DIODES MMDT5451_1

SPICE MODEL: MMDT5451
MMDT5451
COMPLEMENTARY NPN / PNP
SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
A
Complementary Pair
One 5551-Type NPN,
One 5401-Type PNP
·
·
·
·
SOT-363
B1
C2
E1
B C
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
B2
E2
Ultra-Small Surface Mount Package
G
H
Lead Free/RoHS Compliant (Note 3)
Mechanical Data
K
·
·
J
Case: SOT-363
C1
M
D
L
F
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
·
·
·
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
E1, B1, C1 = PNP5401 Section
E2, B2, C2 = NPN5551 Section
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
¾
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0°
8°
All Dimensions in mm
Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe).
C2
B1
E1
E2
B2
C1
Marking (See Page 3): KNM
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approx.)
Maximum Ratings, NPN 5551 Section
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
NPN5551
Unit
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous (Note 1)
IC
200
mA
Power Dissipation (Note 1, 2)
Pd
200
mW
RqJA
625
K/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Maximum Ratings, PNP 5401 Section
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
PNP5401
Unit
Collector-Base Voltage
VCBO
-160
V
Collector-Emitter Voltage
VCEO
-150
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current - Continuous (Note 1)
IC
-200
mA
Power Dissipation (Note 1, 2)
Pd
200
mW
RqJA
625
K/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
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MMDT5451
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Electrical Characteristics, NPN 5551 Section
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
180
¾
V
IC = 100mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
160
¾
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 10mA, IC = 0
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100°C
OFF CHARACTERISTICS (Note 4)
Collector Cutoff Current
ICBO
¾
50
nA
mA
Emitter Cutoff Current
IEBO
¾
50
nA
VEB = 4.0V, IC = 0
hFE
80
80
30
¾
250
¾
¾
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.15
0.20
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
¾
1.0
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Cobo
¾
6.0
pF
VCB = 10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hfe
50
250
¾
Current Gain-Bandwidth Product
fT
100
300
MHz
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 10V, IC = 10mA,
f = 100MHz
Noise Figure
NF
¾
8.0
dB
ON CHARACTERISTICS (Note 4)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Electrical Characteristics, PNP 5401 Section
Characteristic
VCE = 5.0V, IC = 200mA,
RS = 1.0kW, f = 1.0kHz
@ TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-160
¾
V
IC = -100mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-150
¾
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
¾
V
IE = -10mA, IC = 0
VCB = -120V, IE = 0
VCB = -120V, IE = 0, TA = 100°C
OFF CHARACTERISTICS (Note 4)
Collector Cutoff Current
ICBO
¾
-50
nA
mA
Emitter Cutoff Current
IEBO
¾
-50
nA
VEB = -3.0V, IC = 0
hFE
50
60
50
¾
240
¾
¾
IC = -1.0mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
IC = -50mA, VCE = -5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-0.2
-0.5
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
¾
-1.0
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Cobo
¾
6.0
pF
VCB = -10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hfe
40
200
¾
Current Gain-Bandwidth Product
fT
100
300
MHz
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
VCE = -10V, IC = -10mA,
f = 100MHz
Noise Figure
NF
¾
8.0
dB
ON CHARACTERISTICS (Note 4)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Notes:
VCE = -5.0V, IC = -200mA,
RS = 10W, f = 1.0kHz
4. Short duration test pulse used to minimize self-heating effect.
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MMDT5451
Ordering Information (Note 5)
Notes:
Device
Packaging
Shipping
MMDT5451-7-F
SOT-363
3000/Tape & Reel
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
KNM= Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
KNM
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
0.15
200
IC
= 10
IB
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
PD, POWER DISSIPATION (mW)
0.14
150
100
50
0.13
0.12
TA = 150°C
0.11
0.10
0.09
0.08
TA = 25°C
0.07
0.06
0.05
TA = -50°C
0.04
0
0
25
50
75
100
125
150
175
1
200
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current (NPN5551)
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature (Total Device)
1.0
1000
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE = 5V
TA = 150°C
hFE, DC CURRENT
GAIN (NORMALIZED)
10
100
TA = 25°C
TA = -50°C
10
VCE = 5V
0.9
TA = -50°C
0.8
0.7
TA = 25°C
0.6
0.5
0.4
TA = 150°C
0.3
0.2
1
1
10
100
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage
vs. Collector Current (NPN5551)
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs
Collector Current (NPN5551)
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MMDT5451
1000
10.0
IC
= 10
IB
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
fT, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 5V
100
10
1.0
TA = 150°C
0.1
TA = -50°C
TA = 25°C
1
1
10
0.01
100
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 6, Collector Emitter Saturation Voltage
vs. Collector Current (PNP5401)
1.0
VBE(ON), BASE EMITTER VOLTAGE (V)
10,000
hFE, DC CURRENT GAIN (NORMALIZED)
10
1
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs.
Collector Current (NPN5551)
VCE = 5V
1000
TA = 150°C
100
TA = 25°C
TA = -50°C
10
0.9
VCE = 5V
TA = -50°C
0.8
0.7
TA = 25°C
0.6
0.5
0.4
TA = 150°C
0.3
0.2
0.1
1
1
10
100
0.1
1000
IC, COLLECTOR CURRENT (mA)
Fig. 7, DC Current Gain vs. Collector Current (PNP5401)
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 8, Base Emitter Voltage vs. Collector Current (PNP5401)
ft, GAIN BANDWIDTH PRODUCT (MHz)
1000
VCE = 10V
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 9, Gain Bandwidth Product vs Collector Current (PNP5401)
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IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
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MMDT5451