DIODES FCX1151A

SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
FCX1151A
ISSUE 1 - NOVEMBER 1998
FEATURES
*
2W POWER DISSIPATION
*
*
*
*
5A Peak Pulse Current
Excellent HFE Characteristics up to 5 Amps
Extremely Low Saturation Voltage E.g. 60mv Typ.
Extremely Low Equivalent On-resistance;
RCE(sat) 66mΩ at 3A
Complimentary Type Partmarking Detail -
C
E
C
FCX1051A
151
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
-45
V
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current **
ICM
-5
A
Continuous Collector Current
IC
-3
A
Base Current
IB
-500
mA
Power Dissipation at Tamb=25°C
Ptot
1 †
2 ‡
W
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
† recommended Ptot calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
FCX1151A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Breakdown Voltage
UNIT
CONDITIONS.
-45
V
IC=-100µA
V(BR)CES
-40
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-40
V
IC=-10mA
Collector-Emitter
Breakdown Voltage
V(BR)CEV
-40
V
IC=-100µA, VEB=+1V
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-100µA
Collector Cut-Off Current
ICBO
-0.3
-100
nA
VCB=-36V
Emitter Cut-Off Current
IEBO
-0.3
-100
nA
VEB=-4V
Collector Emitter Cut-Off
Current
ICES
-0.3
-100
nA
VCE=-32V
Collector-Emitter
Saturation Voltage
VCE(sat)
-60
-120
-140
-200
-90
-180
-220
-300
mV
mV
mV
mV
IC=-0.1A, IB=-1.0mA*
IC=-0.5A, IB=-5mA*
IC=-1A, IB=-20mA*
IC=-3A, IB=-250mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-985
-1050
mV
IC=-3A, IB=-250mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-850
-950
mV
IC=-3A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
145
MHz
IC=-50mA, VCE=-10V
f=50MHz
Output Capacitance
Ccb
40
pF
VCB=-10V, f=1MHz
Switching Times
ton
170
ns
IC=-2A, IB=-20mA,
VCC=-30V
toff
460
ns
IC=-2A, IB=±20mA,
VCC=-30V
270
250
180
100
TYP.
450
400
300
190
45
MAX.
IC=-10mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-3A, VCE=-2V*
IC=-5A, VCE=-2V*
800
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FCX1151A
TYPICAL CHARACTERISTICS
0.4
0.4
IC/IB=100
+25°C
0.3
0.3
IC/IB=50
IC/IB=100
IC/IB=200
0.2
0.2
0.1
0.1
0
1m
10m
100m
1
10
0
-55°C
+25°C
+100°C
+150°C
1m
10m
IC - Collector Current (A)
VCE(sat) v IC
100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
1.0
800
IC/IB=100
VCE=2V
0.8
600
+100°C
0.6
400
+25°C
200
-55°C
0.4
0
-55°C
+25°C
+100°C
+150°C
0.2
1m
10m
100m
1
10
0
10m
1m
IC - Collector Current (A)
hFE v IC
1
10
10
0.9
1
0.6
0.3
0
100m
IC - Collector Current (A)
VBE(sat) v IC
0.1
-55°C
+25°C
+100°C
+150°C
1m
10m
100m
1
IC - Collector Current (A)
VBE(on) v IC
DC
1s
100ms
10ms
1ms
1us
10
0.01
100m
0.1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100