SPICE MODEL: MMBT4403 MMBT4403 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · Epitaxial Planar Die Construction SOT-23 Complementary NPN Type Available (MMBT4401) A Ideal for Medium Power Amplification and Switching Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0° 8° C Available in Lead Free/RoHS Compliant Version (Note 2) B C B TOP VIEW E D E Mechanical Data G H · · · · · · · · · Case: SOT-23 K Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 J M L Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 C Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2 Terminal Connections: See Diagram E B All Dimensions in mm Marking (See Page 2): K2T Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous (Note 1) IC -600 mA Power Dissipation (Note 1) Pd 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30058 Rev. 7 - 2 1 of 4 www.diodes.com MMBT4403 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 ¾ V IC = -100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -100mA, IC = 0 ICEX ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V IBL ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V hFE 30 60 100 100 20 ¾ ¾ ¾ 300 ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.40 -0.75 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) -0.75 ¾ -0.95 -1.30 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Output Capacitance Ccb ¾ 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ¾ 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 60 500 ¾ Output Admittance hoe 1.0 100 mS fT 200 ¾ MHz Delay Time td ¾ 15 ns Rise Time tr ¾ 20 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 30 ns OFF CHARACTERISTICS (Note 3) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS Ordering Information Note: VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA (Note 4) Device Packaging Shipping MMBT4403-7 SOT-23 3000/Tape & Reel 3. Short duration pulse test used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT4403-7-F. Marking Information YM K2T = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K2T Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30058 Rev. 7 - 2 2 of 4 www.diodes.com MMBT4403 30 20 CAPACITANCE (pF) Cibo 10 5.0 Cobo 1.0 -0.1 -1.0 -30 -10 VCE, COLLECTOR-EMITTER VOLTAGE (V) REVERSE VOLTS (V) Fig. 1 Typical Capacitance 1.6 1.4 1.2 IC = 10mA IC = 100mA I = 300mA C IC = 30mA IC = 1mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IB,BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region 1.0 IC IB = 10 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 TA = 50°C VBE(ON), BASE EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.5 0 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Collector Emitter Saturation Voltage vs. Collector Current DS30058 Rev. 7 - 2 3 of 4 www.diodes.com VCE = 5V 0.9 0.8 TA = -50°C 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Base-Emitter Voltage vs. Collector Current MMBT4403 1000 hFE, DC CURRENT GAIN fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V TA = 150°C TA = 25°C 100 TA = -50°C 10 VCE = 5V 100 1 10 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 DC Current Gain vs. Collector Current 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Gain Bandwidth Product vs. Collector Current PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 7, Max Power Dissipation vs Ambient Temperature DS30058 Rev. 7 - 2 4 of 4 www.diodes.com MMBT4403