PF0210 MOS FET Power Amplifier Module for ADC Mobile Phone ADE-208-102E (Z) Preliminary 6th Edition July 1996 Features • High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK • Low input power: 0 dBm ave. Typ for π /4-DQPSK • Simple bias circuit • High speed switching: 8 µs Typ Pin Arrangement • RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0210 Internal Diagram and External Circuit G G GND GND Pin1 Pin Pin2 VAPC C1 Z1 Pin FB1 Pin3 VDD C3 FB2 VAPC Pin4 Pout C2 VDD Z2 Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line) Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage VDD 17 V Supply current I DD 4 A VAPC voltage VAPC 5.5 V Input power Pin 20 mW Operating case temperature Tc (op) –30 to +100 °C Storage temperature Tstg –40 to +110 °C 2 PF0210 Electrical Characteristics (Tc = 25°C) Analog Transmission Item Symbol Min Typ Max Unit Test Condition Frequency f 824 — 849 MHz — Drain cutoff current I DS — — 500 µA VDD = 17 V, VAPC = 0 V Total efficiency(1) ηT(1) 30 34 — % Pin = 3 dBm, VDD = 12.5 V, 2nd harmonic distortion 2nd H.D. — –55 –30 dBc Pout = 6 W (VAPC controlled), 3rd harmonic distortion 3rd H.D. — –60 –40 dBc Input VSWR VSWR (in) — 2 3 — Output power Pout 6 9 — W Pin = 3 dBm, VDD = 12.5 V, VAPC = 4 V Isolation — — –45 –40 dBm Pin = 3dBm, VDD = 12.5 V, VAPC = 0.5 V Stability — No parasitic oscillation — Pin = 3 dBm, VDD = 12.5 V, Pout ≤ 6 W, Output VSWR = 20:1 All phases Item Symbol Min Typ Max Unit Test Condition Frequency f 824 — 849 MHz — Total efficiency(2) ηT(2) 25 30 — % Pin controlled (π/4-DQPSK, √α = Adjacent channel PADJ (30k) — –30 –28 dBc 0.35, 48.6 kbps), leakage power PADJ (60k) — –50 –46 dBc BW =24.3 kHz with Root Nyquist Input power Pin — — 5 dBm ave. Filter, Pout = 5.5 W ave., VDD = 12.5 V VAPC = 3.9 V Digital Transmission Mechanical Characteristics Item Conditions Spec Torque for screw up the heatsink flange M3 Screw Bolts 4 to 6 kg•cm Warp size of the heatsink flange: S S=0 +0.3/– 0 mm S 3 PF0210 Characteristics Curve VAPC, ηT, VSWR (in) vs. Frequency 60 5 Pin = 2 mW VDD = 12.5 V Pout = 6 W 4 3 4 Apc Voltage VAPC (V) V.S.W.R. (in) 5 50 VAPC 40 3 ηT 30 2 20 2 1 1 0 824 VSWRin 829 Efficiency ηT (%) 6 10 839 834 844 0 849 Frequency f (MHz) Pout, ηT, VSWR (in) vs. Frequency 60 20 Pin = 2 mW VDD = 12.5 V VAPC = 3.9 V ηT 4 3 16 Output Power Pout (W) V.S.W.R. (in) 5 Pout 40 12 30 8 20 2 4 1 0 824 VSWRin 829 834 839 Frequency f (MHz) 4 50 10 844 0 849 Efficiency ηT (%) 6 PF0210 2nd H.D, 3rd H.D vs. Frequency (1) −20 Pin = 2 mW VDD = 12.5 V Pout = 6 W 2nd H.D (dB) −30 −40 −40 −50 −50 2nd H.D −60 −70 824 −30 −60 3rd H.D 829 839 834 Frequency f (MHz) 3rd H.D (dB) −20 844 −70 849 2nd H.D, 3rd H.D vs. Frequency (2) Pin = 2 mW VDD = 12.5 V VAPC = 3.9 V 2nd H.D (dB) −30 −40 −20 −30 −40 −50 3rd H.D −50 −60 2nd H.D −60 −70 824 829 839 834 Frequency f (MHz) 844 3rd H.D (dB) −20 −70 849 5 PF0210 Pout, ηT vs. Frequency (1) 60 20 Pin = 2 mW VDD = 12.5 V VAPC = 3.9 V ηT 50 Pout 40 12 30 8 20 4 0 824 Efficiency ηT (%) Output Power Pout (W) 16 10 829 839 834 844 0 849 Frequency f (MHz) Pout, ηT vs. Frequency (2) 60 ηT 16 Output Power Pout (W) Pin = 2 mW VDD = 12.5 V VAPC = 3.9 V 40 12 30 Pout 8 20 4 10 Tx 0 824 838 Rx 852 866 Frequency f (MHz) 6 50 880 0 894 Efficiency ηT (%) 20 PF0210 VAPC, ηT, VSWR (in) vs. VDD (1) 60 5 f = 824 MHz Pin = 2 mW Pout = 6 W 4 3 4 Apc Voltage VAPC (V) V.S.W.R. (in) 5 VAPC 50 40 3 30 ηT 2 20 2 1 1 0 10.5 VSWRin 11.5 12.5 13.5 Efficiency ηT (%) 6 10 14.5 15.5 0 16.5 Supply Voltage VDD (V) VAPC, ηT, VSWR (in) vs. VDD (2) 60 5 f = 849 MHz Pin = 2 mW Pout = 6 W 4 3 4 Apc Voltage VAPC (V) V.S.W.R. (in) 5 50 VAPC 40 3 ηT 30 2 20 2 1 1 0 10.5 Efficiency ηT (%) 6 VSWRin 10 11.5 12.5 13.5 14.5 15.5 0 16.5 Supply Voltage VDD (V) 7 PF0210 2nd H.D, 3rd H.D vs. VDD (1) −20 f = 824 MHz Pin = 2 mW Pout = 6 W 2nd H.D (dB) −30 −40 −30 −40 2nd H.D −50 −50 −60 3rd H.D (dB) −20 −60 3rd H.D −70 10.5 11.5 12.5 13.5 14.5 15.5 −70 16.5 Supply Voltage VDD (V) 2nd H.D, 3rd H.D vs. VDD (2) −20 f = 849 MHz Pin = 2 mW Pout = 6 W 2nd H.D (dB) −30 −40 −30 −40 −50 −50 2nd H.D −60 −60 3rd H.D −70 10.5 11.5 12.5 13.5 14.5 Supply Voltage VDD (V) 8 15.5 −70 16.5 3rd H.D (dB) −20 PF0210 Pout, ηT vs. VAPC (1) 60 25 f = 824 MHz Pin = 2 mW VDD = 12.5 V 50 40 15 30 Pout 10 20 5 Efficiency ηT (%) Output Power Pout (W) 20 ηT 10 0 0 2 3 2.5 3.5 4 4.5 5 Apc Voltage VAPC (V) Pout, ηT vs. VAPC (2) 60 25 f = 849 MHz Pin = 2 mW VDD = 12.5 V 50 ηT 40 15 30 10 Pout 20 5 Efficiency ηT (%) Output Power Pout (W) 20 10 0 0 2 2.5 3 3.5 4 4.5 5 Apc Voltage VAPC (V) 9 PF0210 Pout, ηT, VSWR (in) vs. Pin (1) 3 f = 824 MHz VDD = 12.5 V VAPC = 3.9 V 12 Output Power Pout (W) V.S.W.R. (in) 5 4 60 15 2 40 ηT 9 50 30 6 Pout 20 3 Efficiency ηT (%) 6 10 VSWRin 1 0 0 0.2 0.6 0.4 0.8 0 1.0 Input Power Pin (mW) Pout, ηT, VSWR (in) vs. Pin (2) 3 f = 849 MHz VDD = 12.5 V VAPC = 3.9 V 12 Output Power Pout (W) V.S.W.R. (in) 5 4 60 15 ηT 40 9 30 Pout 6 20 2 3 1 0 VSWRin 0 0.2 0.4 0.6 Input Power Pin (mW) 10 50 10 0.8 0 1.0 Efficiency ηT (%) 6 PF0210 Package Dimensions 60.5 ± 0.5 57.5 ± 0.5 3 13.0 ± 1 49.8 ± 0.5 0.25 2.3 0.6 5.0 +– 0.3 0.5 4 3.3 2 5±1 1 R1.6 6.35 ± 0.5 11.0 ± 0.3 12.7 ± 0.5 Unit: mm 9.2 ± 1 8.0 ± 1 22.0 ± 1 Hitachi Code JEDEC EIAJ Weight (reference value) RF-B2 — — 16 g 11 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.