Super323 SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR ZUMT720 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * * * * 1A Peak Pulse Current Excellent HFE Characteristics Up To 1A (pulsed) Low Saturation Voltage Low Equivalent On Resistance; RCE(sat) APPLICATIONS * Boost functions in DC-DC converters * Motor driver functions DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat) ZUMT720 ZUMT619 T73 240mV at 750mA ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current** ICM -1 A Continuous Collector Current IC -0.75 A Base Current IB -200 mA Power Dissipation at Tamb =25°C* Ptot 385 † 500 ‡ mW -55 to +150 °C Operating and Storage Temperature Tj:Tstg Range † Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 size25x25x0.6mm and using comparable measurement methods adopted by other suppliers. ZUMT720 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO -40 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -40 V IC= -10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE= -100µA Collector Cut-Off Current ICBO -10 nA VCB=-35V Emitter Cut-Off Current IEBO -10 nA VEB=-4V Collector Emitter Cut-Off Current ICES -10 nA VCES=-35V Collector-Emitter Saturation Voltage VCE(sat) -50 -90 -140 -180 -65 -120 -200 -250 mV mV mV mV IC= -0.1A, IB= -10mA* IC= -0.25A, IB=-20mA* IC= -0.5A, IB=-50mA* IC= -0.75A, IB=-100mA* Base-Emitter Saturation Voltage VBE(sat) -1000 -1100 mV IC= -0.75A, IB= -100mA* Base-Emitter Turn-On Voltage VBE(on) -890 IC= -0.75A, VCE= -2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 220 MHz IC= -50mA, VCE=-10V f= 100MHz Output Capacitance Cobo 8 pF VCB= -10V, f=1MHz Turn-On Time t(on) 75 ns Turn-Off Time t(off) 315 ns VCC= -10V, IC=-0.75A IB1=IB2=-100mA 300 300 90 40 20 TYP. MAX. UNIT -1100 mV 510 450 190 60 30 CONDITIONS. IC= -10mA, VCE=-2V* IC= -0.1A, VCE= -2V* IC= -0.5A, VCE=-2V* IC= -0.75A, VCE= -2V* IC= -1A, VCE= -2V* *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ZUMT720 TYPICAL CHARACTERISTICS 1.0 1.0 +25°C IC/IB=10 0.8 0.6 VCE(sat) - (V) VCE(sat) - (V) 0.8 IC/IB=10 IC/IB=50 IC/IB=100 0.4 0.2 0 -55°C +25°C +100°C +150°C 0.6 0.4 0.2 1m 10m 100m 1 0 10 1m 10m IC - Collector Current (A) VCE(sat) v IC 100m 1 10 IC - Collector Current (A) VCE(sat) v IC 1000 750 +100°C 500 +25°C 250 IC/IB=10 1.0 0.8 VBE(sat) - (V) hFE - Typical Gain VCE=2V 0.6 -55°C +25°C +100°C +150°C 0.4 -55°C 0.2 0 1m 10m 100m 1 0 10 1m IC - Collector Current (A) hFE v IC 10m 100m 1 10 IC - Collector Current (A) VBE(sat) v IC IC - Collector Current (A) 10 VBE(on) - (V) 0.8 0.6 0.4 -55°C +25°C +100°C +150°C 0.2 0 1m 10m 100m 1 IC - Collector Current (A) VBE(on) v IC 10 1 100m 10m 100m DC 1s 100ms 10ms 1ms 100µs 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100