PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1151A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low saturation Voltage * High Gain C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -45 V Collector-Emitter Voltage V CEO -40 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -5 A Continuous Collector Current IC -3 A Base Current IB -500 mA 2.5 W -55 to +150 °C Power Dissipation at T amb=25°C † Operating and Storage Temperature Range P tot T j:T stg † The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches x 2 inches FZT1151A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). VALUE PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. MAX. Collector-Base Breakdown Voltage V (BR)CBO -45 -95 V I C=-100µA Collector-Emitter Breakdown Voltage V CES -40 -90 V I C =-100µA Collector-Emitter Breakdown Voltage V CEO -40 -85 V I C =-10mA * Collector-Emitter Breakdown Voltage V CEV -40 -90 V I C =-100µA, V EB=+1V Emitter-Base Breakdown Voltage V (BR)EBO -5 -8.5 V I E=-100µA Collector Cut-Off Current I CBO -0.3 -100 nA V CB=-36V Emitter Cut-Off Current I EBO -0.3 -100 nA V EB=-4V Collector Emitter Cut-Off Current I CES -0.3 -100 nA V CE =-32V Collector-Emitter Saturation Voltage V CE(sat) -60 -120 -140 -170 -200 -90 -180 -220 -260 -300 mV mV mV mV mV I C=-0.1A, I B=-1.0mA* I C=-0.5A, I B=-5mA* I C=-1A, I B=-20mA* I C=-1.8A, I B=-70mA* I C=-3A, I B=-250mA* Base-Emitter Saturation Voltage V BE(sat) -985 -1100 mV I C=-3A, I B=-250mA* Base-Emitter Turn-On Voltage V BE(on) -850 -1000 mV I C =-3A, V CE=-2V* Static Forward Current Transfer Ratio h FE Transition Frequency fT 145 MHz I C=-50mA, V CE=-10V f=50MHz Output Capacitance C cb 40 pF V CB=-10V, f=1MHz Switching Times t on 170 ns I C=-2A, I B=-20mA, V CC=-30V t off 460 ns I C=-2A, I B=±20mA, V CC=-30V 270 250 180 100 450 400 300 190 45 I C=-10mA, V CE=-2V* I C=-0.5A, V CE=-2V* I C=-2A, V CE=-2V* I C=-3A, V CE=-2V* I C=-5A, V CE=-2V* 800 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%. FZT1151A TYPICAL CHARACTERISTICS 1.0 1.0 +25°C IC/IB=100 0.8 VCE(sat) - (V) VCE(sat) - (V) 0.8 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 0.6 0.4 0.6 -55°C +25°C +100°C 0.4 0.2 0.2 0 0 1m 10m 100m 1 10 1m 10m IC - Collector Current (A) VCE(sat) v IC 100m 10 1 IC - Collector Current (A) VCE(sat) v IC 750 1.4 VCE=2V IC/IB=100 VBE(sat) - (V) hFE - Typical Gain 1.2 500 250 +100°C +25°C -55°C 1.0 0.8 0.6 -55°C +25°C +100°C 0.4 0.2 0 0 1m 10m 100m 1 10 1m IC - Collector Current (A) hFE v IC 1.2 IC - Collector Current (A) 0.9 VBE(on) - (V) 1 100m 10 10 VCE=2V 0.6 -55°C +25°C +100°C 0.3 0 1m 10m IC - Collector Current (A) VBE(sat) v IC 10m 100m 1 IC - Collector Current (A) VBE(on) v IC 10 1 100m 10m 100m DC 1s 100ms 10ms 1ms 100us 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100 FZT1151A THERMAL CHARACTERISTICS D=1 D=t1 tP t1 40 tP 30 20 D=0.5 10 D=0.05 D=0.2 D=0.1 Single Pulse 0 100µs 1ms 10ms 100ms 1s 10s 100s Pulse Width Transient Thermal Resistance Max Power Dissipation - (Watts) Thermal Resistance (°C/W) 4 50 3 2 1 0 0 20 40 60 80 100 120 140 160 T - Ambient Temperature (°C) Derating curve SPICE PARAMETERS *ZETEX FZT1151A Spice model Last revision 12/12/96 * .MODEL FZT1151A PNP IS =1.7e-12 NF =1.004 ISE=1.02e-13 + NE =1.55 BF =562 VAF=26.01 IKF=3.5 NR =.97 + ISC= 1.5e-13 NC =1.3 BR =38 VAR=2.41 IKR=0.3 + RE =25.37e-3 RB =250e-3 RC =25e-3 CJE=440e-12 + CJC=160e-12 VJC=1.058 MJC= 0.5678 TF =0.8e-9 TR =55.5e-9 * 1995 ZETEX PLC The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.