MMBTA06WT1 Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model − 4 kV ESD Rating: Machine Model − 400 V http://onsemi.com Features • Pb−Free Package May be Available. The G−Suffix Denotes a COLLECTOR 3 Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Base Voltage VCBO 80 Vdc Emitter−Base Voltage VEBO 4.0 Vdc IC 500 mAdc Symbol Max Unit PD 150 mW RJA 833 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 2 EMITTER 3 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 2 SC−70 CASE 419 STYLE 3 MARKING DIAGRAM GM D GM = Specific Device Code D = Date Code ORDERING INFORMATION Device MMBTA06WT1 MMBTA06WT1G Package Shipping† SC−70 3000/Tape & Reel SC−70 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2003 December, 2003 − Rev. 1 1 Publication Order Number: MMBTA06WT1/D MMBTA06WT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 80 − Vdc Emitter−Base Breakdown Voltage (IE = 100 Adc, IC = 0) V(BR)EBO 4.0 − Vdc Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICES − 0.1 Adc Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO − 0.1 100 100 − − OFF CHARACTERISTICS Adc ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) − 0.25 Vdc Base−Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) VBE(on) − 1.2 Vdc fT 100 − MHz SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN−ON TIME VCC −1.0 V 5.0 s 100 VCC +VBB +40 V RL +40 V 100 OUTPUT +10 V Vin 0 TURN−OFF TIME tr = 3.0 ns OUTPUT RB Vin * CS 6.0 pF 5.0 F RL RB * CS 6.0 pF 5.0 F 100 100 5.0 s tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 300 VCE = 2.0 V TJ = 25°C 40 100 70 Cibo 20 10 8.0 50 Cobo 6.0 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 4.0 0.1 200 100 70 50 10 20 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 5.0 7.0 10 tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 100 100 s 300 1.0 s TC = 25°C 200 TA = 25°C 100 70 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 30 20 10 1.0 500 50 1.0 ms 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 4. Switching Time Figure 5. Active−Region Safe Operating Area 400 1.0 TJ = 125°C VCE = 1.0 V TJ = 25°C 0.8 200 V, VOLTAGE (VOLTS) h FE , DC CURRENT GAIN 5.0 1.0 k 700 500 tf 25°C −55°C 100 80 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 60 40 0.5 2.0 Figure 3. Capacitance 200 10 1.0 Figure 2. Current−Gain — Bandwidth Product ts 30 0.5 VR, REVERSE VOLTAGE (VOLTS) 300 20 0.2 IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 t, TIME (ns) TJ = 25°C 60 C, CAPACITANCE (pF) 200 80 I C , COLLECTOR CURRENT (mA) f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) MMBTA06WT1 VCE(sat) @ IC/IB = 10 1.0 2.0 3.0 5.0 10 20 30 50 100 0 0.5 200 300 500 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain Figure 7. “ON” Voltages http://onsemi.com 3 200 500 1.0 −0.8 R VB , TEMPERATURE COEFFICIENT (mV/° C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) MMBTA06WT1 TJ = 25°C 0.8 IC = 250 mA IC = 100 mA IC = 50 mA −1.2 IC = 500 mA 0.6 −1.6 0.2 0 RVB for VBE −2.0 0.4 IC = 10 mA 0.05 0.1 −2.4 0.2 0.5 1.0 2.0 5.0 10 20 −2.8 0.5 50 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Collector Saturation Region Figure 9. Base−Emitter Temperature Coefficient http://onsemi.com 4 500 MMBTA06WT1 PACKAGE DIMENSIONS SC−70/SOT−323 CASE 419−04 ISSUE L A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 DIM A B C D G H J K L N S D G C 0.05 (0.002) J N STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR K H SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches Figure 10. SC−70/SOT−323 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 MMBTA06WT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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