S1PA thru S1PJ Vishay Semiconductors New Product formerly General Semiconductor High Current Density Surface Mount Glass-Passivated Rectifiers Reverse Voltage 50 to 600 V Case Style SMP Forward Current 1.0 A Features Cathode band • • • • Very low profile - typical height of 1.0mm Ideal for automated placement Glass passivated chip junction For use in rectification, power supply, home appliances and telecommunication • High temperature soldering: 260°C maximum/10 seconds at terminals • Meets MSL level 1 per J-STD-020C 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) Mechanical Data 0.013 (0.35) 0.004 (0.10) Case: SMP Terminals: Matte Tin plated (E3 Suffix) leads, solderable per J-STD-002B and MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.0009 oz., 0.024 g Epoxy meets UL 94V-0 flammability rating 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.000 (0.00) 0.018 (0.45) 0.006 (0.15) Mounting Pad Layout Dimensions in inches and (millimeters) 0.012 (0.30) REF 0.053 (1.35) 0.041 (1.05) 0.036 (0.91) 0.024 (0.61) 0.103 (2.60) 0.087 (2.20) 0.105 (2.67) 0.030 (0.762) 0.025 (0.635) 0.050 (1.27) 0.100 (2.54) 0.032 (0.80) 0.016 (0.40) Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Device marking code Maximum reverse voltage Maximum average forward rectified current Fig.1 Peak forward surge current 10ms single half sine-wave superimposed on rated load Typical thermal resistance (1) Operating junction temperature Storage temperature Electrical Characteristics Symbol VRM IF(AV) S1PA SA 50 S1PB SB 100 S1PD SD 200 1 S1PG SG 400 IFSM 30 RθJA RθJL RθJC TJ, TSTG 105 15 20 150 –55 to +150 S1PJ SJ 600 Unit V A A °C/W °C °C Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol Maximum instantaneous forward voltage(2) at IF=1A, TJ=25°C VF at IF=1A, TJ=125°C Maximum reverse current TJ = 25°C IR at rated VR(2) TJ =125°C Typical reverse recovery time at trr at IF = 0.5A, IR = 1.0A, Irr = 0.25A Value 1.1 0.95 1.0 50 Unit 1.8 µs V µA Typical junction capacitance at 4.0V, 1MHz CJ 6.0 pF Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is measured at the terminal of cathode band. RθJC is measured at the top centre of the body (2) Pulse test: 300µs pulse width, 1% duty cycle Document Number 88917 23-Sep-04 www.vishay.com 1 S1PA thru S1PJ Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Maximum Forward Current Derating Curve 30 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.2 1.0 0.8 0.6 0.4 TL measured at the cathode band terminal 0.2 90 100 110 120 130 140 20 15 10 05 1 150 10 100 Lead Temperature (°C) Number of Cycles at 50 HZ Fig. 3 – Typical Instantaneous Forward Characteristics Fig. 4 – Typical Reverse Leakage Characteristics 100 100 10 Instantaneous Reverse Current (µA) Instantaneous Forward Current (A) 25 0 0 80 TJ = 150°C 1 TJ = 25°C 0.1 TJ = 125°C 0.01 0.4 TJ = 150°C 10 TJ = 125°C 1 0.1 TJ = 25°C 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 20 30 40 60 50 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance Fig. 6 – Typical Transient Thermal Impedance 1000 Transient Thermal Impedance (°C/W) 1000 Junction Capacitance (pF) Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current 100 1 0.1 1 10 Reverse Voltage (V) www.vishay.com 2 100 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration (sec.) Document Number 88917 23-Sep-04