SPICE MODEL: MMDT5451 MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · A Complementary Pair One 5551-Type NPN, One 5401-Type PNP · · · · SOT-363 B1 C2 E1 B C Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching B2 E2 Ultra-Small Surface Mount Package G H Lead Free/RoHS Compliant (Note 3) Mechanical Data K · · J Case: SOT-363 C1 M D L F Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · · Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 E1, B1, C1 = PNP5401 Section E2, B2, C2 = NPN5551 Section Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). C2 B1 E1 E2 B2 C1 Marking (See Page 3): KNM Ordering & Date Code Information: See Page 3 Weight: 0.006 grams (approx.) Maximum Ratings, NPN 5551 Section Characteristic @ TA = 25°C unless otherwise specified Symbol NPN5551 Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 200 mA Power Dissipation (Note 1, 2) Pd 200 mW RqJA 625 K/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Maximum Ratings, PNP 5401 Section Characteristic @ TA = 25°C unless otherwise specified Symbol PNP5401 Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous (Note 1) IC -200 mA Power Dissipation (Note 1, 2) Pd 200 mW RqJA 625 K/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. DS30171 Rev. 8 - 2 1 of 5 www.diodes.com MMDT5451 ã Diodes Incorporated Electrical Characteristics, NPN 5551 Section Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 180 ¾ V IC = 100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 160 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾ V IE = 10mA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C OFF CHARACTERISTICS (Note 4) Collector Cutoff Current ICBO ¾ 50 nA mA Emitter Cutoff Current IEBO ¾ 50 nA VEB = 4.0V, IC = 0 hFE 80 80 30 ¾ 250 ¾ ¾ IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.15 0.20 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) ¾ 1.0 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Cobo ¾ 6.0 pF VCB = 10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hfe 50 250 ¾ Current Gain-Bandwidth Product fT 100 300 MHz VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz Noise Figure NF ¾ 8.0 dB ON CHARACTERISTICS (Note 4) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Electrical Characteristics, PNP 5401 Section Characteristic VCE = 5.0V, IC = 200mA, RS = 1.0kW, f = 1.0kHz @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -160 ¾ V IC = -100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -150 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -10mA, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, TA = 100°C OFF CHARACTERISTICS (Note 4) Collector Cutoff Current ICBO ¾ -50 nA mA Emitter Cutoff Current IEBO ¾ -50 nA VEB = -3.0V, IC = 0 hFE 50 60 50 ¾ 240 ¾ ¾ IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.2 -0.5 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) ¾ -1.0 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Cobo ¾ 6.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hfe 40 200 ¾ Current Gain-Bandwidth Product fT 100 300 MHz VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -10mA, f = 100MHz Noise Figure NF ¾ 8.0 dB ON CHARACTERISTICS (Note 4) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Notes: VCE = -5.0V, IC = -200mA, RS = 10W, f = 1.0kHz 4. Short duration test pulse used to minimize self-heating effect. DS30171 Rev. 8 - 2 2 of 5 www.diodes.com MMDT5451 Ordering Information (Note 5) Notes: Device Packaging Shipping MMDT5451-7-F SOT-363 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM KNM= Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September KNM Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 0.15 200 IC = 10 IB VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 0.14 150 100 50 0.13 0.12 TA = 150°C 0.11 0.10 0.09 0.08 TA = 25°C 0.07 0.06 0.05 TA = -50°C 0.04 0 0 25 50 75 100 125 150 175 1 200 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current (NPN5551) TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) 1.0 1000 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V TA = 150°C hFE, DC CURRENT GAIN (NORMALIZED) 10 100 TA = 25°C TA = -50°C 10 VCE = 5V 0.9 TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 0.4 TA = 150°C 0.3 0.2 1 1 10 100 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current (NPN5551) IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current (NPN5551) DS30171 Rev. 8 - 2 0.1 3 of 5 www.diodes.com MMDT5451 1000 10.0 IC = 10 IB VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1.0 TA = 150°C 0.1 TA = -50°C TA = 25°C 1 1 10 0.01 100 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 6, Collector Emitter Saturation Voltage vs. Collector Current (PNP5401) 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 10,000 hFE, DC CURRENT GAIN (NORMALIZED) 10 1 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current (NPN5551) VCE = 5V 1000 TA = 150°C 100 TA = 25°C TA = -50°C 10 0.9 VCE = 5V TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 0.4 TA = 150°C 0.3 0.2 0.1 1 1 10 100 0.1 1000 IC, COLLECTOR CURRENT (mA) Fig. 7, DC Current Gain vs. Collector Current (PNP5401) 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 8, Base Emitter Voltage vs. Collector Current (PNP5401) ft, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 10V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9, Gain Bandwidth Product vs Collector Current (PNP5401) DS30171 Rev. 8 - 2 4 of 5 www.diodes.com MMDT5451 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30171 Rev. 8 - 2 5 of 5 www.diodes.com MMDT5451