ETC NTP10N60/D

NTP10N60, NTB10N60
Preferred Devices
Advance Information
Power MOSFET
10 Amps, 600 Volts
N–Channel TO–220 and D2PAK
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Designed for high voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
10 AMPERES
600 VOLTS
RDS(on) = 0.75 Ω
Features
•
•
•
•
•
•
Higher Current Rating
Lower RDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
N–Channel
D
Typical Applications
•
•
•
•
Switch Mode Power Supplies
PWM Motor Controls
Converters
Bridge Circuits
G
4
S
1
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
VDSS
600
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
600
Vdc
Drain – Continuous
– Continuous @ 100°C
– Single Pulse (tp10 µs)
Vdc
VGS
VGSM
20
40
ID
ID
10
8.0
35
Adc
IDM
PD
201
1.61
Watts
W/°C
Operating and Storage
Temperature Range
TJ, Tstg
–55 to
+150
°C
EAS
500
mJ
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
– Junction–to–Ambient (Note 1.)
Maximum Lead Temperature for
Soldering Purposes, 1/8″ from case
for 10 seconds
2
3
0.62
62.5
50
TL
260
Drain
Drain
NTB10N60
LLYWW
NTP10N60
LLYWW
Gate
Source
°C/W
RθJC
RθJA
RθJA
Gate
NTx10N60
LL
Y
WW
Drain
Source
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
°C
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
November, 2000 – Rev. 1
1
Drain
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
 Semiconductor Components Industries, LLC, 2000
3
D2PAK
CASE 418B
STYLE 2
TO–220AB
CASE 221A
STYLE 5
MARKING DIAGRAMS
AND PIN ASSIGNMENTS
Total Power Dissipation
Derate above 25°C
Single Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 100 V, VGS = 10 Vdc,
IL = 10 A, L = 10 mH, RG = 25 Ω)
2
Unit
Drain–Source Voltage
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp10 ms)
4
1
Device
Package
Shipping
NTP10N60
TO–220AB
50 Units/Rail
NTB10N60
D2PAK
50 Units/Rail
NTB10N60T4
D2PAK
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NTP10N60/D
NTP10N60, NTB10N60
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
600
–
–
585
–
–
–
–
–
–
10
100
–
–
–
–
100
100
2.0
–
2.5
5.8
4.0
–
mV/°C
–
0.6
0.75
Ohm
–
–
–
–
9.0
7.9
gFS
3.0
10
–
mhos
Ciss
–
1840
2580
pF
Coss
–
470
660
Crss
–
20
40
td(on)
–
11.5
20
tr
–
20
40
td(off)
–
50
100
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Collector Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ =125°C)
Vdc
µAdc
IDSS
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0)
IGSS(f)
IGSS(r)
mV/°C
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
ID = 0.25 mA, VDS = VGS
Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 5 Adc)
RDS(on)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 10 Vdc, ID = 5 Adc, TJ = 125°C)
VDS(on)
Forward Transconductance (VDS = 8 Vdc, ID = 5 Adc)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
(VDD = 300 Vdc, ID = 10 Adc,
VGS = 10 Vdc,
Vdc
RG = 9.1 Ω)
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDS = 400 Vdc, ID = 10 Adc,
VGS = 10 Vdc)
ns
tf
–
30
60
QT
–
36
50
Q1
–
8.0
–
Q2
–
11
–
Q3
–
20
–
VSD
–
–
0.85
0.75
1.0
–
Vdc
trr
–
510
–
ns
ta
–
165
–
tb
–
345
–
QRR
–
4.1
–
–
–
3.5
4.5
–
–
–
7.5
–
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
Adc VGS = 0 Vdc,
Vdc
(IS = 10 Adc,
diS/dt = 100 A/µs)
Reverse Recovery Stored
Charge
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
nH
NTP10N60, NTB10N60
20
TJ = 25°C
18
16
VGS = 10 V
5.5 V
5V
14
12
4.5 V
10
8
6
4V
4
15
12.5
25°C
10
TJ = –55°C
7.5
100°C
5
2.5
2
0
VDS ≥ 10 V
17.5
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
20
0
2
4
6
8
10
12
14
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0
16
0
1
2
3
4
5
6
7
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN–TO–SOURCE RESISTANCE ()
Figure 2. Transfer Characteristics
1.8
VGS = 10 V
1.6
1.4
TJ = 100°C
1.2
1
0.8
25°C
0.6
0.4
–55°C
0.2
0
0
2
4
6
8
10
12 14 16
ID, DRAIN CURRENT (AMPS)
18
20
0.90
0.85
TJ = 25°C
0.80
0.75
VGS = 10 V
0.70
15 V
0.65
0.60
0.55
0.50
0.45
0.40
0
Figure 3. On–Resistance versus Drain Current
and Temperature
2
2.5
6
8
10 12 14
16
ID, DRAIN CURRENT (AMPS)
18
20
10,000
VGS = 0 V
2.25
2.0
4
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
VGS = 10 V
ID = 5 A
IDSS, LEAKAGE (nA)
RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)
RDS(on), DRAIN–TO–SOURCE RESISTANCE ()
Figure 1. On–Region Characteristics
8
1.75
1.5
1.25
1.0
0.75
TJ = 125°C
1000
100°C
100
25°C
10
0.5
0.25
0
–50
–25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
1
150
0
Figure 5. On–Resistance Variation with
Temperature
100
200
300
400
500
600
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
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3
NTP10N60, NTB10N60
5000
VGS = 0 V
C, CAPACITANCE (pF)
4500
TJ = 25°C
4000
3500
3000
Ciss
2500
2000
1500
1000
Crss
500
0
–10
Coss
–5
0
VGS
5
10
15
20
25
VDS
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
600
550
QT
500
450
10
9
VDS
8
7
6
300
250
200
Q2
Q1
5
4
TJ = 25°C
ID = 10 A
3
2
1
0
400
350
VGS
150
100
Q3
0
5
10
15
20
25
30
35
Qg, TOTAL GATE CHARGE (nC)
40
45
50
0
1000
TJ = 25°C
ID = 10 A
VDD = 300 V
VGS = 10 V
t, TIME (ns)
12
11
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
td(off)
100
tf
tr
10
1
100
100
TJ = 25°C
VGS = 0 V
ID, DRAIN CURRENT (AMPS)
IS, SOURCE CURRENT (AMPS)
10
8
7
6
5
4
3
2
1
0
10
RG, GATE RESISTANCE ()
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 8. Gate–to–Source and Drain–to–Source
Voltage versus Total Charge
9
td(on)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 s
10
1 ms
10 ms
1
VGS = 20 V
SINGLE PULSE
TC = 25°C
0.1
0.50 0.55 0.60 0.65
0.70 0.75 0.80 0.85
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
100 s
0
Figure 10. Diode Forward Voltage versus Current
d
1
10
100
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
EAS, SINGLE PULSE DRAIN–TO–SOURCE
AVALANCHE ENERGY (mJ)
NTP10N60, NTB10N60
500
450
ID = 10 A
400
350
300
250
200
150
100
50
0
25
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
150
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
1.00E–05
1.00E–04
1.00E–03
1.00E–02
t, TIME (seconds)
Figure 13. Thermal Response
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5
1.00E–01
1.00E+00
1.00E+01
NTP10N60, NTB10N60
PACKAGE DIMENSIONS
TO–220 THREE–LEAD
TO–220AB
CASE 221A–09
ISSUE AA
SEATING
PLANE
–T–
B
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
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6
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
NTP10N60, NTB10N60
PACKAGE DIMENSIONS
D2PAK
CASE 418B–03
ISSUE D
C
E
V
–B–
4
A
1
2
3
S
–T–
SEATING
PLANE
K
J
G
D 3 PL
0.13 (0.005)
H
M
T B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
G
H
J
K
S
V
INCHES
MIN
MAX
0.340
0.380
0.380
0.405
0.160
0.190
0.020
0.035
0.045
0.055
0.100 BSC
0.080
0.110
0.018
0.025
0.090
0.110
0.575
0.625
0.045
0.055
STYLE 2:
PIN 1.
2.
3.
4.
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7
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
8.64
9.65
9.65
10.29
4.06
4.83
0.51
0.89
1.14
1.40
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
14.60
15.88
1.14
1.40
NTP10N60, NTB10N60
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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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NTP10N60/D