PF0414B MOS FET Power Amplifier Module for DCS 1800 Handy Phone ADE-208-432C (Z) 4th Edition December 1997 Application For DCS 1800 class1 1710 to 1785 MHz. Features • • • • • 3stage amplifier : 0 dBm input Lead less thin & small package : 2 mm Max & 0.2cc High efficiency : 40% Typ at 32.5 dBm Wide gain control range : 70 dB Typ Low voltage operation : 3.5 V Pin Arrangement • RF-K 4 G G 1 3 G G 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage VDD 8 V Supply current I DD 2 A VAPC voltage VAPC 4 V Input power Pin 10 mW Operating case temperature Tc (op) –30 to +100 °C Storage temperature Tstg –30 to +100 °C Output power Pout 3 W PF0414B Electrical Characteristics (Tc = 25°C) Item Symbol Min Typ Max Unit Frequency range f 1710 — 1785 MHz Control voltage range VAPC 0.5 — 2.2 V Drain cutoff current I DS — — 100 µA VDD = 8 V, VAPC = 0 V Total efficiency ηT 35 40 — % Pin = 0 dBm, VDD = 3.5 V, 2nd harmonic distortion 2nd H.D. — –45 –35 dBc Pout = 32.5 dBm (at APC controlled), 3rd harmonic distortion 3rd H.D. — –45 –35 dBc RL = Rg = 50 Ω, Tc = 25°C Input VSWR VSWR (in) — 1.5 3 — Output power (1) Pout (1) 32.5 33.0 — dBm Pin = 0 dBm, VDD = 3.5 V, VAPC = 2.2 V, RL = Rg = 50 Ω, Tc = 25°C Output power (2) Pout (2) 31 31.5 — dBm Pin = 0 dBm, VDD = 3.0 V, VAPC = 2.2 V, RL = Rg = 50 Ω, Tc = 85°C Isolation — — –36 –33 dBm Pin = 0 dBm, VDD = 3.5 V, VAPC = 0.5 V, RL = Rg = 50 Ω, Tc = 25°C Switching time tr, tf — 1 2 µs Pin = 0 dBm, VDD = 3.5 V, Pout = 32.5 dBm, RL = Rg = 50 Ω, Tc = 25°C Stability — No parasitic oscillation — Pin = 0 dBm, VDD = 3 to 5.1 V, Pout ≤ 32.5 dBm (at APC controlled), Rg = 50 Ω, t = 20 sec., Tc = 25°C, Output VSWR = 6 : 1 All phases 2 Test Condition PF0414B Package Dimensions Unit: mm G 3 1 G G 2 1.8 ± 0.2 8.0 ± 0.3 G 8.0 ± 0.3 (7.8) 4 (Upper side) 4 13.75 ± 0.3 3 G G 1 G G 2 G 2 4 G G 3 (2.1) (3.7) (0.6) G (3.7) 1 (2.1) (9.6) (1.8)(1.3)(1.8)(1.6)(1.8)(1.3)(1.8) (2.225) (2.975) (6.875) (6.875) 13.75 ± 0.3 (Bottom side) Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm. 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However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.