NSDEMN11XV6T1, NSDEMN11XV6T5 Common Cathode Quad Array Switching Diode This Common Cathode Epitaxial Planar Quad Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−563 package which is designed for low power surface mount applications, where board space is at a premium. http://onsemi.com (2) (3) (1) Features • Fast trr • Low CD • Pb−Free Packages are Available (4) MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current Symbol Value Unit VR 80 Vdc VRM 80 Vdc IF 100 mAdc IFM 300 mAdc IFSM (Note 1) 2.0 Adc Total Device Dissipation @TA = 25°C Characteristic (Both Junctions Heated) Total Device Dissipation @TA = 25°C Symbol Max Unit PD 357 (Note 2) 2.9 (Note 2) mW Junction and Storage Temperature N9 M G G mW/°C RJA 350 (Note 2) °C/W Symbol Max Unit PD 500 (Note 2) 4.0 (Note 2) mW Derate above 25°C Thermal Resistance, Junction-to-Ambient SOT−563 CASE 463A PLASTIC MARKING DIAGRAM Derate above 25°C Thermal Resistance, Junction-to-Ambient (6) 1 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) (5) mW/°C 1 N9 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device RJA 250 (Note 2) °C/W TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. t = 1 S 2. FR−4 @ Minimum Pad NSDEMN11XV6T1 Package Shipping† SOT−563 4000/Tape & Reel NSDEMN11XV6T1G SOT−563 4000/Tape & Reel (Pb−Free) NSDEMN11XV6T5 SOT−563 8000/Tape & Reel NSDEMN11XV6T5G SOT−563 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 2 1 Publication Order Number: NSDEMN11XV6T1/D NSDEMN11XV6T1, NSDEMN11XV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C) Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V − 0.1 Adc Forward Voltage VF IF = 100 mA − 1.2 Vdc Characteristic Reverse Breakdown Voltage VR IR = 100 A 80 − Vdc Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz − 3.5 pF trr (Note 3) IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR − 4.0 ns Reverse Recovery Time 3. trr Test Circuit on following page. TYPICAL ELECTRICAL CHARACTERISTICS 10 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = −40°C 1.0 0.1 TA = 25°C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 10 0 Figure 1. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Current 1.0 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.9 0.8 0.7 0.6 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance http://onsemi.com 2 8 50 NSDEMN11XV6T1, NSDEMN11XV6T5 tr tp t IF trr t 10% A RL Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT Figure 4. Reverse Recovery Time Test Circuit for the NSDEMN11XV6T1 http://onsemi.com 3 IF = 5.0 mA VR = 6 V RL = 100 OUTPUT PULSE NSDEMN11XV6T1, NSDEMN11XV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 6 5 1 2 L 4 E −Y− 3 b e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A HE DIM A b C D E e L HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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