DIODES DMMT3906_1

SPICE MODEL: DMMT3906
DMMT3906
Lead-free Green
MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
·
·
Epitaxial Planar Die Construction
Intrinsically Matched PNP Pair (Note 1)
Small Surface Mount Package
SOT-26
2% hFE Matched Tolerance
A
Lead Free/RoHS Compliant (Note 3)
C1
"Green" Device (Note 5 and 6)
B1,2
C2
B C
Mechanical Data
·
·
E1
E2
NC
Case: SOT-26
H
Case Material: Molded Plastic, "Green" Molding
Compound, Note 6. UL Flammability Classification
Rating 94V-0
·
·
·
Terminal Connections: See Diagram
·
·
·
Marking Information - See page 2
Terminals: Solderable per MIL-STD-202, Method 208
K
M
J
D
F
L
Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
Dim
Min
Max
Typ
A
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
¾
¾
0.95
F
¾
¾
0.55
H
2.90
3.10
3.00
J
0.013 0.10
0.05
K
1.00
1.30
1.10
L
0.35
0.55
0.40
M
0.10
0.20
0.15
All Dimensions in mm
Ordering Information: See Below
Weight: 0.015 grams (approximate)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
IC
-200
mA
Collector Current - Continuous
Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage and Temperature Range
Ordering Information
Notes:
1.
2.
3.
4.
5.
6.
Pd
225
mW
RqJA
556
°C/W
Tj, TSTG
-55 to +150
°C
(Note 4 & 6)
Device
Packaging
Shipping
DMMT3906-7-F
SOT-26
3000/Tape & Reel
Built with adjacent die from a single wafer.
Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
No purposefully added lead.
For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30293 Rev. 5 - 2
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DMMT3906
ã Diodes Incorporated
Marking Information
YM
K3Q = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
K3Q
Date Code Key
Year
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
R
S
T
U
V
W
X
Y
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Electrical Characteristics
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-40
¾
V
IC = -10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
¾
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
¾
V
IE = -10mA, IC = 0
ICEX
¾
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
IBL
¾
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
hFE
60
80
100
60
30
¾
¾
300
¾
¾
¾
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-0.25
-0.40
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.65
¾
-0.85
-0.95
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Output Capacitance
Cobo
¾
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
2.0
12
kW
Voltage Feedback Ratio
hre
0.1
10
x 10-4
Small Signal Current Gain
hfe
100
400
¾
Output Admittance
hoe
3.0
60
mS
Current Gain-Bandwidth Product
fT
250
¾
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF
¾
4.0
dB
VCE = -5.0V, IC = -100mA,
RS = 1.0kW, f = 1.0kHz
Delay Time
td
¾
35
ns
Rise Time
tr
¾
35
ns
Storage Time
ts
¾
225
ns
Fall Time
tf
¾
75
ns
OFF CHARACTERISTICS (Note 7)
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 7)
DC Current Gain (Note 8)
IC = -100µA, VCE =
IC = -1.0mA, VCE =
IC = -10mA, VCE =
IC = -50mA, VCE =
IC = -100mA, VCE =
-1.0V
-1.0V
-1.0V
-1.0V
-1.0V
SMALL SIGNAL CHARACTERISTICS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Notes:
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
7. Short duration pulse test used to minimize self-heating effect.
8. The DC current gain, hFE, is matched at IC = -10mA and VCE = -1.0V with typical matched tolerances of 1% and maximum of 2%.
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DMMT3906
100
Note 2
f = 1MHz
CIBO, INPUT CAPACITANCE (pF)
COBO, OUTPUT CAPACITANCE (pF)
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
10
Cibo
50
Cobo
1
0.1
0
0
25
50
75
100
125
150
200
175
100
10
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature, Total Device
10
VCE(SAT), COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
1000
hFE, DC CURRENT GAIN
1
TA = 125°C
100
TA = +25°C
TA = -25°C
10
IC
IB = 10
1
0.1
VCE = 1.0V
0.01
1
1
0.1
10
100
1
1000
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
VBE(SAT), BASE-EMITTER (V)
SATURATION VOLTAGE
1.0
0.9
0.8
0.7
0.6
IC
IB = 10
0.5
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
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DMMT3906
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
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DMMT3906