MMBT3906T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • A Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904T) Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) • • • • • • • B C TOP VIEW Mechanical Data • • SOT-523 C E B Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe) Terminal Connections: See Diagram Marking Information: 3N, See Page 3 Ordering & Date Code Information: See Page 3 Weight: 0.002 grams (approximate) G H K M N J L D C E B Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ⎯ ⎯ 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 α 0° 8° ⎯ All Dimensions in mm Maximum Ratings @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V IC -200 mA Pd 150 mW RθJA 833 °C/W Tj, TSTG -55 to +150 °C Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30271 Rev. 8 - 2 1 of 4 www.diodes.com MMBT3906T © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO -40 ⎯ V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ⎯ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -10μA, IC = 0 ICEX ⎯ -50 nA VCE = -30V, VEB(OFF) = -3.0V IBL ⎯ -50 nA VCE = -30V, VEB(OFF) = -3.0V hFE 60 80 100 60 30 ⎯ ⎯ 300 ⎯ ⎯ ⎯ IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.25 -0.40 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) -0.65 ⎯ -0.85 -0.95 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA NF ⎯ 4.0 dB VCE = -5.0Vdc, IC = 100μAdc, RS = 1.0kΩ, f = 1.0kHz Output Capacitance Cobo ⎯ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 2.0 12 kΩ Voltage Feedback Ratio hre 0.1 10 x 10 Small Signal Current Gain hfe 100 400 ⎯ Output Admittance hoe 3.0 60 μS fT 250 ⎯ MHz Delay Time td ⎯ 35 ns Rise Time tr ⎯ 35 ns Storage Time ts ⎯ 225 ns Fall Time tf ⎯ 75 ns Collector Cutoff Current Base Cutoff Current Test Condition ON CHARACTERISTICS (Note 5) DC Current Gain Noise Figure SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product -4 VCE = 1.0V, IC = 10mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz SWITCHING CHARACTERISTICS Notes: VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA 5. Short duration pulse test used to minimize self-heating effect. 100 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) 250 PD, POWER DISSIPATION (mW) VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA 200 150 100 50 0 0 DS30271 Rev. 8 - 2 80 120 160 40 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 10 1 0.1 200 2 of 4 www.diodes.com 1 100 10 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2 Typical Input and Output Capacitance vs. Collector-Base Voltage MMBT3906T © Diodes Incorporated 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1,000 100 10 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 1,000 10 1 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current 1,000 1 0.1 0.01 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 10 1 0.1 0.1 Ordering Information (Note 6) Packaging SOT-523 Device MMBT3906T-7-F Notes: Shipping 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 3N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 3NYM Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code N P R S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30271 Rev. 8 - 2 3 of 4 www.diodes.com MMBT3906T © Diodes Incorporated IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30271 Rev. 8 - 2 4 of 4 www.diodes.com MMBT3906T © Diodes Incorporated