MBR20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total (10 A Per Diode Leg) Pb−Free Package is Available SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS 1 2, 4 Applications 3 • Power Supply − Output Rectification • Power Management • Instrumentation 4 Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94, V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperatures for Soldering Purposes: 260 C Max. for 10 Seconds ESD Rating: Human Body Model 3B Machine Model C TO−220AB CASE 221A PLASTIC STYLE 6 1 2 3 MARKING DIAGRAM AYWW MBR20200CTG AKA A Y WW G AKA = Assembly Location = Year = Work Week = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 May, 2008 − Rev. 9 1 MBR20200CT MBR20200CTG Package Shipping TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: MBR20200CT/D MBR20200CT MAXIMUM RATINGS (Per Leg) Symbol Value Unit VRRM VRWM VR 200 V IF(AV) 10 20 A Peak Repetitive Forward Current per Leg (Square Wave, 20 kHz, TC = 158°C) IFRM 20 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −65 to +175 °C dv/dt 10,000 V/ms Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 161°C) Per Leg Per Package Voltage Rate of Change (Rated VR) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Condition Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case Minimum Pad RqJC 2.0 °C/W Maximum Thermal Resistance, Junction−to−Ambient Minimum Pad RqJA 60.0 °C/W ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 10 A, TJ = 25°C) (IF = 10 A, TJ = 125°C) (IF = 20 A, TJ = 25°C) (IF = 20 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR Min Typical Max − − − − 0.80 0.66 0.89 0.76 0.90 0.80 1.00 0.90 − − 0.0002 0.4 1.0 50 Unit V mA DYNAMIC CHARACTERISTICS (Per Leg) Characteristic Capacitance (VR = −5.0 V, TC = 25°C, Frequency = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 Symbol Value Unit CT 500 pF MBR20200CT 100 IF, INSTANTANEOUS FORWARD CURRENT (A) 175°C 150°C 125°C 25°C 10 100°C 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 IR , REVERSE CURRENT ( μ A) 100°C 25°C 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage TJ = 150°C TJ = 125°C 100 TJ = 100°C 10 1 0.1 TJ = 25°C 20 125°C VF, INSTANTANEOUS VOLTAGE (V) 1,000 0 10 VF, INSTANTANEOUS VOLTAGE (V) 10,000 0.01 175°C 150°C 1 0.4 40 60 80 100 120 140 160 180 200 IF(AV), AVERAGE FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 20 18 dc 16 14 12 SQUARE 10 8 6 4 2 0 140 145 150 155 160 165 170 175 VR, REVERSE CURRENT (V) TC, CASE TEMPERATURE (°C) Figure 3. Typical Reverse Current (Per Leg) Figure 4. Current Derating, Case, Per Leg http://onsemi.com 3 1.2 180 20 PF(AV), AVERAGE POWER DISSIPATION (w) IF(AV), AVERAGE FORWARD CURRENT (A) MBR20200CT RJA = 16°C/W RJA = 60°C/W No Heatsink 18 16 14 12 dc 10 SQUARE WAVE 8 6 4 2 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) 26 24 22 20 18 16 14 12 10 8 6 4 2 0 175 TJ = 175°C SQUARE WAVE dc 0 2 Figure 5. Current Derating, Ambient, Per Leg 4 6 8 10 12 14 16 18 20 22 24 26 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 6. Forward Power Dissipation 500 TJ = 25°C C, CAPACITANCE (pF) 400 300 200 100 0 1 2 5 10 20 50 70 100 VR, REVERSE VOLTAGE (V) R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Typical Capacitance (Per Leg) 10 1 0.1 D = 0.5 0.2 0.1 0.05 0.01 0.01 P(pk) SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 8. Thermal Response Junction−to−Case http://onsemi.com 4 10 100 1000 MBR20200CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE SWITCHMODE is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). 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