DIODES ZXMN3A02N8TA

ZXMN3A02N8
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 30V; RDS(ON) = 0.025
ID = 9.0A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SO8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3A02N8TA
7”
12mm
500 units
ZXMN3A02N8TC
13”
12mm
2500 units
PINOUT
DEVICE MARKING
• ZXMN
3A02
Top View
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1
SEMICONDUCTORS
ZXMN3A02N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
Gate Source Voltage
V GS
Continuous Drain Current V GS =-10V; T A =25°C (b)
V GS =-10V; T A =70°C (b)
V GS =-10V; T A =25°C (a)
Pulsed Drain Current (c)
LIMIT
UNIT
30
V
20
V
ID
9.0
7.2
7.3
A
I DM
44
A
A
Continuous Source Current (Body Diode) (b)
IS
3.2
Pulsed Source Current (Body Diode) (c)
I SM
44
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
1.56
12.5
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
2.5
20
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
80
°C/W
Junction to Ambient (b)
R θJA
50
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.
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SEMICONDUCTORS
2
ZXMN3A02N8
CHARACTERISTICS
ISSUE 4 - JANUARY 2005
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SEMICONDUCTORS
ZXMN3A02N8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
30
TYP.
MAX. UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
I D =250µA, V GS =0V
1
␮A
V DS =30V, V GS =0V
100
nA
V GS =⫾20V, V DS =0V
V
⍀
⍀
I =250␮A, V DS = V GS
D
V GS =10V, I D =12A
V GS =4.5V, I D =10.2A
V DS =10V,I D =12A
1.0
Static Drain-Source On-State Resistance R DS(on)
(1)
Forward Transconductance (1)(3)
V
0.025
0.035
g fs
22
S
Input Capacitance
C iss
1400
pF
Output Capacitance
C oss
209
pF
Reverse Transfer Capacitance
C rss
120
pF
Turn-On Delay Time
t d(on)
3.9
ns
Rise Time
tr
5.5
ns
Turn-Off Delay Time
t d(off)
35.0
ns
Fall Time
tf
7.6
ns
Gate Charge
Qg
14.5
nC
V DS =15V,V GS =5V,
I D =5.5A
(refer to test circuit)
Total Gate Charge
Qg
26.8
nC
Gate-Source Charge
Q gs
4.7
nC
Gate-Drain Charge
Q gd
V DS =15V,V GS =10V,
I D =5.5A
(refer to test circuit)
4.7
nC
Diode Forward Voltage (1)
V SD
0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
DYNAMIC (3)
V DS =25V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
V DD =10V, I D =1A
R G ≅6.0Ω, V GS =4.5V
(refer to test circuit)
SOURCE-DRAIN DIODE
V
T J =25°C, I S =9A,
V GS =0V
17
ns
T J =25°C, I F =5.5A,
di/dt= 100A/µs
8.3
nC
0.95
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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SEMICONDUCTORS
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ZXMN3A02N8
CHARACTERISTICS
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SEMICONDUCTORS
ZXMN3A02N8
CHARACTERISTICS
ISSUE 4 - JANUARY 2005
SEMICONDUCTORS
6
ZXMN3A02N8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
INCHES
⍜
L
H
E
Pin 1
c
A
A1
e
MIN
MAX
MIN
MAX
A
0.053
0.069
1.35
1.75
A1
0.004
0.010
0.10
0.25
D
0.189
0.197
4.80
5.00
H
0.228
0.244
5.80
6.20
E
0.150
0.157
3.80
4.00
L
0.016
0.050
0.40
1.27
e
Seating Plane
b
MILLIMETRES
DIM
D
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES
0.050 BSC
1.27 BSC
b
0.013
0.020
0.33
0.51
c
0.008
0.010
0.19
0.25
⍜
0⬚
8⬚
0⬚
8⬚
h
0.010
0.020
0.25
0.50
© Zetex Semiconductors plc 2005
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ISSUE 4 - JANUARY 2005
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SEMICONDUCTORS