DMN2005DLP4K DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) ESD Protected Gate Ultra Low Profile Package Case: DFN1310H4-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish ⎯ NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 • • • • • D1 DFN1310H4-6 S2 S1 G1 D2 TOP VIEW Internal Schematic ESD protected Maximum Ratings G2 @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit VDSS 20 V VGSS ±10 200 250 V Drain-Source Voltage Gate-Source Voltage Drain Current per element (Note 1) Thermal Characteristics Continuous Pulsed (Note 3) ID @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit PD 350 mW RθJA 357 °C/W TJ, TSTG -65 to +150 °C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics mA @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 100μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 10 μA VDS = 17V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±5 μA VGS = ±8V, VDS = 0V VGS(th) 0.53 ⎯ 0.9 V VDS = VGS, ID = 100μA RDS (ON) ⎯ ⎯ ⎯ ⎯ ⎯ 0.9 0.85 1.2 2.4 2.5 1.5 1.7 1.7 3.5 3.5 Ω VGS = 4V, ID = 10mA VGS = 2.7V, ID = 200mA VGS = 2.5V, ID = 10mA VGS = 1.8V, ID = 200mA VGS = 1.5V, ID = 1mA ⏐Yfs⏐ 40 ⎯ ⎯ mS OFF CHARACTERISTICS (per element) (Note 5) ON CHARACTERISTICS (per element) (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Notes: 1. 2. 3. 4. 5. VDS = 3V, ID = 10mA Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN2005DLP4K Document number: DS30801 Rev. 8 - 2 1 of 5 www.diodes.com October 2009 © Diodes Incorporated DMN2005DLP4K 2 1.8 ID, DRAIN CURRENT (A) 1.6 VGS = 2.0V TA = 25oC VGS =1.8V 1.4 1.2 1 VGS = 1.6V 0.8 VGS = 1.4V 0.6 0.4 VGS = 1.2V 0.2 0 0 VGS = 1.0V 2 1 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage 1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 0.6 0.8 0.6 0.4 0.2 0 -50 50 75 100 125 150 0 -25 25 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature 0.4 0.2 0 0.001 0.1 1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-State Resistance vs. Drain Current 5 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 0.8 0.6 0.4 0.2 0.1 0.001 Document number: DS30801 Rev. 8 - 2 3 2 1 0 0.01 0.1 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN2005DLP4K 4 0 2 3 4 5 6 1 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source, On-Resistance vs. Gate-Source Voltage 2 of 5 www.diodes.com October 2009 © Diodes Incorporated RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) DMN2005DLP4K VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage CT, CAPACITANCE (pF) |YfS|, FORWARD TRANSFER ADMITTANCE (S) TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source, On-Resistance vs. Ambient Temperature ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current Ordering Information (Note 6) Part Number DMN2005DLP4K-7 Notes: Case DFN1310H4-6 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DL DMN2005DLP4K Document number: DS30801 Rev. 8 - 2 DL = Product Type Marking Code 3 of 5 www.diodes.com October 2009 © Diodes Incorporated DMN2005DLP4K Package Outline Dimensions A DFN1310H4-6 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.02 A3 0.13 ⎯ ⎯ b 0.10 0.20 0.15 D 1.25 1.38 1.30 d 0.25 ⎯ ⎯ D2 0.30 0.50 0.40 E 0.95 1.075 1.00 e 0.35 ⎯ ⎯ E2 0.30 0.50 0.40 f 0.10 ⎯ ⎯ L 0.20 0.30 0.25 Z 0.05 ⎯ ⎯ All Dimensions in mm A1 A3 Z B D2 R0. 15 0 E2 E d L e d f z D Suggested Pad Layout G2 X2 Y2 G1 b Y1 G3 DMN2005DLP4K Document number: DS30801 Rev. 8 - 2 a X1 Dimensions G1 G2 G3 X1 X2 Y1 Y2 a b 4 of 5 www.diodes.com Value (in mm) 0.16 0.17 0.15 0.52 0.20 0.52 0.375 0.09 0.06 October 2009 © Diodes Incorporated DMN2005DLP4K IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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