DIODES MMBT2222A-7-F

SPICE MODEL: MMBT2222A
MMBT2222A
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
Epitaxial Planar Die Construction
SOT-23
Complementary PNP Type Available (MMBT2907A)
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
G
E
0.45
0.60
H
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0°
8°
A
Ideal for Medium Power Amplification and Switching
C
Lead Free/RoHS Compliant (Note 2)
B
C
B TOP VIEW E
Mechanical Data
•
•
•
•
•
•
•
•
•
D
E
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
J
Moisture Sensitivity: Level 1 per J-STD-020C
M
L
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
C
Terminal Connections: See Diagram
Marking (See Page 2): K1P
Ordering & Date Code Information: See Page 4
All Dimensions in mm
E
B
Weight: 0.008 grams (approximate)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Symbol
MMBT2222A
Unit
Collector-Base Voltage
Characteristic
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
IC
600
mA
ICM
800
mA
Collector Current - Continuous
Peak Collector Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Notes:
Pd
300
mW
RθJA
417
°C/W
Tj, TSTG
-55 to +150
°C
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30041 Rev. 11 - 2
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MMBT2222A
 Diodes Incorporated
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic (Note 3)
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
75

V
IC = 10µA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40

V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0

V
IE = 10µA, IC = 0
ICBO

10
nA
µA
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
Collector Cutoff Current
ICEX

10
nA
VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current
IEBO

10
nA
VEB = 3.0V, IC = 0
IBL

20
nA
VCE = 60V, VEB(OFF) = 3.0V
hFE
35
50
75
100
40
50
35



300




IC = 100µA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)

0.3
1.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.6

1.2
2.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Output Capacitance
Cobo

8
pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—
25
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
300

MHz
VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure
NF

4.0
dB
VCE = 10V, IC = 100µA,
RS = 1.0kΩ, f = 1.0kHz
Delay Time
td

10
ns
Rise Time
tr

25
ns
Storage Time
ts

225
ns
Fall Time
tf

60
ns
OFF CHARACTERISTICS
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Note:
3.
VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Short duration test pulse used to minimize self-heating effect.
DS30041 Rev. 11 - 2
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MMBT2222A
1000
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
TA = 125°C
100
TA = -25°C
TA = +25°C
10
50
VCE = 1.0V
0
0
25
50
75
100
1
200
175
150
125
0.1
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
VCE, COLLECTOR-EMITTER VOLTAGE (V)
30
CT, CAPACITANCE (pF)
1000
100
2.0
f = 1MHz
25
20
15
Cibo
10
Cobo
5
0
2
4
6
8
10
12
14
16
18
IC = 30mA
IC = 1mA
IC = 10mA
1.8
1.6
IC = 100mA
1.4
IC = 300mA
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
20
VR, REVERSE VOLTAGE (V)
Fig. 3, Typical Capacitance Characteristics
0.1
0.01
100
10
1
IB, BASE CURRENT (mA)
Fig. 4, Typical Collector Saturation Region
1.0
IC
IB = 10
0.4
TA = 25°C
0.3
TA = 150°C
0.2
0.1
TA = -50°C
0
10
1
1000
100
VBE(ON), BASE EMITTER VOLTAGE (V)
0.5
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
10
IC, COLLECTOR CURRENT (mA)
Fig. 2, Typical DC Current Gain vs
Collector Current
35
0
1
TA = -50°C
0.8
0.7
TA = 25°C
0.6
0.5
TA = 150°C
0.4
0.3
0.2
IC, COLLECTOR CURRENT (mA)
Fig. 5, Collector-Emitter Saturation Voltage
vs. Collector Current
DS30041 Rev. 11 - 2
VCE = 5V
0.9
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0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6, Base-Emitter Voltage vs. Collector Current
MMBT2222A
fT, GAIN BANDWIDTH PRODUCT (MHz)
1000
VCE = 5V
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
Ordering Information
Note:
(Note 4)
Device
Packaging
Shipping
MMBT2222A-7-F
SOT-23
3000/Tape & Reel
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
K1P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K1P
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30041 Rev. 11 - 2
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www.diodes.com
MMBT2222A