS18
(= 8000 PCS.) PREFERRED
106
A
H
VISHAY
10.4
8.4
120°
37
4.5
3.5
13.00
12.75
2.5
1.5
B
62.5
60.0
Identification
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
D
E
F
G
20164
A) Type of component
B) Manufacturing plant
C) SEL - selection code (bin):
e.g.: H2 = code for luminous intensity group
3 = code for color group
D) Date code year/week
E) Day code (e.g. 4: Thursday)
F) Batch no.
G) Total quantity
H) Company code
14.4 max.
321
329
C
18857
Figure 16. Reel Dimensions - GS18
SOLDERING PROFILE
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
300
Temperature (°C)
DRY PACKING
The reel is packed in an anti-humidity bag to protect
the devices from absorbing moisture during
transportation and storage.
max. 260 °C
245 °C
255
255°C°C
250
240 °C
217 °C
200
max. 30 s
150
max. 100 sec
max. 120 sec
Aluminum bag
100
max. Ramp Down 6 °C/sec
max. Ramp Up 3 °C/sec
50
Label
0
0
50
100
19470-2
150
200
250
300
Time (s)
max. 2 cycles allowed
Figure 17. Vishay Lead (Pb)-free Reflow Soldering Profile
(acc. to J-STD-020C)
Document Number 81347
Rev. 1.1, 13-Sep-07
Reel
15973
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VLMV3100
Vishay Semiconductors
FINAL PACKING
The sealed reel is packed into a cardboard box. A
secondary cardboard box is used for shipping
purposes.
RECOMMENDED METHOD OF STORAGE
Dry box storage is recommended as soon as the
aluminium bag has been opened to prevent moisture
absorption. The following conditions should be
observed, if dry boxes are not available:
• Storage temperature 10 °C to 30 °C
• Storage humidity ≤ 60 % RH max.
After more than 672 h under these conditions moisture
content will be too high for reflow soldering.
In case of moisture absorption, the devices will recover
to the former condition by drying under the following
condition:
192 h at 40 °C + 5 °C/ - 0 °C and < 5 % RH (dry air/
nitrogen) or
96 h at 60 °C + 5 °C and < 5 % RH for all device
containers or
24 h at 100 °C + 5 °C not suitable for reel or tubes.
An EIA JEDEC standard JESD22-A112 level 2a label
is included on all dry bags.
ESD PRECAUTION
Proper storage and handling procedures should be
followed to prevent ESD damage to the devices
especially when they are removed from the antistatic
shielding bag. Electro-static sensitive devices warning
labels are on the packaging.
VISHAY SEMICONDUCTORS STANDARD
BAR CODE LABELS
The Vishay Semiconductors standard bar code labels
are printed at final packing areas. The labels are on
each packing unit and contain Vishay Semiconductors
specific data.
L E V E L
CAUTION
This bag contains
MOISTURE –SENSITIVE DEVICES
2a
1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH)
2. After this bag is opened devices that will be subjected to infrared reflow,
vapor-phase reflow, or equivalent processing (peak package body temp.
260°C) must be:
a) Mounted within 672 hours at factory condition of < 30°C/60%RH or
b) Stored at <10% RH.
3. Devices require baking before mounting if:
a)
Humidity Indicator Card is >10% when read at 23°C + 5°C or
b)
2a or 2b is not met.
4. If baking is required, devices may be baked for:
192 hours at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen)
or
o
or
96 hours at 60±5 Cand <5%RH
For all device containers
24 hours at 100±5°C
Not suitable for reels or tubes
Bag Seal Date: ______________________________
(If blank, see bar code label)
Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
19786
Example of JESD22-A112 level 2a label
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Document Number 81347
Rev. 1.1, 13-Sep-07
VLMV3100
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,
damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81347
Rev. 1.1, 13-Sep-07
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9
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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