MMDFS3P303 Power MOSFET 3 Amps, 30 Volts P–Channel SO–8, FETKY The FETKY product family incorporates low RDS(on), MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter, Buck–Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products. • Power MOSFET with Low VF, Low IR Schottky Rectifier • Lower Component Placement and Inventory Costs along with Board Space Savings • R2 Suffix for Tape and Reel (2500 units/13″ reel) • Mounting Information for SO–8 Package Provided • IDSS Specified at Elevated Temperature • Applications Information Provided • Marking: 3P303 http://onsemi.com 3 AMPERES 30 VOLTS RDS(on) = 100 m VF = 0.42 Volts P–Channel D G S MARKING DIAGRAM MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Notes 1. & 2.) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 30 Vdc Drain–to–Gate Voltage (RGS = 1.0 M) VDGR 30 Vdc Gate–to–Source Voltage – Continuous VGS 20 Vdc Drain Current – Continuous @ TA = 25°C – Continuous @ TA = 100°C – Single Pulse (tp 10 s) ID ID IDM 3.5 2.25 12 Adc PD 2.0 Watts Total Power Dissipation @ TA = 25°C (Note 3.) SO–8 CASE 751 STYLE 18 8 1 L Y WW Apk Single Pulse Drain–to–Source Avalanche EAS 375 mJ Energy – STARTING TJ = 25°C VDD = 30 Vdc, VGS = 10 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 1. Negative sign for P–channel device omitted for clarity. 2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%. 3. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. Anode 1 8 Cathode Anode 2 7 Cathode Source 3 6 Drain Gate 4 5 Drain Top View ORDERING INFORMATION MMDFS3P303R2 November, 2000 – Rev. 2 1 = Location Code = Year = Work Week PIN ASSIGNMENT Device Semiconductor Components Industries, LLC, 2000 6N303 LYWW Package SO–8 Shipping 2500 Tape & Reel Publication Order Number: MMDFS3P303/D MMDFS3P303 SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) VRRM VR 30 Volts IO 3.0 Amps Peak Repetitive Forward Current (Note 3.) (Rated VR, Square Wave, 20 kHz) TA = 105°C Ifrm 6.0 Amps Non–Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Ifsm 30 Amps Thermal Resistance – Junction–to–Ambient (Note 4.) – MOSFET RJA 201 °C/W Thermal Resistance – Junction–to–Ambient (Note 5.) – MOSFET RJA 105 Thermal Resistance – Junction–to–Ambient (Note 3.) – MOSFET RJA 62.5 Thermal Resistance – Junction–to–Ambient (Note 4.) – Schottky RJA 197 Thermal Resistance – Junction–to–Ambient (Note 5.) – Schottky RJA 97 Thermal Resistance – Junction–to–Ambient (Note 3.) – Schottky RJA 62.5 Peak Repetitive Reverse Voltage DC Blocking Voltage Average Forward Current (Note 3.) (Rated VR) TA = 100°C THERMAL CHARACTERISTICS – SCHOTTKY AND MOSFET Operating and Storage Temperature Range Tj, Tstg 3. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. 4. Mounted with minimum recommended pad size, PC Board FR4. 5. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Steady State. °C –55 to 150 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Notes 1. & 6.) Characteristics Symbol Min Typ Max Unit V(BR)DSS 30 – – 27 – – Vdc mV/°C IDSS – – – – 1.0 10 µAdc IGSS – – 100 nAdc VGS(th) 1.0 – 1.7 3.5 – – Vdc mV/°C RDS(on) – – 0.085 0.130 0.100 0.160 gFS – 5.0 – mhos Ciss – 405 – pF Coss – 200 – Crss – 55 – td(on) – 12.5 25 tr – 16 30 td(off) – 50 90 tf – 35 65 OFF CHARACTERISTICS Drain–Source Voltage (VGS = 0 Vdc, ID = 0.25 mA) Temperature Coefficient (Positive) Zero Gate Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 6.) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mA) Temperature Coefficient (Negative) Static Drain–Source Resistance (VGS = 10 Vdc, ID = 3.5 Adc) (VGS = 4.5 Vdc, ID = 2.0 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vd Vdc, VGS = 0 Vdc, Vd f = 1.0 MHz) Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 7.) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 20 Vdc, ID = 2.0 Adc, VGS = 10 Vdc, Vdc RG = 6.0 Ω) Fall Time 1. Negative signs for P–Channel device omitted for clarity. 6. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 7. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 ns MMDFS3P303 MOSFET ELECTRICAL CHARACTERISTICS – continued (TJ = 25°C unless otherwise noted) (Notes 1. & 6.) Characteristics Symbol Min Typ Max Unit td(on) – 19 – ns tr – 36 – td(off) – 27 – tf – 31 – QT – 14 25 Q1 – 1.8 – Q2 – 4.5 – Q3 – 2.85 – VSD – 0.9 1.2 V trr – 26.6 – ns ta – 18.8 – tb – 7.8 – QRR – 0.03 – SWITCHING CHARACTERISTICS – continued (Note 7.) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 20 Vdc, ID = 2.0 Adc, VGS = 4.5 4 5 Vdc, Vdc RG = 6.0 Ω) Fall Time Gate Charge (VDS = 20 Vdc, ID = 3.5 Adc, VGS = 10 Vdc) nC DRAIN SOURCE DIODE CHARACTERISTICS Forward On–Voltage (Note 6.) (IS = 1.7 Adc, VGS = 0 Vdc) Reverse Recovery Time (VGS = 0 V, V IS = 3 3.5 5A A, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge µC SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) g (Note ( Maximum Instantaneous Forward Voltage 6.)) IF = 100 mAdc Ad IF = 3.0 Adc IF = 6.0 Adc VF Maximum Instantaneous Reverse Current (Note ( 6.)) VR = 30 V IR Maximum Voltage Rate of Change VR = 30 V 1. Negative signs for P–Channel device omitted for clarity. 6. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 7. Switching characteristics are independent of operating junction temperature. http://onsemi.com 3 dV/dt TJ = 25°C TJ = 125°C 0.28 0.42 0.50 0.13 0.33 0.45 TJ = 25°C TJ = 125°C 250 – – 25 10,000 Volts A mA V/s MMDFS3P303 TYPICAL FET ELECTRICAL CHARACTERISTICS 10 V 6.0 4.5 V 6.0 V 5.0 TJ = 25°C 4.0 V 5.0 V 3.7 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 6.0 4.0 3.5 V 3.0 3.3 V 2.0 3.0 V 1.0 0 VGS = 2.7 V 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 4.0 3.0 2.0 25°C 1.0 100°C 0 2.0 VDS ≥ 10 V 5.0 1.5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0.5 0.4 0.3 0.2 0.1 4.0 6.0 8.0 10 R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) TJ = 25°C ID = 3.5 A 2.0 0.18 5.0 VGS = 4.5 V 0.14 0.12 0.10 10 V 0.08 0.06 0.04 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance versus Gate–To–Source Voltage Figure 4. On–Resistance versus Drain Current and Gate Voltage 1000 1.8 VGS = 0 V VGS = 10 V ID = 1.5 A 1.4 IDSS , LEAKAGE (nA) R DS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 4.5 TJ = 25°C 0.16 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1.6 4.0 3.5 Figure 2. Transfer Characteristics 0.7 0 3.0 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics 0.6 2.5 2.0 TJ = -55°C 1.2 1.0 0.8 TJ = 125°C 100 100°C 10 0.6 0.4 -50 -25 0 25 50 75 100 125 1.0 150 0 TJ, JUNCTION TEMPERATURE (°C) 5.0 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On–Resistance Variation with Temperature Figure 6. Drain–To–Source Leakage Current versus Voltage http://onsemi.com 4 30 MMDFS3P303 VDS = 0 12 VGS = 0 Ciss 1000 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1200 TJ = 25°C 10 800 C, CAPACITANCE (pF) 25 QT 20 8.0 Crss 600 6.0 Ciss 400 -5.0 5.0 0 VGS 10 15 20 25 ID = 3.5 A 30 0 TJ = 25°C Q3 2.0 Crss 15 Q2 4.0 Coss 200 0 -10 VGS Q1 VDS 2.0 0 4.0 6.0 8.0 10 12 10 5.0 0 14 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) TYPICAL FET ELECTRICAL CHARACTERISTICS QG, TOTAL GATE CHARGE (nC) VDS Figure 8. Gate–To–Source and Drain–To–Source Voltage versus Total Charge GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 2.5 VGS = 10 V TJ = 25°C ID = 2.0 A VDD = 15 V IS, SOURCE CURRENT (AMPS) 1000 t, TIME (ns) td(off) tf tr td(on) 10 1.0 10 1.0 1.5 1.0 0.5 0 100 VGS = 0 V TJ = 25°C 2.0 0 Figure 9. Resistive Switching Time Variation versus Gate Resistance 1.0 ms 10 ms 1.0 0.01 dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.8 1.0 450 VGS = 12 V SINGLE PULSE TA = 25°C 0.1 0.6 Figure 10. Diode Forward Voltage versus Current EAS , SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (AMPS) 10 0.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (OHMS) 100 0.2 1.0 10 400 300 250 200 150 100 50 0 100 ID = 3.5 A 350 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 5 MMDFS3P303 TYPICAL FET ELECTRICAL CHARACTERISTICS 1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE D = 0.5 0.2 NORMALIZED TO RJA AT STEADY STATE (1″ PAD) 0.1 0.1 0.05 CHIP JUNCTION 0.02 0.01 2.32 18.5 50.9 37.1 56.8 24.4 0.0014 F 0.0073 F 0.022 F 0.105 F 0.484 F 3.68 F SINGLE PULSE 0.01 1E-03 AMBIENT 1E-02 1E-01 1E+00 t, TIME (s) 1E+01 1E+02 1E+03 Figure 13. FET Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform 10 85°C 0.1 25°C -40°C TJ = 125°C 1.0 0.1 0.2 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 0.3 0.4 0.5 0.6 0.7 10 85°C TJ = 125°C 1.0 0.1 0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0.2 25°C 0.3 0.4 0.5 0.6 0.7 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 15. Typical Forward Voltage Figure 16. Maximum Forward Voltage http://onsemi.com 6 0.8 MMDFS3P303 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS IR, MAXIMUM REVERSE CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) 0.1 TJ = 125°C 0.01 85°C 0.001 0.0001 25°C TJ = 125°C 0.01 0.001 25°C 0.0001 0.00001 0.00001 0.000001 0.1 0 5.0 10 15 20 25 0.000001 30 0 5.0 VR, REVERSE VOLTAGE (VOLTS) IO , AVERAGE FORWARD CURRENT (AMPS) 10 15 20 25 30 dc FREQ = 20 kHz 4.0 SQUARE WAVE 3.5 3.0 Ipk/Io = 2.5 2.0 Ipk/Io = 5.0 1.5 Ipk/Io = 10 1.0 Ipk/Io = 20 0.5 0 0 20 60 40 1.50 Ipk/Io = 1.25 dc SQUARE WAVE Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = 20 0.50 0.25 0 0 100 120 Figure 20. Current Derating 1.75 0.75 80 TA, AMBIENT TEMPERATURE (°C) Figure 19. Typical Capacitance 1.00 30 5.0 4.5 VR, REVERSE VOLTAGE (VOLTS) PFO , AVERAGE POWER DISSIPATION (WATTS) C, CAPACITANCE (pF) 100 5.0 25 Figure 18. Maximum Reverse Current 1000 0 20 VR, REVERSE VOLTAGE (VOLTS) Figure 17. Typical Reverse Current 10 15 10 1.0 2.0 3.0 4.0 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 21. Forward Power Dissipation http://onsemi.com 7 5.0 140 160 MMDFS3P303 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 NORMALIZED TO RJA AT STEADY STATE (1″ PAD) 0.05 0.02 0.01 0.1010 CHIP JUNCTION 39.422 F 0.01 1.2674 27.987 30.936 36.930 493.26 F 0.0131 F 0.2292 F 2.267 F SINGLE PULSE 0.001 1.0E-05 1.0E-04 AMBIENT 1.0E-03 1.0E-02 1.0E-01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 Figure 22. Schottky Thermal Response TYPICAL APPLICATIONS STEP DOWN SWITCHING REGULATORS LO + + Vin CO - Vout LOAD - Buck Regulator LO + + Vin CO - Vout - Synchronous Buck Regulator http://onsemi.com 8 LOAD 1.0E+03 MMDFS3P303 TYPICAL APPLICATIONS STEP UP SWITCHING REGULATORS L1 + + Vin CO Vout LOAD Q1 - - Boost Regulator + + Vin CO - Vout LOAD - Buck–Boost Regulator MULTIPLE BATTERY CHARGERS Buck Regulator/Charger Q1 Q2 LO D2 BATT #1 + Vin D1 CO - Q3 D3 BATT #2 http://onsemi.com 9 MMDFS3P303 TYPICAL APPLICATIONS Li–lon BATTERY PACK APPLICATIONS Battery Pack PACK + Li-Ion BATTERY CELLS SMART IC DISCHARGE CHARGE Q1 Q2 PACK - SCHOTTKY SCHOTTKY • Applicable in battery packs which require a high current level. • During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge. • During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation. • Under normal operation, both transistors are on. SO–8 FOOTPRINT 0.060 1.52 0.275 7.0 0.155 4.0 0.024 0.6 0.050 1.270 inches mm http://onsemi.com 10 MMDFS3P303 PACKAGE DIMENSIONS SO–8 CASE 751–07 ISSUE V –X– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. A 8 5 0.25 (0.010) S B 1 M Y M 4 K –Y– G C N X 45 SEATING PLANE –Z– 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S XXXXXX ALYW http://onsemi.com 11 DIM A B C D G H J K M N S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0 8 0.25 0.50 5.80 6.20 STYLE 18: PIN 1. 2. 3. 4. 5. 6. 7. 8. ANODE ANODE SOURCE GATE DRAIN DRAIN CATHODE CATHODE INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 8 0.010 0.020 0.228 0.244 MMDFS3P303 FETKY is a trademark of International Rectifier Corporation. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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