DSS5240T LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • Ideal for Medium Power Amplification and Switching Ultra Low Collector-Emitter Saturation Voltage Complimentary NPN Type Available (DSS4240T) Lead Free By Design/RoHS Compliant (Note 1) “Green” Device (Note 2) • • NEW PRODUCT • • • Case: SOT-23 Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish — Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 2 Ordering Information: See Page 2 Weight: 0.008 grams (approximate) C B Top View Maximum Ratings E Device Schematic @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Collector Current Continuous Collector Current Peak Base Current Symbol VCBO VCEO VEBO ICM IC IBM Value -40 -40 -5 -3 -2 -0.3 Unit V V V A A A Value 600 209 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. DSS5240T Document number: DS31591 Rev. 2 - 2 1 of 4 www.diodes.com November 2008 © Diodes Incorporated DSS5240T Electrical Characteristics @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO -40 -40 -5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -100 -50 -100 V V V nA μA nA ⎯ ⎯ ⎯ ⎯ ⎯ 45 ⎯ ⎯ ⎯ 90 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -100 -110 -225 -225 -350 220 -1.1 -0.75 mΩ V V Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 4) IEBO Collector-Emitter Saturation Voltage VCE(SAT) Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS RCE(SAT) VBE(SAT) VBE(ON) 300 260 210 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Transition Frequency fT 100 ⎯ ⎯ MHz Output Capacitance Cob ⎯ ⎯ 28 pF DC Current Gain hFE ⎯ mV Test Conditions IC = -100μA IC = -10mA IE = -100μA VCB = -30V, IE = 0 VCB = -30V, IE = 0, TA = 150°C VEB = -4V, IC = 0 VCE = -2V, IC = -0.1A VCE = -2V, IC = -0.5A VCE = -2V, IC = -1A VCE = -2V, IC = -2A IC = -100mA, IB = -1mA IC = -500mA, IB = -50mA IC = -750mA, IB = -15mA IC = -1A, IB = -50mA IC = -2A, IB = -200mA IC = -500mA, IB = -50mA IC = -2A, IB = -200mA VCE = -2V, IC = -100mA VCE = -10V, IC = -100mA, f = 100MHz VCB = -10V, f = 1MHz 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 800 2.0 700 1.8 -IC, COLLECTOR CURRENT (A) Notes: PD, POWER DISSIPATION (mW) NEW PRODUCT Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage 600 500 400 300 200 RθJA = 209°C/W 100 1.6 IB = -5mA 1.4 IB = -4mA 1.2 IB = -3mA 1.0 IB = -2mA 0.8 0.6 IB = -1mA 0.4 0.2 0 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) DSS5240T Document number: DS31591 Rev. 2 - 2 2 of 4 www.diodes.com 0 1 2 3 4 5 6 7 8 9 10 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage November 2008 © Diodes Incorporated DSS5240T 10,000 1 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN TA = 150°C T A = 85°C 1,000 T A = 25°C T A = -55°C 100 IC/IB = 10 T A = 85°C TA = 25°C TA = -55°C 0.01 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 1.2 VCE = -2V 1.0 0.8 TA = -55°C 0.6 TA = 25°C TA = 85°C T A = 150°C 0.2 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 0.4 T A = 150°C 0.1 0.001 10 1.2 IC/IB = 10 1.0 0.8 TA = -55°C 0.6 T A = 25°C TA = 85°C 0.4 TA = 150°C 0.2 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 f = 1MHz CAPACITANCE (pF) NEW PRODUCT VCE = -2V 100 Cibo 10 Cobo 100 10 VCE = -10V f = 100MHz 1 1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics DSS5240T Document number: DS31591 Rev. 2 - 2 3 of 4 www.diodes.com 0 10 20 30 40 50 60 70 80 90 100 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current November 2008 © Diodes Incorporated DSS5240T Ordering Information (Note 6) Part Number DSS5240T-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. ZP2 Date Code Key Year Code Month Code 2008 V 2009 W Jan 1 Feb 2 ZP2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) YM NEW PRODUCT Marking Information 2010 X Mar 3 Apr 4 2011 Y May 5 Jun 6 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C H K M K1 D J F L G SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DSS5240T Document number: DS31591 Rev. 2 - 2 4 of 4 www.diodes.com November 2008 © Diodes Incorporated