ONSEMI NB3N508SDTG

NB3N508S
3.3V, 216 MHz PureEdge
VCXO Clock Generator with
M−LVDS Output
Description
The NB3N508S is a high precision, low phase noise Voltage
Controlled Crystal Oscillator (VCXO) and phase lock loop (PLL) that
generates 216 MHz M−LVDS output from a 27 MHz crystal. The
±100 ppm output pullable range is obtained using the VIN pin of the
VCXO with usable range from 0 V to 3.3 V. The VCXO input pin VIN
is a high−impedance input that can be driven directly from a pulse
width modulated RC integrator circuit.
The NB3N508S is designed primarily for data and clock recovery
applications within end products such as ADSL modems, set−top box
receivers, and telecom systems. This device is housed in 5.0 mm x
4.4 mm narrow body TSSOP−16 pin package.
http://onsemi.com
MARKING
DIAGRAM
16
16
NB3N
508S
ALYWG
G
1
TSSOP−16
DT SUFFIX
CASE 948F
1
Features
•
•
•
•
•
•
•
•
•
•
PureEdge Clock Family Provides Accuracy and Precision
Performs Precision Clock Multiplication from 27 MHz Crystal
Uses 27 MHz Fundamental Mode Crystal
External Loop Filter is Not Required
216 MHz M−LVDS Output
VCXO with Pull Range $100 ppm
0 V to 3.3 V VCXO Tuning Voltage Range Capabilities
Phase Noise:
Offset
Noise Power
100 Hz
−80 dBc
1 kHz
−88 dBc
10 kHz
−105 dBc
100 kHz −106 dBc
1 MHz
−120 dBc
10 MHz −145 dBc
Operating Range 3.3 V $5%
These are Pb−Free Devices*
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 0
1
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Publication Order Number:
NB3N508S/D
NB3N508S
VDD
X1
27 MHz
Crystal
CLK
VCXO
Phase
Detector
X2
Charge
Pump
VCO
M−LVDS
Output
CLK
VIN
BN
GND
Figure 1. NB3N508S Simplified Logic Diagram
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
2
NB3N508S
X1
1
16
X2
VDD
2
15
NC
VDD
3
14
CLK
VDD
4
13
CLK
VIN
5
12
GND
GND
6
11
NC
GND
7
10
VDD
GND
8
9
NC
NB3N508S
Figure 2. Pin Configuration (Top View)
Table 1. PIN DESCRIPTION
Pin
Name
I/O
Description
1
X1
Crystal Input
Crystal input(IN). Connect to a 27 MHz crystal.
2, 3, 4, 10
VDD
Power Supply
Positive power supply voltage.
5
VIN
Input
6, 7, 8, 12
GND
Power Supply
9, 11, 15
NC
−
13
CLK
M−LVDS Output
Inverted clock output. Typically loaded with 50 W receiver termination resistor across
diff. pair.
14
CLK
M−LVDS Output
Noninverted clock output. Typically loaded with 50 W receiver termination resistor
across diff. pair.
16
X2
Crystal Input
Analog voltage input pin that controls output oscillation frequencies. VIN pin range is
from 0 V to 3.3 V. VIN voltage should not exceed VDD.
Ground 0 V. These pins provide GND return path for the devices.
No Connect.
Crystal input(OUT). Connect to a 27 MHz crystal.
Recommended Crystal Parameters
Crystal Fundamental AT−Cut Frequency
Load Capacitance
Shunt Capacitance, C0
Max Equivalent Series Resistance
Max Initial Accuracy at 25°C
Temperature Stability
Aging
C0/C1 Ration
27 MHz
14 pF
7 pF
35 W
±20 ppm
±30 ppm
±20 ppm
250 Max
http://onsemi.com
3
NB3N508S
Table 2. ATTRIBUTES
Characteristics
ESD Protection
Value
Human Body Model
Machine Model
> 4 kV
> 400 V
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
TSSOP−16
Level 3
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
Transistor Count
6000 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
VDD
Positive Power Supply
GND = 0 V
VI
Input Voltage (VIN)
GND = 0 V
IOUT
M−LVDS Output Current
Continuous
Surge
TA
Operating Temperature Range
TSTG
Storage Temperature Range
qJA
Thermal Resistance
(Junction−to−Ambient)
qJA
Thermal Resistance (Junction−to−Case)
TSOL
Wave Solder
Condition 2
GND v VI v VDD
Rating
Unit
4.6
V
VDD
V
25
50
mA
mA
0 to +70
°C
−65 to +150
°C
0 lfpm
500 lfpm
TSSOP–16
TSSOP–16
138
108
°C/W
°C/W
(Note 2)
TSSOP−16
33 to 36
°C/W
265
°C
Pb−Free
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. JEDEC standard multilayer board − 2S2P (2 Signal, 2 Power).
Table 4. DC CHARACTERISTICS (VDD = 3.135 V to 3.465 V, GND = 0 V, TA = 0°C to +70°C)
Symbol
Characteristic
Min
Typ
Max
Unit
52
62
mA
3.3
V
IDD
Power Supply Current (outputs loaded with RL = 50 W)
42
VIA
VCXO Control Voltage, VIN
0
VOD
Differential Output Voltage (Note 3)
480
650
mV
DVOD
Change in Magnitude of VOD for Complementary Output States
(Notes 3, 6)
−50
50
mV
VOS
Offset Voltage (See Figure 4)
300
2100
mV
DVOS
Change in Magnitude of VOS for Complementary Output States
(Note 6)
−50
50
mV
VOH
Output HIGH Voltage (Note 4)
2425
mV
VOL
Output LOW Voltage (Note 5)
ISC
Output Short Circuit Current
565
1300
−25
CLK or CLK to GND
700
mV
43
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. M−LVDS outputs require 50 W receiver termination resistor between differential. pair. See Figure 3
4. VOHmax = VOSmax + ½ VODmax.
5. VOLmax = VOSmin − ½ VODmax.
6. Parameters guaranteed by design but not tested in production.
http://onsemi.com
4
NB3N508S
Table 5. AC CHARACTERISTICS (VDD = 3.135 V to 3.465 V, GND = 0 V, TA = 0°C to +70°C, Note 7)
Characteristic
Symbol
Min
Typ
Max
Unit
fCLKIN
Crystal Input Frequency
27
MHz
fCLKOUT
Output Clock Frequency
216
MHz
FNOISE
Phase−Noise Performance fCLKOUT = 216 MHz
@ 100 Hz Offset from Carrier
@ 1 kHz Offset from Carrier
@ 10 kHz Offset from Carrier
@ 100 kHz Offset from Carrier
@ 1 MHz Offset from Carrier
@ 10 MHz Offset from Carrier
−80
−88
−105
−106
−120
−145
Spurious Noise Components
−60
FP
Crystal Pullability 0 V v VIN v 3.3 V
tDUTY_CYCLE
Output Clock Duty Cycle (Measured at Crosspoint)
tR
tF
dBc/Hz
dBc/Hz
ppm
"100
45
50
55
%
Output Rise Time (CLK/CLK) (Note 8)
380
500
ps
Output Fall Time (CLK/CLK) (Note 8)
380
500
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
7. CLK/CLK loaded with 50 W receiver termination resistor between diff. pair.
8. Measured differentially (CLK − CLK) at 10% to 90%; RL = 50 W.
NOISE POWER (dBc)
Phase Noise 10.00dB/Ref −20.00dBc/Hz
OFFSET FREQUENCY (Hz)
Figure 3. Typical Phase Noise Plot (VDD = 3.3 V, VIN = 0 V; Room Temperature)
http://onsemi.com
5
NB3N508S
216.06
150
216.04
Maximum
100
FREQUENCY (MHz)
FREQUENCY ERROR (ppm)
200
0
−50
Minimum
−100
25°
216
215.98
−150
70°
215.96
−200
−250
0°
216.02
50
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
215.94
0
0.5
1.0
1.5
2.0
2.5
3.0
3.15 3.3 3.45
VIN, CONTROL VOLTAGE (V)
VIN, CONTROL VOLTAGE (V)
Figure 4. VCXO Pulling Range
Figure 5. Output Clock Frequency vs. VIN and
Temperature
Figure 6. Typical Crystal Startup Time with
VIN = 0 V at Ambient Temperature (1.99 ms)
M−LVDS
Driver
Device
CLK
Figure 7. Typical Crystal Startup Time with
VIN = 3.3 V at Ambient Temperature (694 ms)
Zo = 50 W
D
50 W
CLK
Zo = 50 W
M−LVDS
Receiver
Device
D
Figure 8. Typical Termination for Output Driver and Device Evaluation
CLK
VOH
VOS
VOD
VOL
CLK
Figure 9. H−LVDS Output
http://onsemi.com
6
NB3N508S
ORDERING INFORMATION
Package
Shipping †
NB3N508SDTG
TSSOP−16
(Pb−Free)
96 Units / Rail
NB3N508SDTR2G
TSSOP−16
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
7
NB3N508S
PACKAGE DIMENSIONS
TSSOP−16
CASE 948F−01
ISSUE A
16X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
K
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
8
1
N
0.15 (0.006) T U
S
0.25 (0.010)
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
M
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
G
H
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
DETAIL E
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
8
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NB3N508S/D