2DB1713 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Complementary NPN Type Available (2DD2678) Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Case: SOT89-3L Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.072 grams (approximate) • • • • • COLLECTOR 2,4 3 E C 4 1 BASE 1 B 3 EMITTER Top View Maximum Ratings 2 C TOP VIEW Device Schematic Pin Out Configuration @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Symbol VCBO VCEO VEBO ICM IC Value -15 -12 -6 -6 -3 Unit V V V A A Symbol PD RθJA PD RθJA TJ, TSTG Value 0.9 139 2 62.5 -55 to +150 Unit W °C/W W °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: 1. 2. 3. 4. 5. Symbol Min Typ Max Unit Conditions V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO -15 -12 -6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -0.1 -0.1 V V V μA μA IC = -10μA, IE = 0 IC = -1mA, IB = 0 IE = -10μA, IC = 0 VCB = -15V, IE = 0 VEB = -6V, IC = 0 VCE(SAT) hFE ⎯ 270 -120 ⎯ -250 680 mV ⎯ IC = -1.5A, IB = -30mA VCE = -2V, IC = -500mA Cobo ⎯ 40 ⎯ pF fT ⎯ 180 ⎯ MHz VCB = -10V, IE = 0, f = 1MHz VCE = -2V, IC = -100mA, f = 100MHz No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on FR-4 PCB with 1 inch2 copper pad layout. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 2DB1713 Document number: DS31634 Rev. 2 - 2 1 of 4 www.diodes.com December 2008 © Diodes Incorporated 2DB1713 3.0 -IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 1.6 1.2 Note 4 0.8 Note 3 0.4 2.5 IB = -5mA 2.0 IB = -4mA 1.5 IB = -3mA 1.0 IB = -2mA 0.5 IB = -1mA 0 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature 10,000 0 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 1 T A = 85°C 1,000 IC/IB = 20 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = -2V TA = 150°C T A = 25°C TA = -55°C 100 T A = 85°C TA = 25°C TA = -55°C 0.01 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current VCE = -2V 1.0 0.8 TA = -55°C 0.6 T A = 25°C 0.4 T A = 85°C TA = 150°C 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 2DB1713 Document number: DS31634 Rev. 2 - 2 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.2 0.2 T A = 150°C 0.1 0.001 10 1 -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) NEW PRODUCT 2.0 1.2 IC/IB = 20 1.0 0.8 TA = -55°C 0.6 T A = 25°C 0.4 T A = 85°C TA = 150°C 0.2 2 of 4 www.diodes.com 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current December 2008 © Diodes Incorporated 2DB1713 1,000 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) CAPACITANCE (pF) NEW PRODUCT f = 1MHz Cibo 100 C obo 10 VCE = -2V f = 100MHz 1 10 0.1 0 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics Ordering Information 10 20 30 40 50 60 70 80 90 100 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current (Note 6) Part Number 2DB1713-13 Notes: 100 Case SOT89-3L Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 1713 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code 01 - 52 YWW 1713 Package Outline Dimensions R0 D1 .2 00 C E H L B e B1 8° (4 X ) A SOT89-3L Dim Min Max Typ A 1.40 1.60 1.50 B 0.45 0.55 0.50 B1 0.37 0.47 0.42 C 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.50 1.70 1.60 E 2.40 2.60 2.50 e — — 1.50 H 3.95 4.25 4.10 L 0.90 1.20 1.05 All Dimensions in mm D 2DB1713 Document number: DS31634 Rev. 2 - 2 3 of 4 www.diodes.com December 2008 © Diodes Incorporated 2DB1713 Suggested Pad Layout X1 Y1 X3 X2 NEW PRODUCT Y3 Y2 Dimensions Value (in mm) X1 1.7 X2 0.9 X3 0.4 Y1 2.7 Y2 1.3 Y3 1.9 C 3.0 C IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 2DB1713 Document number: DS31634 Rev. 2 - 2 4 of 4 www.diodes.com December 2008 © Diodes Incorporated