MMST3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMST3906) Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Notes 3 and 4) C B C B Mechanical Data • • • • • • • • SOT-323 A E G H Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: K2N - See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.006 grams (approximate) Maximum Ratings K M J D E L C Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 α 0° 8° All Dimensions in mm E B Dim @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current – Continuous (Note 1) IC 200 mA Power Dissipation (Note 1) Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com./products/lead_free/index.php. 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30082 Rev. 11 - 2 1 of 4 www.diodes.com MMST3904 © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 ⎯ V IE = 10μA, IC = 0 ICEX ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V IBL ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V hFE 40 70 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ ⎯ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.25 0.30 V Base-Emitter Saturation Voltage VBE(SAT) 0.65 ⎯ 0.85 0.95 V OFF CHARACTERISTICS (Note 5) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain IC = 100μA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA SMALL SIGNAL CHARACTERISTICS Cobo ⎯ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 kΩ Voltage Feedback Ratio hre 0.5 8.0 x 10 Small Signal Current Gain hfe 100 400 ⎯ Output Admittance hoe 1.0 40 μS Current Gain-Bandwith Product fT 300 ⎯ MHz Noise Figure NF ⎯ 5.0 dB Delay Time td ⎯ 35 ns Rise Time tr ⎯ 35 ns Output Capacitance -4 VCE = 10V, IC = 1.0mA, f = 1.0MHz VCE = 20V, IC = 10mA, f = 100MHz VCC = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0MHz SWITCHING CHARACTERISTICS Notes: VCC = 3.0V, IC = 10mA, VBE(OFF) = -0.5V, IB1 = 1.0mA 5. Short duration pulse test used to minimize self-heating effect. DS30082 Rev. 11 - 2 2 of 4 www.diodes.com MMST3904 © Diodes Incorporated 15 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 10 5 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 0 0.1 200 1,000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 1 TA = 125°C hFE, DC CURRENT GAIN 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2 Input and Output Capacitance vs. Collector-Base Voltage 100 T A = -25°C TA = +25°C 10 0.1 VCE = 1.0V 1 0.1 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 10 1 0.1 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current DS30082 Rev. 11 - 2 3 of 4 www.diodes.com MMST3904 © Diodes Incorporated Ordering Information (Notes 4 and 6) Packaging SOT-323 Device MMST3904-7-F Notes: Shipping 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K2N K2N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code 1998 J Month Code 1999 K Jan 1 2000 L Feb 2 2001 M Mar 3 2002 N Apr 4 2003 P May 5 2005 S 2004 R Jun 6 2006 T 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z Jul Aug Sep Oct Nov Dec 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30082 Rev. 11 - 2 4 of 4 www.diodes.com MMST3904 © Diodes Incorporated