UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET TO-263 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 1 1 FEATURES 1 * 10A, 400V, RDS(ON)(0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF740L-TA3-T UF740G-TA3-T UF740L-TF2-T UF740G-TF2-T UF740L-TF3-T UF740G-TF3-T UF740L-TQ2-T UF740G-TQ2-T UF740L-TQ2-R UF740G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 Package TO-220 TO-220F2 TO-220F TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S TO-220 TO-220F TO-220F2 Packing Tube Tube Tube Tube Tape Reel 1 of 6 QW-R502-078,E UF740 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless Otherwise Specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ =25°C~125°C) VDS 400 V Drain to Gate Voltage (RGS = 20kΩ) (TJ =25°C~125°C) VDGR 400 V Gate to Source Voltage VGS ±20 V Continuous ID 10 A Drain Current TC = 100°C ID 6.3 A Pulsed IDM 40 A 125 TO-220/TO-263 W Power Dissipation TO-220F 44 TO-220F2 46 PD TO-220/TO-263 1.0 Derating above 25°C TO-220F 0.35 W/°C TO-220F2 0.37 Single Pulse Avalanche Energy Rating(Note3) EAS 520 mJ Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient Junction to Case TO-220/TO-263 TO-220F TO-220F2 θJc RATINGS 62.5 1.0 2.86 2.72 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, Unless Otherwise Specified.) PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage On-State Drain Current (Note 1) Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Forward Transconductance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge Input Capacitance Output Capacitance Reverse - Transfer Capacitance SYMBOL TEST CONDITIONS BVDSS VGS = 0V, ID = 250μA VGS(THR) VGS = VDS, ID = 250μA ID(ON) VDS >ID(ON) x RDS(ON)MAX, VGS =10V VDS = Rated BVDSS, VGS = 0V IDSS VDS=0.8 x Rated BVDSS, VGS=0V,TJ=125°C IGSS VGS = ±20V RDS(ON) VGS = 10V, ID = 5.2A (Note 1) gFS VDS ≥ 50V, ID = 5.2A (Note 1) tDLY(ON) VDD = 200V, ID ≈ 10A, tR RGS = 9.1Ω, RL = 20Ω, VGS = 10V MOSFET Switching Times are Essentially tDLY(OFF) Independent of Operating Temperature tF VGS = 10V, ID = 10A, IG(REF) = 1.5mA, QG(TOT) VDS = 0.8 x Rated BVDSS Gate Charge is Essentially Independent of QGS Operating Temperature QGD CISS COSS CRSS VGS = 0V, VDS =25V, f = 1.0MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 400 V 2.0 4.0 V 10 A 25 μA 250 μA ±500 nA 0.47 0.55 Ω 5.8 8.9 S 15 21 ns 25 41 ns 52 75 ns 25 36 ns 41 6.5 23 1250 300 80 63 nC nC nC pF pF pF 2 of 6 QW-R502-078,E UF740 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Measured From the Modified MOSFET Contact Screw on Symbol Showing the Internal Devices Tab to Center of Inductances Die Internal Drain Inductance LD Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Measured From the Source Lead, 6mm (0.25in) From Internal Source Inductance LS Header to Source Bonding Pad SOURCE TO DRAIN DIODE SPECIFICATIONS Source to Drain Diode Voltage VSD TJ = 25°C, ISD = 10A, VGS = 0V (Note 1) Modified MOSFET Continuous Source to Drain IS Symbol Showing Current the Integral Reverse P-N Junction Diode Pulse Source to Drain Current ISM (Note 2) MIN TYP MAX UNIT Reverse Recovery Time trr TJ = 25°C, ISD = 10A, dISD/dt = 100A/μs Reverse Recovery Charge QRR TJ = 25°C, ISD = 10A, dISD/dt = 100A/μs Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle≤2%. 2. Repetitive rating: Pulse width limited by maximum junction temperature. 3. (VDD=50V, starting TJ =25°C, L=9.1mH, RG=25Ω, peak IAS = 10A) 170 1.6 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3.5 nH 4.5 nH 7.5 nH 390 4.5 2.0 V 10 A 40 A 790 8.2 ns μC 3 of 6 QW-R502-078,E UF740 Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RL 10% 0 RG VDD D.U.T. VGS 90% 90% VGS 50% 10% 0 tD(ON) tR 50% PULSE WIDTH tD(OFF) tF tON Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tOFF Resistive Switching Waveforms 4 of 6 QW-R502-078,E UF740 Drain Current, ID (A) TYPICAL PERFORMANCE CUVES (Unless Otherwise Specified) Drain Current, ID (A) Power MOSFET Saturation Characteristics Drain Current, ID (A) DUTY CYCLE = 0.5% MAX VGS=10V 12 100 VGS=6.0V VGS=5.5V 9 VGS=5.0V 6 VGS=4.5V 3 VGS=4.0V 0 0 2 4 6 8 10 Drain to Source Current, IDS (ON) (A) 15 PULSE DURATION=80μS Transfer Characteristics 10 0.1 TJ = 25℃ TJ = 150℃ 1 0 2 4 6 8 10 Gate to Source Voltage, VSD (V) Capacitance, C (pF) Normalized Drain to Source Breakdown Voltage Drain to Source Voltage, VDS (V) PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX VDS≥50V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-078,E UF740 Power MOSFET Drain to Source on Resistance vs. Voltage and Drain Current 5 4 20 Pulse Duration=80μs Duty Cycle = 0.5% Max 3 VGS=10V 2 VGS=20V 1 0 25 10 20 Gate to Source Voltage vs. Gate Charge Gate to Source Voltage, VGS (V) Drain to Source on Resistance, RDS (ON) (Ω) Transconductance, gFS (S) Source to Drain Current, ISD (A) TYPICAL PERFORMANCE CUVES (Cont.) 30 40 50 Drain Current, ID (A) ID=10A 16 VDS=80V 12 VDS=200V 8 VDS=320V 4 0 0 12 36 24 Gate Charge, QG (nC) 48 60 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-078,E