DIODES DDC144NS

DDC144NS
Lead-free Green
100mA PRE-BIASED TRANSISTOR ARRAY USING
DUAL NPN TRANSISTOR
NEW PRODUCT
General Description
·
DDC144NS features discrete dual NPN transistors that can
support continuous maximum current up to 100 mA. It is
suited for applications where the load needs to be turned on
and off using circuits like micro-controllers, comparators,
etc., particularly at a point of load. The component devices
can be used as a part of a circuit or as a stand alone discrete
device.
6
5
4
1
2
3
Features
·
·
·
·
Fig 1: SOT-363
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
CQ1
BQ1
CQ2
6
5
4
Mechanical Data
·
·
Case: SOT-363
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
·
·
Marking & Type Code Information: See Page 4
R1
47k
DDC144E_DIE
Q1
Q2
DDC144E_DIE
R2
Case Material: Molded Plastic. "Green Molding" Compound.
UL Flammability Classification Rating 94V-0
R4
47k
47k
R3
Terminal Connections: See Figure 2
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
47k
1
2
3
EQ1
EQ2
BQ2
Fig. 2: Schematic and Pin Configuration
Ordering Information: See Page 4
Weight: 0.016 grams (approximate)
Sub-Component P/N
Reference
Device Type
R1(NOM)
R2(NOM)
Figure
DDC144E_DIE
Q1, Q2
NPN
47K
47K
2
Maximum Ratings, Total Device
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Pd
200
mW
RqJA
625
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Collector Current
IC(max)
100
mA
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Unit
Maximum Ratings: @ TA = 25°C unless otherwise specified
Sub-Component Device - Pre-Biased NPN Transistor
Symbol
Value
Unit
Supply Voltage
Characteristic
Vcc
50
V
Input Voltage
Vin
-10 to +40
V
Output Current
Io
100
mA
Notes:
1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 5 or go to Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30747 Rev. 4 - 2
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DDC144NS
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor (R1) Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product
Typ
Max
0.5
1.1
¾
V
Vcc = 5V, IO = 100uA
¾
1.5
3
V
VO = 0.3V, IO = 2mA
VO(on)
¾
0.1
0.3
V
IO/II = 10mA/0.5mA
II
¾
¾
0.18
mA
VI = 5V
VI(off)
VI(on)
Min
Unit
Test Condition
IO(off)
¾
¾
0.5
uA
Vcc = 50V, VI = 0V
GI
100
¾
¾
¾
VO = 5V, IO = 5mA
D R1
-30
¾
+30
%
¾
R2/R1
-20
¾
+20
%
¾
fT
¾
250
¾
MHz
VCE = 10V, IE = 5mA, f = 100 MHz
Typical Characteristics of NPN Transistor
(@Tamb = 25°C unless otherwise specified)
250
0.08
Ib = 0.45mA
200
IC, COLLECTOR CURRENT (A)
PD, POWER DISSIPATION (mW)
0.07
150
100
50
Ib = 0.4mA
0.06
Ib = 0.35mA
Ib = 0.3mA
0.05
Ib = 0.25mA
0.04
0.03
Ib = 0.1mA
0.02
Ib = 0.15mA
0.01
Ib = 0.2mA
0
Ib = 0.05mA
0
-50
0
50
100
150
0
TA, AMBIENT TEMPERATURE (° C)
Fig. 3 Derating Curve
450
400
VCE = 5V
o
hFE, DC CURRENT GAIN
TA = 125 C
o
300
TA = 85 C
250
o
TA = 25 C
200
150
o
TA = -55 C
100
0.4
0.6
0.8
450
o
350
0.2
1
1.2
1.4
1.6
1.8
2
VCE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 4 VCE vs IC
TA = 150 C
400
hFE, DC CURRENT GAIN
NEW PRODUCT
Electrical Characteristics:
Pre-Biased NPN Transistor
o
TA = 150 C
VCE = 10V
o
TA = 125 C
350
o
300
TA = 85 C
250
o
TA = 25 C
200
150
o
TA = -55 C
100
50
50
0
0
0.1
1
10
100
1000
0.1
IC COLLECTOR CURRENT (mA)
Fig. 5 DC Current Gain
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1000
100
10
1
IC, COLLECTOR CURRENT (mA)
Fig. 6 DC Current Gain
DDC144NS
100
VCE(SAT), COLLECTOR VOLTAGE (V)
Ic/Ib=10
VCE(SAT), COLLECTOR VOLTAGE(V)
NEW PRODUCT
100
10
1
o
TA = 150 C
o
TA = 85 C
0.1
o
TA = 125 C
o
TA = -55 C
o
0.01
TA = 25 C
Ic/Ib=20
10
1
o
TA = 150 C
o
TA = 85 C
0.1
o
1
100
10
TA = -55 C
1000
0.1
1
IC, COLLECTOR CURRENT (mA)
Fig. 7 VCE(SAT) vs IC
100
1000
15
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE = 0.3V
22.5
VI(ON), INPUT VOLTAGE (V)
10
IC, COLLECTOR CURRENT (mA)
Fig. 8 VCE(SAT) vs IC
25
20
17.5
15
12.5
10
TA = 85°C
7.5
TA = 25°C
5
TA = -55°C
TA = 125°C
2.5
TA = 150°C
0
0.1
10
1
IC, OUTPUT CURRENT (mA)
Fig. 9 Input Voltage vs Output Current
13.5
10.5
9
7.5
6
TA = 85°C
4.5
TA = -55°C
3
TA = 25°C
TA = 125°C
1.5
0
100
TA = 150°C
0.1
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 10 VBE(ON) vs IC
100
30
27
VBE(SAT), BASE EMITTER VOLTAGE (V)
Ic/Ib=10
24
21
18
TA = 125°C
15
TA = 85°C
12
TA = 25°C
9
TA = 150°C
6
TA = -55°C
3
0
VCE = 5V
12
30
VBE(SAT), BASE EMITTER VOLTAGE (V)
TA = 25 C
o
0.01
0.1
o
TA = 125 C
27
Ic/Ib=10
24
21
TA = 25°C
18
TA = 150°C
15
TA = -55°C
12
TA = 125°C
TA = 85°C
9
6
3
0.1
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 11 VBE(SAT) vs IC
DS30747 Rev. 4 - 2
100
0
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0.1
10
1
IC, COLLECTOR CURRENT (mA)
Fig. 12 VBE(SAT) vs IC
100
DDC144NS
Notes:
(Note 4)
Device
Marking Code
Packaging
Shipping
DDC144NS-7
S20
SOT-363
3000/Tape & Reel
4. For Packaging Details, please see page 5 or go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
S20 = Product Type Marking Code,
YM = Date Code Marking
Y = Year, e.g., T = 2006
M = Month, e.g., 9 = September
YM
NEW PRODUCT
Ordering Information
S20
Fig. 13
Date Code Key
Year
2005
2006
2007
2008
2009
2010
2011
2012
Code
S
T
U
V
W
X
Y
Z
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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DDC144NS
NEW PRODUCT
Package Outline Dimensions
A
SOT-363
B C
H
K
M
J
D
F
L
Dim
Min
A
0.1
Max
0.3
B
1.15
1.35
C
2
2.2
D
0.65 Nominal
F
0.3
0.4
H
1.8
2.2
J
¾
0.1
K
0.9
1
L
0.25
0.4
M
0.1
0.25
0°
8°
a
All Dimensions in mm
Fig. 14
Suggested Pad Layout: (Based on IPC-SM-782)
E
Z
E
Figure 15 Dimensions
SOT-363*
Z
2.5
C
G
G
1.3
X
0.42
Y
0.6
C
1.9
E
0.65
Y
*Typical dimensions in mm
X
Fig. 15
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
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DDC144NS