MMDT4126 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • A Epitaxial Planar Die Construction Complementary NPN Type Available (MMDT4124) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5) • • • • • • • E1 B C B2 E2 C1 G H Mechanical Data • • SOT-363 B1 C2 K Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: K2B, See Page 3 Ordering & Date Code Information: See Page 3 Weight: 0.006 grams (approximate) Maximum Ratings M J D F L Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° All Dimensions in mm @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -25 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -4.0 V (Note 1) IC -200 mA (Note 1,2) Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C Collector Current – Continuous Power Dissipation Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30160 Rev. 9 - 2 1 of 4 www.diodes.com MMDT4126 © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -25 ⎯ V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -25 ⎯ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -4.0 ⎯ V IE = -10μA, IC = 0 Collector Cutoff Current ICBO ⎯ -50 nA VCB = -20V, IE = 0V Emitter Cutoff Current IEBO ⎯ -50 nA VEB = -3.0V, IC = 0V hFE 120 60 360 ⎯ ⎯ IC = -2.0mA, VCE = -1.0V IC = -50mA, VCE = -1.0V VCE(SAT) ⎯ -0.40 V IC = -50mA, IB = -5.0mA VBE(SAT) ⎯ -0.95 V IC = -50mA, IB = -5.0mA Output Capacitance Cobo ⎯ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Small Signal Current Gain hfe 120 480 ⎯ VCE = -1.0V, IC = -2.0mA, f = 1.0kHz Current Gain-Bandwidth Product fT 250 ⎯ MHz VCE = -20V, IC = -10mA, f = 100MHz Noise Figure NF ⎯ 4.0 dB VCE = -5.0V, IC = -100μA, RS = 1.0kΩ, f = 1.0kHz ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Notes: 4. Short duration pulse test used to minimize self-heating effect. 100 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 00 25 DS30160 Rev. 9 - 2 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature 10 1 0.1 200 2 of 4 www.diodes.com 1 100 10 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage MMDT4126 © Diodes Incorporated 10 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE hFE, DC CURRENT GAIN 1,000 100 10 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs. Collector Current IC IB = 10 1 0.1 0.01 1,000 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1.0 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current Ordering Information Notes: 5. 100 (Note 5) Device Packaging Shipping MMDT4126-7-F SOT-363 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K2B YM K2B = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM K2B Date Code Key Year Code 1998 J Month Code Jan 1 DS30160 Rev. 9 - 2 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P 2004 R May 5 Jun 6 3 of 4 www.diodes.com 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D MMDT4126 © Diodes Incorporated IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30160 Rev. 9 - 2 4 of 4 www.diodes.com MMDT4126 © Diodes Incorporated