NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on−chip trimming which minimizes voltage tolerance and temperature drift. A third terminal allows the reference voltage to be adjusted ±5.0% to calibrate out system errors. In many applications, the NCV1009Z can be used as a pin−to−pin replacement of the LT1009CZ and the LM136Z−2.5 with the external trim network eliminated. http://onsemi.com SO−8 D SUFFIX CASE 751 8 1 PIN CONNECTIONS AND MARKING DIAGRAM NC NC NC 1 8 1009D AYWW Features • 0.2% Initial Tolerance Max. • Guaranteed Temperature Stability • Maximum 0.6 Ω Dynamic Impedance • Wide Operating Current Range • Directly Interchangeable with LT1009 and LM136 for Improved Performance • No Adjustments Needed for Minimum Temperature Coefficient • Meets Mil Std 883C ESD Requirements • Extended Operating Temperature Range for Use in Automotive Applications • NCV Prefix, for Automotive and Other Applications Requiring Site and Change Control GND A Y WW NC NC VREF ADJ. PIN = Assembly Location = Year = Work Week ORDERING INFORMATION Package Shipping† NCV1009D SO−8 95 Units/Rail NCV1009DR2 SO−8 2500 Tape & Reel Device 5.0 V−35 V †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 3.6 kΩ VREF ADJ 10 kΩ∗ TRIM GND *±5.0% Trim Range If the external trim resistor is not used, the “ADJ. PIN” should be left floating. The 10k trim potentiometer does not effect the temperature coefficient of the device. Figure 1. Application Diagram Semiconductor Components Industries, LLC, 2004 August, 2004 − Rev. 6 1 Publication Order Number: NCV1009/D NCV1009 VREF P3 10 pF 15 pF N14 TRIM P2 P1 N16 14 kΩ 20 kΩ 20 pF 20 kΩ 10.15 kΩ 63 kΩ N7 N2 N8 N12 N13 30 kΩ N1 N4 N3 ADJ N10 N9 N5 N6 1.14 kΩ SUBSTRATE GND Figure 2. Block Diagram http://onsemi.com 2 N11 1.14 kΩ 6.785 kΩ D1 N15 NCV1009 MAXIMUM RATINGS* Rating Value Unit Reverse Current 20 mA Forward 10 mA Package Thermal Resistance, SO−8: Junction−to−Case, RθJC Junction−to−Ambient, RθJA 45 165 °C/W °C/W Operating Temperature Range −40 to +125 °C Storage Temperature Range −65 to +150 °C 260 peak 240 peak °C °C Lead Temperature Soldering: Wave Solder (through hole styles only) (Note 1) Reflow: (SMD styles only) (Notes 2, 3) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. 10 second maximum 2. 60 second maximum above 183°C. 3. −5°C / +0°C allowable conditions. *The maximum package power dissipation must be observed. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified.) Test Conditions Characteristic Min Typ Max Unit Reverse Breakdown Voltage IR = 1.0 mA 2.492 2.500 2.508 V Reverse Breakdown Voltage 0°C ≤ TA ≤ 125°C 2.492 2.500 2.508 V Reverse Breakdown Voltage −40°C ≤ TA ≤ 0°C 2.480 2.500 2.508 V Reverse Breakdown Voltage Change with Current 400 µA ≤ IR ≤ 10 mA − − 2.6 3.0 5.0 6.0 mV mV Reverse Dynamic Impedance IR = 1.0 mA − − 0.2 0.4 1.0 1.4 Ω Ω Temperature Stability Average Temperature Coefficient 0°C ≤ TA ≤ 70°C, Note 4 0°C ≤ TA ≤ 70°C, Note 4 − − 1.8 15 − − mV ppm/°C Long Term Stabilty TA = 25°C ±0.1 C, IR = 1.0 mA − 20 − ppm/kHr † Denotes the specifications which apply over full operating temperature range. 4. Average temperature coefficient is defined as the total voltage change divided by the specified temperature range. TYPICAL PERFORMANCE CHARACTERISTICS 5 REVERSE VOLTAGE CHANGE (mV) REVERSE CURRENT (A) 10−1 10−2 10−3 10−4 10−5 0.5 TJ = 25°C 1.0 1.4 1.8 REVERSE VOLTAGE (V) 2.6 2.2 4 3 2 1 0 0 Figure 3. Reverse Current vs. Reverse Voltage 4 8 12 16 REVERSE CURRENT (mA) Figure 4. Change in Reverse Voltage vs. Reverse Current http://onsemi.com 3 20 NCV1009 100 TJ = 25°C DYNAMIC IMPEDANCE (Ω) FORWARD VOLTAGE (V) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 1.0 0.1 10 10 100 1.0 k 10 k FREQUENCY (Hz) FORWARD CURRENT (mA) Figure 5. Forward Voltage vs. Forward Current 100 k Figure 6. Dynamic Impedance vs. Frequency 250 VOLTAGE SWING (V) 0 200 150 2.5 2.0 1.5 5.0 k 1.0 0.5 0 INPUT OUTPUT 100 10.0 4.0 0 50 10 100 1.0 k FREQUENCY (Hz) 10 k 100 k 1 TIME (µs) 0 Figure 7. Zener Noise Voltage vs. Frequency Figure 8. Response Time 2.520 REFERENCE VOLTAGE (V) NOISE (nV/√HZ) ( ) IR = ImA TJ = 25°C 2.510 2.500 2.490 −40 −30 0 25 35 70 105 Figure 9. Reference Voltage vs. Temperature http://onsemi.com 4 20 NCV1009 PACKAGE DIMENSIONS SO−8 D SUFFIX CASE 751−07 ISSUE AC NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07 −X− A 8 5 0.25 (0.010) S B 1 M Y M 4 K −Y− G C N DIM A B C D G H J K M N S X 45 SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 http://onsemi.com 5 mm inches MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0 8 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 8 0.010 0.020 0.228 0.244 NCV1009 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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