SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR FZT857 ISSUE 5 - AUGUST 2003 FEATURES * Up to 3.5 Amps continuous collector current, up to 5 Amp peak * VCEO = 300V * Very low saturation voltage * Excellent hFE specified up to 3 Amps C E PARTMARKING DETAIL COMPLEMENTARY TYPE - FZT857 FZT957 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 350 V Collector-Emitter Voltage V CEO 300 V Emitter-Base Voltage V EBO 6 V Peak Pulse Current I CM 5 A Continuous Collector Current IC Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg 3.5 A 3 W -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches square. FZT857 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO 350 Collector-Emitter Breakdown Voltage V (BR)CER Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 475 V I C=100µA 350 475 V I C =1µA, RB ≤1kΩ V (BR)CEO 300 350 V I C=10mA* Emitter-Base Breakdown Voltage V (BR)EBO 6 8 V I E=100µA Collector Cut-Off Current I CBO 50 1 nA µA V CB=300V V CB=300V, T amb=100°C Collector Cut-Off Current I CER R ≤1kΩ 50 1 nA µA V CB=300V V CB=300V, T amb=100°C Emitter Cut-Off Current I EBO 10 nA V EB=6V Collector-Emitter Saturation Voltage V CE(sat) 100 155 230 345 mV mV mV mV I C=500mA, I B=50mA* I C=1A, I B=100mA* I C=2A, I B=200mA* I C=3.5A, I B=600mA* Base-Emitter Saturation Voltage V BE(sat) 1250 mV I C=3.5A, I B=600mA* Base-Emitter Turn-On Voltage V BE(on) 1.12 V I C =3.5A, V CE=10V* Static Forward Current Transfer Ratio h FE Transition Frequency fT 80 MHz I C==100mA, V CE=10V f=50MHz Output Capacitance C obo 11 pF V CB=20V, f=1MHz Switching Times t on t off 100 5300 ns ns I C=250mA, I B1=25mA I B2=25mA, V CC=50V 100 100 15 200 200 25 15 MAX. I C=10mA, V CE=5V I C=500mA, V CE=10V* I C=2A, V CE=10V* I C=3A, V CE=10V* 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device FZT857 TYPICAL CHARACTERISTICS 1.6 0.6 0.4 IC/IB=10 IC/IB=50 0.2 0 1.2 1.0 0.01 0.1 1 200 0.8 VCE=10V VCE=2V 0.6 100 0.4 0.2 0 0.001 300 1.4 10 0 IC - Collector Current (Amps) 0.01 0.1 10 1 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC VCE=5V 2.0 1.5 VBE - (Volts) VBE(sat) - (Volts) 2.0 IC/IB=10 IC/IB=50 1.0 0.5 IC - Collector Current (A) 0.001 0.01 0.1 1 10 0.01 1 0.0001 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC Single Pulse Test Tamb=25 °C 1 0.1 1.0 0.5 0.0001 10 1.5 DC 1s 100ms 10ms 1ms 100µs 10 100 VCE - Collector Voltage (V) Safe Operating Area 1000 10 hFE - Typical Gain hFE - Normalised Gain VCE(sat) - (Volts) 0.8