MCR106-6, MCR106-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability of operation is important. • Glass-Passivated Surface for Reliability and Uniformity • Power Rated at Economical Prices • Practical Level Triggering and Holding Characteristics • Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Device Marking: Device Type, e.g., MCR106–6, Date Code http://onsemi.com SCRs 4 AMPERES RMS 400 thru 600 VOLTS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) G Rating Symbol Peak Repetitive Off–State Voltage(1) (TJ = –40 to 110°C, Sine Wave 50 to 60 Hz, Gate Open) MCR106–6 MCR106–8 VDRM, VRRM On-State RMS Current (TC = 93°C) (180° Conduction Angles) IT(RMS) 4.0 Amps Average On–State Current (180° Conduction Angles; TC = 93°C) IT(AV) 2.55 Amps Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) ITSM 25 Amps I2t 2.6 A2s PGM 0.5 Watt PG(AV) 0.1 Watt Forward Peak Gate Current (TC = 93°C, Pulse Width IGM 0.2 Peak Reverse Gate Voltage (TC = 93°C, Pulse Width VRGM 6.0 Volts TJ –40 to +110 °C Tstg –40 to +150 °C — 6.0 in. lb. Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (TC = 93°C, Pulse Width v 1.0 µs) Forward Average Gate Power (TC = 93°C, t = 8.3 ms) v 1.0 µs) v 1.0 µs) Operating Junction Temperature Range Storage Temperature Range Mounting Torque(2) Value Unit May, 2000 – Rev. 3 K Volts 400 600 Amp 3 1 2 1 TO–225AA (formerly TO–126) CASE 077 STYLE 2 PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate ORDERING INFORMATION Device (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) Torque rating applies with use of compression washer (B52200-F006 or equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. (See AN209B). For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C. For optimum results, an activated flux (oxide removing) is recommended. Semiconductor Components Industries, LLC, 2000 A Package Shipping MCR106–6 TO225AA 500/Box MCR106–8 TO225AA 500/Box Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MCR106/D MCR106–6, MCR106–8 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 3.0 °C/W Thermal Resistance, Junction to Ambient RθJA 75 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit — — — — 10 200 µA µA — — 2.0 Volts — — — — 200 500 OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; RGK = 1000 Ohms) IDRM, IRRM TJ = 25°C TJ = 110°C ON CHARACTERISTICS Peak Forward On–State Voltage(1) (ITM = 4 A Peak) VTM Gate Trigger Current (Continuous dc)(2) (VAK = 7 Vdc, RL = 100 Ohms) (TC = –40°C) IGT Gate Trigger Voltage (Continuous dc)(2) (VAK = 7 Vdc, RL = 100 Ohms) Gate Non-Trigger Voltage(2) (VAK = 12 Vdc, RL = 100 Ohms, TJ = 110°C) VGT — — 1.0 Volts VGD 0.2 — — Volts IH — — 5.0 mA dv/dt — 10 — V/µs Holding Current (VAK = 7 Vdc, Initiating Current = 200 mA, Gate Open) µA DYNAMIC CHARACTERISTICS Critical Rate–of–Rise of Off–State Voltage (TJ = 110°C) (1) Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. (2) RGK current is not included in measurement. http://onsemi.com 2 MCR106–6, MCR106–8 Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM IDRM Peak Repetitive Off State Forward Voltage Anode + VTM on state Peak Forward Blocking Current VRRM IRRM Peak Repetitive Off State Reverse Voltage VTM IH Peak On State Voltage IH IRRM at VRRM Peak Reverse Blocking Current Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode – 110 110 106 102 0 98 α f = 60 Hz π 94 90 α = 30° dc 60° 90° 120° 180° 86 82 TA , MAXIMUM ALLOWABLE AMBIENTTEMPERATURE ( °C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) CURRENT DERATING 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 IT(AV), AVERAGE FORWARD CURRENT (AMP) 3.6 4.0 90 0 70 α π f = 60 Hz 50 α = 30° 30 0 Figure 1. Maximum Case Temperature 0.1 60° 90° 180° dc 0.2 0.3 0.4 0.5 0.6 0.7 IT(AV), AVERAGE FORWARD CURRENT (AMP) Figure 2. Maximum Ambient Temperature http://onsemi.com 3 0.8 MCR106–6, MCR106–8 PACKAGE DIMENSIONS TO–225AA (formerly TO–126) CASE 077–09 ISSUE W –B– U F Q –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 ––– MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ––– STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE M ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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