SPICE MODELS: MMDT3946 MMDT3946 Lead-free COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · · Complementary Pair A One 3904-Type NPN, One 3906-Type PNP C2 B1 SOT-363 E1 Epitaxial Planar Die Construction B C Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package E2 Mechanical Data K · · J Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C · · · · Terminal Connections: See Diagram M D C2 B1 F L E1 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking (See Page 3): K46 E2 B2 Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal C1 G H Lead Free/RoHS Compliant (Note 3) · · · B2 Dim C1 F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm E1, B1, C1 = PNP3906 Section E2, B2, C2 = NPN3904 Section Ordering & Date Code Information: See Page 3 Weight: 0.006 grams (approximate) Maximum Ratings, NPN 3904 Section Characteristic @ TA = 25°C unless otherwise specified Symbol NPN 3904 Section Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 200 mA Power Dissipation (Note 1, 2) Pd 200 mW RqJA 625 °C/W Thermal Resistance, Junction to Ambient (Note 1) Maximum Ratings, PNP 3906 Section Characteristic @ TA = 25°C unless otherwise specified Symbol PNP 3906 Section Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous (Note 1) IC -200 mA Power Dissipation (Note 1, 2) Pd 200 mW RqJA 625 °C/W Thermal Resistance, Junction to Ambient (Note 1) Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. DS30123 Rev. 8 - 2 1 of 5 www.diodes.com MMDT3946 ã Diodes Incorporated Electrical Characteristics, NPN 3904 Section Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 ¾ V IC = 10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 6.0 V IE = 10mA, IC = 0 ICEX ¾ 50 nA VCE = 30V, VEB(OFF) = 3.0V IBL ¾ 50 nA VCE = 30V, VEB(OFF) = 3.0V hFE 40 70 100 60 30 ¾ ¾ 300 ¾ ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) 0.65 ¾ 0.85 0.95 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Output Capacitance Cobo ¾ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 kW Voltage Feedback Ratio hre 0.5 8.0 x 10-4 Small Signal Current Gain hfe 100 400 ¾ Output Admittance hoe 1.0 40 mS Current Gain-Bandwidth Product fT 300 ¾ MHz VCE = 20V, IC = 20mA, f = 100MHz Noise Figure NF ¾ 5.0 dB VCE = 5.0V, IC = 100mA, RS = 1.0kW, f = 1.0kHz Delay Time td ¾ 35 ns Rise Time tr ¾ 35 ns Storage Time ts ¾ 200 ns Fall Time tf ¾ 50 ns OFF CHARACTERISTICS (Note 4) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V SMALL SIGNAL CHARACTERISTICS VCE = 10V, IC = 1.0mA, f = 1.0kHz SWITCHING CHARACTERISTICS Note: VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 4. Short duration pulse test used to minimize self-heating effect. DS30123 Rev. 8 - 2 2 of 5 www.diodes.com MMDT3946 Electrical Characteristics, PNP 3906 Section Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 ¾ V IC = -10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -10mA, IC = 0 ICEX ¾ -50 nA VCE = -30V, VEB(OFF) = -3.0V IBL ¾ -50 nA VCE = -30V, VEB(OFF) = -3.0V hFE 60 80 100 60 30 ¾ ¾ 300 ¾ ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.25 -0.40 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) -0.65 ¾ -0.85 -0.95 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Output Capacitance Cobo ¾ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 2.0 12 kW Voltage Feedback Ratio hre 0.1 10 x 10-4 Small Signal Current Gain hfe 100 400 ¾ Output Admittance hoe 3.0 60 mS Current Gain-Bandwidth Product fT 250 ¾ MHz VCE = -20V, IC = -10mA, f = 100MHz Noise Figure NF ¾ 4.0 dB VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz Delay Time td ¾ 35 ns Rise Time tr ¾ 35 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 75 ns OFF CHARACTERISTICS (Note 4) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -50mA, VCE = IC = -100mA, VCE = -1.0V -1.0V -1.0V -1.0V -1.0V SMALL SIGNAL CHARACTERISTICS VCE = 10V, IC = 1.0mA, f = 1.0kHz SWITCHING CHARACTERISTICS Ordering Information Notes: VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA (Note 5) Device Packaging Shipping MMDT3946-7-F SOT-363 3000/Tape & Reel 4. Short duration pulse test used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K46 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K46 Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code J K L M N P R S T U V W X Y Z Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30123 Rev. 8 - 2 3 of 5 www.diodes.com MMDT3946 15 f = 1MHz 300 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 350 Note 1 250 200 150 100 10 5 Cibo 50 Cobo 0 0.1 0 0 25 50 75 100 125 150 200 175 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage (NPN-3904) TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) 1000 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN IC IB = 10 TA = 125°C 100 TA = +25°C TA = -25°C 10 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 0.1 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current (NPN-3904) 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current (NPN-3904) 100 10 IC IB = 10 f = 1MHz CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 1 0.1 0.1 Cibo Cobo 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current (NPN-3904) DS30123 Rev. 8 - 2 10 4 of 5 www.diodes.com 1 0.1 1 100 10 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 6, Input and Output Capacitance vs. Collector-Base Voltage (PNP-3906) MMDT3946 10 1000 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN IC IB = 10 TA = 125°C 100 TA = +25°C TA = -25°C 10 1 0.1 VCE = 1.0V 0.01 1 1 0.1 10 100 1 1000 IC, COLLECTOR CURRENT (mA) Fig. 7, Typical DC Current Gain vs Collector Current (PNP-3906) 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 8, Typical Collector-Emitter Saturation Voltage vs. Collector Current (PNP-3906) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9, Typical Base-Emitter Saturation Voltage vs. Collector Current (PNP-3906) IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30123 Rev. 8 - 2 5 of 5 www.diodes.com MMDT3946