DIODES DMN2005DLP4K

DMN2005DLP4K
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
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Low On-Resistance
Very Low Gate Threshold Voltage, 0.9V Max.
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
ESD Protected Gate
Ultra Low Profile Package
Case: DFN1310H4-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish ⎯ NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
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D1
DFN1310H4-6
S2
S1
G1
D2
TOP VIEW
Internal Schematic
ESD protected
Maximum Ratings
G2
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
VDSS
20
V
VGSS
±10
200
250
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current per element (Note 1)
Thermal Characteristics
Continuous
Pulsed (Note 3)
ID
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
PD
350
mW
RθJA
357
°C/W
TJ, TSTG
-65 to +150
°C
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
mA
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
20
⎯
⎯
V
VGS = 0V, ID = 100μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
10
μA
VDS = 17V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±5
μA
VGS = ±8V, VDS = 0V
VGS(th)
0.53
⎯
0.9
V
VDS = VGS, ID = 100μA
RDS (ON)
⎯
⎯
⎯
⎯
⎯
0.9
0.85
1.2
2.4
2.5
1.5
1.7
1.7
3.5
3.5
Ω
VGS = 4V, ID = 10mA
VGS = 2.7V, ID = 200mA
VGS = 2.5V, ID = 10mA
VGS = 1.8V, ID = 200mA
VGS = 1.5V, ID = 1mA
⏐Yfs⏐
40
⎯
⎯
mS
OFF CHARACTERISTICS (per element) (Note 5)
ON CHARACTERISTICS (per element) (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Notes:
1.
2.
3.
4.
5.
VDS = 3V, ID = 10mA
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMN2005DLP4K
Document number: DS30801 Rev. 8 - 2
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October 2009
© Diodes Incorporated
DMN2005DLP4K
2
1.8
ID, DRAIN CURRENT (A)
1.6
VGS = 2.0V
TA = 25oC
VGS =1.8V
1.4
1.2
1
VGS = 1.6V
0.8
VGS = 1.4V
0.6
0.4
VGS = 1.2V
0.2
0
0
VGS = 1.0V
2
1
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
4
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Reverse Drain Current vs. Source-Drain Voltage
1
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
0.6
0.8
0.6
0.4
0.2
0
-50
50
75 100 125 150
0
-25
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
0.4
0.2
0
0.001
0.1
1
0.01
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-State Resistance vs. Drain Current
5
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
0.8
0.6
0.4
0.2
0.1
0.001
Document number: DS30801 Rev. 8 - 2
3
2
1
0
0.01
0.1
1
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
DMN2005DLP4K
4
0
2
3
4
5
6
1
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source, On-Resistance vs. Gate-Source Voltage
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© Diodes Incorporated
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
DMN2005DLP4K
VSD, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Reverse Drain Current vs. Source-Drain Voltage
CT, CAPACITANCE (pF)
|YfS|, FORWARD TRANSFER ADMITTANCE (S)
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source, On-Resistance vs. Ambient Temperature
ID, DRAIN CURRENT (A)
Fig. 9 Forward Transfer Admittance vs. Drain Current
Ordering Information
(Note 6)
Part Number
DMN2005DLP4K-7
Notes:
Case
DFN1310H4-6
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DL
DMN2005DLP4K
Document number: DS30801 Rev. 8 - 2
DL = Product Type Marking Code
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© Diodes Incorporated
DMN2005DLP4K
Package Outline Dimensions
A
DFN1310H4-6
Dim Min Max Typ
A
0.40
⎯
⎯
A1
0
0.05 0.02
A3
0.13
⎯
⎯
b
0.10 0.20 0.15
D
1.25 1.38 1.30
d
0.25
⎯
⎯
D2
0.30 0.50 0.40
E
0.95 1.075 1.00
e
0.35
⎯
⎯
E2
0.30 0.50 0.40
f
0.10
⎯
⎯
L
0.20 0.30 0.25
Z
0.05
⎯
⎯
All Dimensions in mm
A1
A3
Z
B
D2
R0.
15 0
E2
E
d
L
e
d
f
z
D
Suggested Pad Layout
G2
X2
Y2
G1
b
Y1
G3
DMN2005DLP4K
Document number: DS30801 Rev. 8 - 2
a
X1
Dimensions
G1
G2
G3
X1
X2
Y1
Y2
a
b
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Value (in mm)
0.16
0.17
0.15
0.52
0.20
0.52
0.375
0.09
0.06
October 2009
© Diodes Incorporated
DMN2005DLP4K
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMN2005DLP4K
Document number: DS30801 Rev. 8 - 2
5 of 5
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October 2009
© Diodes Incorporated