SPICE MODEL: DP350T05 DP350T05 Lead-free Green PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features · · · · · · Epitaxial Planar Die Construction Complementary NPN Type Available (DN350T05) SOT-23 Ideal for Medium Power Amplification and Switching A Lead Free By Design/RoHS Compliant (Note 2) · · · · · · Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 C "Green Device" (Note 3) Qualified to AEC-Q101 Standards for High Reliability B C B TOP VIEW E Mechanical Data · · Dim D E G H Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 K J Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram M L C Terminals: Finish ¾ Matte Tin Finish annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking (See Page 2): K3U Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) Maximum Ratings 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0° 8° All Dimensions in mm E B G @ TA = 25°C unless otherwise specified Symbol DP350T05 Unit Collector-Base Voltage Characteristic VCBO -350 V Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5.0 V Continuous Collector Current (Note 1) IC -500 mA Power Dissipation (Note 1) Pd Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30624 Rev. 6 - 2 1 of 3 www.diodes.com DP350T05 ã Diodes Incorporated @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -350 ¾ V IC = -100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -350 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -10mA, IC = 0 Collector Cutoff Current ICBO ¾ -50 nA VCB = -200V, IE = 0 Collector Cutoff Current IEBO ¾ -50 nA VCE = -3.0V, IC = 0 hFE 20 30 30 20 15 ¾ ¾ 200 200 ¾ ¾ IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -30mA, VCE = -10V IC = -50mA, VCE = -10V IC = -100mA, VCE = -10V Collector-Emitter Saturation Voltage VCE(SAT) ¾ ¾ ¾ ¾ -0.30 -0.35 -0.50 -1.0 V IC = -10mA, IB = -1.0mA IC = -20mA, IB = -2.0mA IC = -30mA, IB = -3.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) ¾ ¾ ¾ -0.75 -0.85 -0.90 V IC = -10mA, IB = -1.0mA IC = -20mA, IB = -2.0mA IC = -30mA, IB = -3.0mA Base-Emitter On Voltage VBE(ON) ¾ -2.0 V IC = -100mA, VCE = -10V VCB = -20V, f = 1.0MHz, IE = 0 OFF CHARACTERISTICS (Note 4) ON CHARACTERISTICS (Note 4) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ¾ 7.0 pF Transition Frequency fT 50 ¾ MHz Note: Ordering Information Note: VCE = -10V, IC = -20mA 4. Short duration test pulse used to minimize self-heating effect. (Note 5) Device Packaging Shipping DP350T05-7 SOT-23 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM NEW PRODUCT Electrical Characteristics K3U K3U = Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September Date Code Key Year 2005 2006 2007 2008 2009 Code S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30624 Rev. 6 - 2 2 of 3 www.diodes.com DP350T05 ã Diodes Incorporated 300 VCE = -10V hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 250 300 250 200 150 100 TA = 150°C 150 TA = 75°C 100 TA = 25°C TA = -55°C 50 0 0 25 50 75 100 125 150 0 200 175 -100 IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs. Collector Current -1 -1 IC = 10 IB TA = 150°C VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) -10 -1 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature TA = 125°C TA = 75°C -0.1 TA = 25°C TA = -55°C -0.01 0 TA = 25°C TA = 125°C TA = 150°C IC = 10 IB -0.1 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 TA = 75°C TA = -55°C 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Saturation Voltage vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, Collector-Emitter Saturation Voltage vs Collector Current -1 TA = 125°C 200 50 70 VCE = -10V TA = 25° C -0.9 60 TA = -55°C -0.8 TA = 75°C -0.7 TA = 25°C C, CAPACITANCE (pF) VBE(ON), BASE EMITTER ON VOLTAGE (V) NEW PRODUCT 350 -0.6 -0.5 TA = 150°C -0.4 TA = 125°C -0.3 -0.2 50 Cibo 40 30 20 Cobo 10 -0.1 0 0 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 5, Base-Emitter On Voltage vs. Collector Current DS30624 Rev. 6 - 2 3 of 3 www.diodes.com 0 1 2 3 5 4 VR, REVERSE VOLTAGE (V) Fig. 6, Capacitance vs. Reverse Voltage DP350T05 ã Diodes Incorporated