MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound, (Note 3). UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) • • • • • • C B Top View Maximum Ratings E Device Schematic @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Symbol VCBO VCEO VEBO IC Value 60 40 6.0 200 Unit V V V mA Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. MMBT3904 Document number: DS30036 Rev. 18 - 2 1 of 4 www.diodes.com December 2008 © Diodes Incorporated MMBT3904 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 4) Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 6.0 ⎯ ⎯ ⎯ ⎯ ⎯ 50 50 V V V nA nA hFE 40 70 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.20 0.30 V Base-Emitter Saturation Voltage VBE(SAT) 0.65 ⎯ 0.85 0.95 V Cobo Cibo hie hre hfe hoe ⎯ ⎯ 1.0 0.5 100 1.0 4.0 8.0 10 8.0 400 40 pF pF kΩ -4 x 10 ⎯ μS fT 300 ⎯ MHz NF ⎯ 5.0 dB td tr ts tf ⎯ ⎯ ⎯ ⎯ 35 35 200 50 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: ⎯ Test Condition IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA 4. Short duration pulse test used to minimize self-heating effect. 1 400 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 0 DC Pw = 100ms 0.01 RθJA = 417°C/W 50 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1) 0 MMBT3904 Document number: DS30036 Rev. 18 - 2 Pw = 10ms 0.1 0.001 2 of 4 www.diodes.com T A = 25°C Single Non-repetitive Pulse DUT mounted onto 1xMRP FR-4 board 0.1 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage December 2008 © Diodes Incorporated MMBT3904 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1,000 100 10 1 0.1 0.01 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 15 CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 1 0.1 10 100 1,000 1 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current Ordering Information 10 5 0 0.1 0.1 1 10 VR, REVERSE VOLTAGE (V) Fig. 6 Typical Capacitance Characteristics 100 (Note 5) Part Number MMBT3904-7-F Notes: 0.1 Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. K1N Date Code Key Year 1998 Code J Month Code Jan 1 1999 K 2000 L Feb 2 MMBT3904 Document number: DS30036 Rev. 18 - 2 2001 M Mar 3 2002 N 2003 P Apr 4 YM Marking Information 2004 2005 R S May 5 K1N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2006 T 2007 U Jun 6 3 of 4 www.diodes.com Jul 7 2008 V 2009 W Aug 8 2010 X Sep 9 2011 2012 Y Z Oct O 2013 A 2014 B Nov N 2015 C Dec D December 2008 © Diodes Incorporated MMBT3904 Package Outline Dimensions A B C H K M K1 D J F L G SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. MMBT3904 Document number: DS30036 Rev. 18 - 2 4 of 4 www.diodes.com December 2008 © Diodes Incorporated