MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 600 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C RJA 556 °C/W PD 300 mW 2.4 mW/°C RJA 417 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 3 1 SOT−23 (TO−236) CASE 318−08 STYLE 6 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. MARKING DIAGRAM 2X D 2X = Specific Device Code D = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 September, 2004 − Rev. 4 1 Publication Order Number: MMBT4401LT1/D MMBT4401LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 − 60 − 6.0 − − 0.1 − 0.1 20 40 80 100 40 − − − 300 − − − 0.4 0.75 0.75 − 0.95 1.2 250 − − 6.5 − 30 1.0 15 0.1 8.0 40 500 1.0 30 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX Vdc Vdc Vdc Adc Adc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS fT Current −Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre Small −Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe MHz pF pF k X 10− 4 − mhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 15 tr − 20 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 tf − 30 3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. http://onsemi.com 2 ns ns MMBT4401LT1 ORDERING INFORMATION Package Shipping† MMBT4401LT1 SOT−23 (TO−236) 3000 Tape & Reel MMBT4401LT1G SOT−23 (TO−236) (Pb−Free) 3000 Tape & Reel MMBT4401LT3 SOT−23 (TO−236) 10,000 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V +16 V 0 −2.0 V 1.0 to 100 s, DUTY CYCLE ≈ 2.0% 200 +16 V 1.0 to 100 s, DUTY CYCLE ≈ 2.0% 0 1.0 k < 2.0 ns −14 V CS* < 10 pF 1.0 k < 20 ns −4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn−On Time Figure 2. Turn−Off Time http://onsemi.com 3 200 CS* < 10 pF MMBT4401LT1 TRANSIENT CHARACTERISTICS 25°C 100°C 10 7.0 5.0 30 20 3.0 Q, CHARGE (nC) CAPACITANCE (pF) Cobo 10 7.0 5.0 0.2 0.3 0.5 2.0 3.0 5.0 10 1.0 REVERSE VOLTAGE (VOLTS) 20 30 QT 2.0 1.0 0.7 0.5 0.3 0.2 Ccb 3.0 2.0 0.1 VCC = 30 V IC/IB = 10 0.1 50 QA 10 200 50 70 100 30 IC, COLLECTOR CURRENT (mA) 20 Figure 3. Capacitances 100 IC/IB = 10 70 70 20 t, TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 30 t, TIME (ns) VCC = 30 V IC/IB = 10 tr 50 50 30 10 7.0 7.0 10 20 30 50 70 200 100 300 5.0 500 tf 20 10 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6. Rise and Fall Times 300 300 500 100 ts′ = ts − 1/8 tf IB1 = IB2 IC/IB = 10 to 20 VCC = 30 V IB1 = IB2 70 50 t f , FALL TIME (ns) 200 t s′, STORAGE TIME (ns) 500 Figure 4. Charge Data 100 5.0 300 100 70 IC/IB = 20 30 20 IC/IB = 10 10 50 7.0 30 10 20 30 50 70 100 200 300 5.0 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 4 300 500 MMBT4401LT1 SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 10 IC = 1.0 mA, RS = 150 IC = 500 A, RS = 200 IC = 100 A, RS = 2.0 k IC = 50 A, RS = 4.0 k 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8.0 f = 1.0 kHz RS = OPTIMUM RS = SOURCE RS = RESISTANCE 6.0 4.0 2.0 IC = 50 A IC = 100 A IC = 500 A IC = 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 10 20 50 0 100 50 100 200 Figure 9. Frequency Effects 500 1.0k 2.0k 5.0k 10k 20k RS, SOURCE RESISTANCE (OHMS) 50k 100k Figure 10. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 50k 300 hie , INPUT IMPEDANCE (OHMS) hfe , CURRENT GAIN 200 100 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 70 50 30 0.2 0.3 0.5 0.7 1.0 2.0 3.0 20k 10k 5.0k 2.0k 1.0k 500 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 12. Input Impedance 10 5.0 7.0 10 100 7.0 5.0 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 Figure 11. Current Gain hoe, OUTPUT ADMITTANCE ( mhos) h re , VOLTAGE FEEDBACK RATIO (X 10 −4 ) 20 0.1 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 50 20 10 2.0 1.0 0.1 5.0 7.0 10 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance http://onsemi.com 5 5.0 7.0 10 MMBT4401LT1 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 1.0 25°C 0.7 0.5 −55 °C 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.2 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 100 200 500 Figure 16. Collector Saturation Region 1.0 +0.5 TJ = 25°C VBE(sat) @ IC/IB = 10 0.6 0 COEFFICIENT (mV/ °C) VOLTAGE (VOLTS) 0.8 VBE @ VCE = 10 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) VC for VCE(sat) −0.5 −1.0 −1.5 −2.0 100 200 −2.5 0.1 0.2 500 Figure 17. “On” Voltages VB for VBE 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 18. Temperature Coefficients http://onsemi.com 6 MMBT4401LT1 PACKAGE DIMENSIONS CASE 318−08 SOT−23 (TO−236) ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. A L 3 1 V B S 2 G DIM A B C D G H J K L S V C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches SOT−23 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MMBT4401LT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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