ONSEMI BUS50

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by BUS50/D
SEMICONDUCTOR TECHNICAL DATA
The BUS50 transistor is designed for low voltage, high–speed, power switching in
inductive circuits where fall time is critical. It is particularly suited for battery
switchmode applications such as:
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•
•
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70 AMPERES
NPN SILICON
POWER TRANSISTOR
125 VOLTS (BVCEO)
350 WATTS
200 V (BVCES)
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Fast Turn–Off Times
300 ns Inductive Fall Time – 25_C (Typ)
Operating Temperature Range –65 to + 200_C
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x
CASE 197A–05
TO–204AE
MAXIMUM RATINGS
Rating
Symbol
BUS50
Unit
Collector–Emitter Voltage
VCEO(sus)
125
Vdc
Collector–Emitter Voltage
VCEV
200
Vdc
Emitter Base Voltage
VEB
7
Vdc
Collector Current — Continuous
— Peak (1)
— Overload
IC
ICM
IoI
70
140
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
20
Adc
Total Power Dissipation — TC = 25°C
— TC = 100°C
Derate above 25_C
PD
350
200
2
Watts
TJ, Tstg
– 65 to + 200
_C
Symbol
Max
Unit
RθJC
0.5
_C/W
TL
275
_C
Operating and Storage Junction
Temperature Range
W/_C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature
for Soldering Purposes:
1/8″ from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
SWITCHMODE is a trademark of Motorola, Inc.
REV 7
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BUS50
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v
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS1
Collector–Emitter Sustaining Voltage
(IC = 200 mA, IB = 0, L = 25 mH)
VCEO(sus)
Vdc
125
Collector Cutoff Current at Reverse Bias
(VCE = 200 V, VBE = –1.5 V)
(VCE = 200 V, VBE = –1.5 V, TC = 125_C)
ICEX
Collector–Emitter Cutoff Current
(VCE = 125 V)
ICEO
Emitter Cutoff Current
(VEB = 7 V)
IEBO
mAdc
0.2
2
mAdc
1
mAdc
0.2
ON CHARACTERISTICS1
DC Current Gain
(IC = 5 A, VCE = 4 V)
(IC = 50 A, VCE = 4 V)
hFE
20
15
Collector–Emitter Saturation Voltage
(IC = 35 A, IB = 2 A)
(IC = 70 A, IB = 7 A)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 35 A, IB = 2 A)
(IC = 70 A, IB = 7 A)
VBE(sat)
Vdc
1
1.2
Vdc
1.8
2
SWITCHING CHARACTERISTICS (Resistive Load) ton and (Inductive Load) tsv, tfi
Turn–On Time
Storage Time
IC = 70 A, IB1 = 7 A VBE(off) = – 5 V
(VCC = 125 V)
Fall Time
1 Pulse Test: Pulse Width
2
300 µs, Duty Cycle
ton
1.2
tsv
1.5
tfi
0.3
µs
2%.
Motorola Bipolar Power Transistor Device Data
BUS50
PACKAGE DIMENSIONS
A
N
C
–T–
E
D
K
2 PL
0.30 (0.012)
U
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
T Q
M
M
Y
M
–Y–
L
2
H
G
B
M
T Y
1
–Q–
0.25 (0.010)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.530 REF
0.990
1.050
0.250
0.335
0.057
0.063
0.060
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
0.760
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
38.86 REF
25.15
26.67
6.35
8.51
1.45
1.60
1.53
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
19.31
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 197A–05
TO–204AE (TO–3)
ISSUE J
Motorola Bipolar Power Transistor Device Data
3
BUS50
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4
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Motorola Bipolar Power Transistor Device Data
*BUS50/D*
BUS50/D