MBT6429DW1T1 Amplifier Transistors NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating (3) Symbol 6429DW1T1 Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 55 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 200 mAdc Collector Current − Continuous (4) THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation (Note 1) TA = 25°C PD Thermal Resistance, Junction to Ambient RJA TJ, Tstg Junction and Storage Temperature (2) Max (1) (5) (6) Unit mW MARKING DIAGRAM 833 °C/W 6 −55 to +150 °C 150 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended foot print. 1 SC−88 (SOT−363) 419B 1Td 1 1T d = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† MBT6429DW1T1 SC−88 3000 / Tape & Reel SC−88 (Pb−Free) 3000 / Tape & Reel MBT6429DW1T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 April, 2004 − Rev. 1 1 Publication Order Number: MBT6429DW1T1/D MBT6429DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 45 − 55 − − 0.1 − 0.01 − 0.01 500 500 500 500 − 1250 − − − − 0.2 0.6 0.56 0.66 100 700 − 3.0 − 8.0 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Collector Cutoff Current (VCE = 30 Vdc) ICES Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc Vdc Adc Adc Adc ON CHARACTERISTICS DC Current Gain (IC = 0.01 mAdc, VCE = 5.0 Vdc) (IC = 0.1 mAdc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) VCE(sat) Base −Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) VBE(on) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 MHz pF pF MBT6429DW1T1 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE 30 30 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 20 RS ≈ 0 IC = 10 mA en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) 20 3.0 mA 10 1.0 mA 7.0 5.0 RS ≈ 0 f = 10 Hz 10 100 Hz 7.0 10 kHz 1.0 kHz 5.0 300 A 3.0 10 20 50 100 200 3.0 0.01 0.02 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) Figure 2. Effects of Frequency IC = 10 mA 16 3.0 3.0 mA 1.0 mA 1.0 0.7 0.5 300 A 100 A 0.3 0.2 0.1 RS ≈ 0 10 20 10 A 50 100 200 5.0 10 20 BANDWIDTH = 1.0 Hz 2.0 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 3. Effects of Collector Current NF, NOISE FIGURE (dB) In, NOISE CURRENT (pA) 10 7.0 5.0 100 kHz BANDWIDTH = 10 Hz to 15.7 kHz 12 500 A 8.0 IC = 1.0 mA 100 A 10 A 4.0 30 A 0 10 500 1k 2k 5k 10k 20k 50k 100k f, FREQUENCY (Hz) 20 Figure 4. Noise Current 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 20 BANDWIDTH = 1.0 Hz IC = 10 mA 100 A 100 70 50 NF, NOISE FIGURE (dB) VT, TOTAL NOISE VOLTAGE (nV) 300 200 3.0 mA 1.0 mA 30 300 A 20 10 7.0 5.0 30 A 10 A 16 IC = 10 mA 3.0 mA 1.0 mA 12 300 A 8.0 100 A 30 A 4.0 10 A BANDWIDTH = 1.0 Hz 0 3.0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) 10 Figure 6. Total Noise Voltage 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k RS, SOURCE RESISTANCE (OHMS) Figure 7. Noise Figure http://onsemi.com 3 h FE, DC CURRENT GAIN (NORMALIZED) MBT6429DW1T1 4.0 3.0 VCE = 5.0 V 2.0 TA = 125°C 25°C 1.0 −55 °C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 1.0 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 RθVBE, BASE−EMITTER TEMPERATURE COEFFICIENT (mV/ °C) −0.4 TJ = 25°C V, VOLTAGE (VOLTS) 0.8 0.6 VBE @ VCE = 5.0 V 0.4 0.2 −0.8 −1.2 TJ = 25°C to 125°C −1.6 −2.0 −55 °C to 25°C VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 −2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 8.0 C, CAPACITANCE (pF) 6.0 TJ = 25°C Cob 4.0 3.0 Ceb Cib Ccb 2.0 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 10. Temperature Coefficients 50 100 f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) Figure 9. “On” Voltages 20 Figure 11. Capacitance 500 300 200 100 VCE = 5.0 V TJ = 25°C 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 12. Current−Gain − Bandwidth Product http://onsemi.com 4 MBT6429DW1T1 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE 02U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. A G 6 5 DIM A B C D G H J K N S 4 −B− S 1 2 3 D 6 PL 0.2 (0.008) M B INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 M N J C H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches SC−88/SC70−6/SOT−363 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 MBT6429DW1T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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