MBRM130L Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop- reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc-dc converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS ANODE CATHODE Features: • • • • • Low Profile - Maximum Height of 1.1 mm Small Footprint - Footprint Area of 8.45 mm2 Low VF Provides Higher Efficiency and Extends Battery Life Supplied in 12 mm Tape and Reel Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink POWERMITE CASE 457 PLASTIC MARKING DIAGRAM Mechanical Characteristics: • • • • • • Powermite is JEDEC Registered as DO-216AA Case: Molded Epoxy Epoxy Meets UL94V-0 at 1/8″ Weight: 62 mg (approximately) Device Marking: BCG Lead and Mounting Surface Temperature for Soldering Purposes. 260°C Maximum for 10 Seconds M BCG BCG M ORDERING INFORMATION Device MAXIMUM RATINGS = Device Code = Date Code Package MBRM130LT1 POWERMITE Please See the Table on the Following Page Shipping 3000/Tape & Reel MBRM130LT3 POWERMITE 12,000/Tape & Reel Semiconductor Components Industries, LLC, 2002 December, 2002 - Rev. 1 1 Publication Order Number: MBRM130L/D MBRM130L MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 30 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 135°C) IFRM 2.0 A Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 50 A Storage Temperature Tstg -55 to 150 °C Operating Junction Temperature TJ -55 to 125 °C dv/dt 10,000 V/s Rtjl Rtjtab Rtja 35 23 277 °C/W Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 135°C) Voltage Rate of Change (Rated VR, TJ = 25°C) THERMAL CHARACTERISTICS Thermal Resistance - Junction-to-Lead (Anode) (Note 1) Thermal Resistance - Junction-to-Tab (Cathode) (Note 1) Thermal Resistance - Junction-to-Ambient (Note 1) 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10. ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 3.0 A) IR Maximum Instantaneous Reverse Current (Note 2), See Figure 4 (VR = 30 V) (VR = 20 V) (VR = 10 V) 2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%. http://onsemi.com 2 TJ = 25°C TJ = 85°C 0.30 0.38 0.52 0.20 0.33 0.50 TJ = 25°C TJ = 85°C 0.41 0.13 0.05 11 5.3 3.2 V mA IF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBRM130L 10 TJ = 125°C TJ = 125°C 1.0 TJ = 85°C TJ = 25°C TJ = -40°C 0.1 0.1 0 0.2 0.3 0.4 0.6 0.5 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 TJ = 125°C 1.0 TJ = 125°C TJ = 85°C TJ = -40°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 2. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 100E-3 10E-3 IR, REVERSE CURRENT (AMPS) TJ = 25°C TJ = 85°C 1.0E-3 100E-6 TJ = 25°C 10E-3 TJ = 85°C 1.0E-3 TJ = 25°C 100E-6 10E-6 1.0E-6 0 5.0 10 15 20 25 30 10E-6 0 5.0 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 3 30 1.8 FREQ = 20 kHz dc 1.6 PFO, AVERAGE POWER DISSIPATION (WATTS) IO, AVERAGE FORWARD CURRENT (AMPS) MBRM130L 1.4 SQUARE WAVE 1.2 1.0 Ipk/Io = 0.8 Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 25 35 45 55 65 75 85 95 105 115 125 TL, LEAD TEMPERATURE (°C) 0.7 0.6 Ipk/Io = Ipk/Io = 5 0.5 Ipk/Io = 10 Ipk/Io = 20 0.3 0.2 0.1 0 0 100 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 25 30 TJ, DERATED OPERATING TEMPERATURE (C) C, CAPACITANCE (pF) TJ = 25°C 10 0.2 0.4 0.6 0.8 1.0 1.2 1.6 1.4 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation 1000 5.0 dc 0.4 Figure 5. Current Derating 0 SQUARE WAVE Figure 7. Capacitance 150 140 130 120 110 100 90 80 70 60 50 40 30 20 Rtja = 10°C/W 15°C/W 20°C/W 25°C/W 35°C/W 0 5.0 10 15 20 25 30 VR, DC REVERSE VOLTAGE (VOLTS) Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax - r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax - r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 4 R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED) R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBRM130L 1.0 50% 20% 0.1 10% 5.0% 0.01 2.0% 1.0% Rtjl(t) = Rtjl*r(t) 0.001 0.00001 0.0001 0.001 0.01 1.0 0.1 10 100 T, TIME (s) Figure 9. Thermal Response Junction to Lead 1.0 50% 20% 0.1 10% 5.0% 0.01 2.0% Rtjl(t) = Rtjl*r(t) 1.0% 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 T, TIME (s) Figure 10. Thermal Response Junction to Ambient 0.025 0.635 0.105 2.67 0.030 0.762 0.100 2.54 0.050 1.27 inches mm Minimum Recommended Footprint http://onsemi.com 5 100 1,000 MBRM130L PACKAGE DIMENSIONS POWERMITE PLASTIC PACKAGE CASE 457-04 ISSUE D F 0.08 (0.003) C -A- J M T B S TERM. 1 -BK TERM. 2 R L J D H -T- 0.08 (0.003) M T B S C S http://onsemi.com 6 S C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. DIM A B C D F H J K L R S MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 −0.05 +0.10 −0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF MBRM130L Notes http://onsemi.com 7 MBRM130L POWERMITE is a registered trademark of and used under a license from MicroSemi Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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