Super323 SOT323 NPN SILICON POWER (SWITCHING) TRANSISTOR ZUMT619 ISSUE 2 - DECEMBER 2008 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * LCD backlighting inverter circuits * Boost functions in DC-DC converters DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat) ZUMT619 ZUMT720 T63 160mΩ at 1A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current** ICM 2 A Continuous Collector Current IC 1.0 A Base Current IB 200 mA Power Dissipation at Tamb =25°C Ptot 385 † 500 ‡ mW -55 to +150 °C Operating and Storage Temperature Tj:Tstg Range † Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers. ZUMT619 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 50 V IC= 100µA V(BR)CEO 50 V IC= 10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE= 100µA Collector Cut-Off Current ICBO 10 nA VCB= 40V Emitter Cut-Off Current IEBO 10 nA VEB= 4V Collector Emitter Cut-Off Current ICES 10 nA VCES= 40V Collector-Emitter Saturation Voltage VCE(sat) 24 60 120 160 35 80 200 270 mV mV mV mV IC= 100mA, IB= 10mA* IC= 250mA, IB= 10mA* IC= 500mA, IB= 10mA* IC= 1A, IB= 50mA* Base-Emitter Saturation Voltage VBE(sat) 940 1100 mV IC= 1A, IB= 50mA* Base-Emitter Turn-On Voltage VBE(on) 850 1100 mV IC= 1A, VCE= 2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT Output Capacitance 200 300 200 75 20 TYP. MAX. IC=10mA, VCE= 2V* IC= 100mA, VCE=2 V* IC= 500mA, VCE=2V* IC= 1A, VCE= 2V* IC= 1.5A, VCE=2 V* 420 450 350 130 60 215 MHz Cobo 6 pF Turn-On Time t(on) 150 ns Turn-Off Time t(off) 425 ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% IC= 50mA, VCE=10V f= 100MHz VCB= 10V, f=1MHz VCC=10 V, IC= 1A IB1=IB2=100mA ZUMT619 TYPICAL CHARACTERISTICS 0.4 0.4 +25°C IC/IB=50 0.3 IC/IB=10 IC/IB=50 IC/IB=100 VCE(sat) - (V) VCE(sat) - (V) 0.3 0.2 0.1 0 -55°C +25°C +100°C +150°C 0.2 0.1 1m 10m 100m 1 0 10 1m 10m IC - Collector Current (A) VCE(sat) v IC 1.0 VCE=2V +100°C 400 +25°C -55°C 200 10 IC/IB=50 0.6 0.4 -55°C +25°C +100°C +150°C 0.2 0 0 1m 10m 100m 1 10 1m IC - Collector Current (A) hFE v IC 10m 100m 1 10 IC - Collector Current (A) VBE(sat) v IC 10 IC - Collector Current (A) 1.15 0.9 VBE(on) - (V) 1 0.8 600 VBE(sat) - (V) hFE - Typical Gain 800 100m IC - Collector Current (A) VCE(sat) v IC 0.6 -55°C +25°C +100°C +150°C 0.3 0 1m 10m 100m 1 IC - Collector Current (A) VBE(on) v IC 10 1 100m 10m 100m DC 1s 100ms 10ms 1ms 100µs 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100