DIODES BYT40Y

BYT40Y
1.0A HIGH VOLTAGE GLASS BODY RECTIFIER
Features
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Hermetically Sealed Glass Body Construction
High Voltage to 1600V with Low Leakage
Surge Overload Rating to 25A Peak
A
A
B
C
Mechanical Data
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D
Case: DOT-30B, Glass
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.50 grams (approx.)
DOT-30B
Dim
Min
A
26.0
Max
¾
B
¾
4.2
C
¾
0.82
D
¾
3.0
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic
@ Tj = 25°C unless otherwise specified
Symbol
BYT40Y
Unit
VRRM
VRWM
VR
1600
V
VR(RMS)
1130
V
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
25
A
Forward Voltage
VFM
1.3
V
IRM
5.0
150
mA
trr
3.0
ms
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Peak Reverse Leakage Current
at Rated DC Blocking Voltage
@ TA = 40°C
@ IF = 1.0A
@ Tj = 25°C
@ Tj = 150°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
Cj
6.0
pF
RqJA
60
K/W
Tj, TSTG
-55 to +150
°C
1. Valid provided that leads are kept at ambient temperature at a distance of 10mm from the case.
2. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See Figure 5.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30032 Rev. B-5
1 of 2
BYT40Y
10
IF, INSTANTANEOUS FWD CURRENT (A)
IO, AVERAGE RECTIFIED CURRENT (A)
1.2
1.0
0.8
0.6
0.4
0.2
0
1
0.01
0.001
0
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
1000
14
Cj, JUNCTION CAPACITANCE (pF)
IR, REVERSE CURRENT (µA)
Tj = 25°C
0.1
100
10
1
f = 1.0MHz
Tj = 25°C
12
10
8
6
4
2
0.1
VR = VRRM
0
25
50
75
100
125
0
150
0.1
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 Typical Reverse Characteristics
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
50Ω NI (Non-inductive)
(-)
10Ω NI
Device
Under
Test
(+)
+0.5A
(-)
0A
Pulse
Generator
(Note 2)
50V DC
Approx
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
DS30032 Rev. B-5
2 of 2
BYT40Y