UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. TO-220F TO-220F1 FEATURES * RDS(ON) = 0.4Ω@ VGS = 10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer Capacitance ( CRSS = typical 80 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability 1 1 1 TO-252 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF630L-TA3-T UF630G-TA3-T UF630L-TF1-T UF630G-TF1-T UF630L-TF3-T UF630G-TF3-T UF630L-TM3-T UF630G-TM3-T UF630L-TN3-R UF630G-TN3-R UF630L-TN3-T UF630G-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tube 1 of 7 QW-R502-049,F UF630 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Drain-Gate Voltage (RGS = 20kΩ, TJ =25°C ~125°C) Gate-Source Voltage RATINGS UNIT 200 V 200 V ±20 V Continuous Drain Current 9 A Pulsed Drain Current (Note 2) 36 A Single Pulse Avalanche Energy (Note 3) 150 mJ TO-220 75 Power Dissipation PD W TO-220F1/ TO-220F 51 TO-251/ TO-252 54 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 4mH, IAS = 8.3A, VDD = 20V, RG = 25 Ω, Starting TJ = 25°C SYMBOL VDSS VDGR VGSS ID IDM EAS THERMAL DATA PARAMETER TO-220/ TO-220F1/ TO-220F Junction to Ambient TO-251/ TO-252 TO-220 Junction to Case TO-220F1/ TO-220F TO-251/ TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATING 80 110 1.67 2.45 2.3 UNIT °C/W °C/W 2 of 7 QW-R502-049,F UF630 Power MOSFET ELECTRICAL SPECIFICATIONS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage On-State Drain Current (Note 1) BVDSS ID(ON) Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS > ID(ON) x RDS(ON)MAX, VGS = 10V VDS = Rated BVDSS, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1.0MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 90V, ID≈9A, RGS = 9.1Ω, Turn-On Rise Time tR VGS = 10V, RL = 9.6Ω Turn-Off Delay Time tD(OFF) (Note 1, 2) Turn-Off Fall Time tF Total Gate Charge QG VGS = 10V, ID = 9A, VDS = 0.8 x Rated BVDSS Gate-Source Charge QGS IG(REF) = 1.5mA Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS =0V, IS = 9.0A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr IS = 9.0A, dIS/dt = 100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle≤2% Notes: 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 200 V 9 A 2 0.25 10 100 -100 μA nA nA 4 0.4 V Ω 600 250 80 19 10 9 450 3 pF pF pF 30 50 50 40 30 ns ns ns ns nC nC nC 2 V 9 A 36 A ns μC 3 of 7 QW-R502-049,F UF630 Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS BVDSS L RG VDS VDD IAS VDD D.U.T. 0 0.01Ω tp tAV IAS Fig1. Unclamped Energy Test Circuit Fig.2 Unclamped Energy Waveforms VDS RL 10% 0 RG VDD VGS 90% D.U.T. 90% VGS 50% 10% 0 tD(ON) tON Fig.3 Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR PULSE WIDTH 50% tD(OFF) tF tOFF Fig.4 Resistive Switching Waveforms 4 of 7 QW-R502-049,F UF630 TYPICAL CHARACTERISTICS Drain Current, ID (A) Power Dissipation, PD Power MOSFET Forward Bias Safe Operating Area Normalized Transient Thermal Impedance 1.0 0.5 Drain Current, ID (A) Normalized Transient Thermal Impedance, ZθJC 100 0.2 PDM 0.1 0.1 0.05 t1 0.02 t2 0.01 0.01 10-5 Single pulse Duty Factor, D=t1/t2 Peak TJ =PDM×ZθJC RθJC +TC 10-4 10-3 10-2 10-1 1 1ms 10ms Operation in This Area May be Limited by RDS (ON) 1 100ms DC TC=25℃ TJ=Max Rated 1 Rectangular Pulse Duration, t1 (s) 10 100 1000 Drain to Source Voltage, VDS (V) Drain Current, ID (A) Drain Current, ID (A) 100μs 0.1 10 10μs 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-049,F Normalized Drain to Source Breakdown Voltage Normalized Drain to Source on Resistance Drain to Source on Resistance, RDS (ON) Drain Current, ID (A) Gate to Source Voltage, VGS (V) Source to Drain Current, ISD (A) UF630 Power MOSFET TYPICAL CHARACTERISTICS (Cont.) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw QW-R502-049,F 6 of 7 UF630 Power MOSFET TYPICAL CHARACTERISTICS (Cont.) Capacitance, C (pF) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-049,F