FAIRCHILD RMPA5251

RMPA5251
4.90–5.85 GHz InGaP HBT Linear Power Amplifier
General Description
• 2.5% EVM at 18.0dBm modulated power out
The RMPA5251 power amplifier is designed for high
performance WLAN applications in the 4.9 to 5.35 and 5.15
to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3
x 0.9 mm package with internal matching on both input and
output to 50Ω minimizes next level PCB space and allows
for simplified integration. The on-chip detector provides
power sensing capability while the logic control provides
power saving shutdown options. The PA’s low power
consumption and excellent linearity are achieved using our
InGaP Heterojunction Bipolar Transistor (HBT) technology.
• 3.3V single positive supply operation
• Adjustable bias current operation
• Two power saving shutdown options (bias and logic
control)
• Integrated power detector with >18dB dynamic range
• Low profile 16 pin 3 x 3 x 0.9 mm standard QFN leadless
package
• Internally matched to 50Ω
Device
• Minimal external components
Features
• Optimized for use in IEEE 802.11a
WLAN applications
• 4.9 to 5.85 GHz Operation
• 27dB small signal gain
• 26dBm output power @ 1dB compression
Electrical Characteristics1,3 802.11a OFDM
Modulation (with 176ms burst time, 100ms idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency10
Supply Voltage
Gain
Total Current @ 18dBm POUT
Total Current @ 19dBm POUT
EVM @ 18dBm POUT2
EVM @ 19dBm POUT2
Detector Output @ 19dBm POUT
Detector Threshold4
POUT Spectral Mask Compliance5, 6
Minimum
4.90
3.0
Typical
3.3
27
250
260
2.5
3.5
450
5.0
21.0
Maximum
5.35
3.6
Minimum
5.15
3.0
Typical
Maximum
5.35
3.6
Minimum
5.15
3.0
Typical
3.3
28
240
250
2.5
3.5
500
5.0
20.0
Maximum
5.85
3.6
Unit
GHz
V
dB
mA
mA
%
%
mV
dBm
dBm
Maximum
5.85
3.6
Unit
GHz
V
dB
mA
Electrical Characteristics1 Single Tone
Parameter
Frequency10
Supply Voltage
Gain7
Total Quiescent Current7, 11
Minimum
4.90
3.0
Typical
3.3
27
140–220
3.3
27.5
140–220
Notes:
1. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25°C, PA is constantly biased, 50Ω system.
2. Percentage includes system noise floor of EVM=0.8%.
3. Not measured 100% in production.
4. POUT measured at PIN corresponding to power detection threshold.
5. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6. PIN is adjusted to point where performance approaches spectral mask requirements.
7. 100% Production screened.
8. Bias Current is included in the total quiescent current.
9. VL is set to logic level for device off operation.
10. See Application information on Page 3.
11. See Data on Page 8.
©2004 Fairchild Semiconductor Corporation
RMPA5251 Rev. D
RMPA5251
October 2004
Parameter
Bias Current at pin VM8
P1dB Compression7
Current @ P1dB Comp7
Standby Current9
Shutdown Current (VM=0V)
Input Return Loss
Output Return Loss
Detector Output at P1dB Comp
Detector POUT Threshold3, 4
Minimum
Frequency
2nd Harmonic Output at P1dB
3rd Harmonic Output at P1dB
Logic Shutdown Control Pin (VL):
Device Off
Device On
Logic Current
Turn-on Time13
Turn-off Time
Spurious (Stability)14
Typical
16
26
425
1.9
<1.0
12
10
2
Maximum
Minimum
5.35
5.15
7.0
4.90
0.0
2.4
10
<1
<1
-65
Maximum
Unit
mA
dBm
mA
mA
µA
dB
dB
V
7.0
-30
-35
2.0
Typical
16
26
425
1.9
<1.0
16
10
2
dBm
GHz
dBc
dBc
5.85
-30
-35
0.8
2.0
0.0
2.4
100
<1
<1
-65
0.8
V
V
µA
µS
µS
dBc
Absolute Ratings15
Symbol
VC1, VC2
IC1–IC3
VM
VL
PIN
TCASE
TSTG
Parameter
Positive Supply Voltage
Supply Current
IC1
IC2
IC3
Voltage Mirror
Logic Voltage
RF Input Power
Case Operating Temperature
Storage Temperature
Value
4.0
Units
V
50
150
500
4
mA
mA
mA
V
5
10
-40 to +85
-55 to +150
V
dBm
°C
°C
Notes:
3. Not measured 100% in production.
4. POUT measured at PIN corresponding to power detection threshold.
5. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6. PIN is adjusted to point where performance approaches spectral mask requirements.
7. 100% Production screened.
8. Bias Current is included in the total quiescent current.
9. VL is set to logic level for device off operation.
10. See Application information on Page 3.
11. See Data on Page 8.
12. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25°C, PA is constantly biased, 50É∂ system
13. Measured from Device On signal turn on, (Logic High) to the point where RF POUT stabilizes to 0.5dB.
14. Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB.
15. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
©2004 Fairchild Semiconductor Corporation
RMPA5251 Rev. D
RMPA5251
Electrical Characteristics12 Single Tone (Continued)
N/C
1
P1
VM2
VC2
VC3
16
15
14
13
BIAS
CONTROL
12
DT2
11
DT1
10
RF OUT
9
N/C
VOLTAGE
DETECTOR
VM1
2
VC1
3
RF IN
4
OUTPUT
MATCH
INPUT
MATCH
5
6
7
8
N/C
N/C
VM3
N/C
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Description
N/C
VM1
VC1
RF IN
N/C
N/C
VM3
N/C
N/C
RF OUT
DT1 (Vdet)
DT2
VC3
VC2
VM2
P1 (Logic)
Application Information
The RMPA5251 can be optimized to work over 2 frequency ranges, 4.9 to 5.35 GHz (Low Band) and 5.15 to 5.85 GHz (High
Band).
Using the 2 external component configurations described on the next page, the RMPA5251 can be optimized to give the
best EVM, power and gain over a specified bandwidth.
The data on sheets 7–9 shows the performance when the evaluation board is configured for either low or high band
performance.
©2004 Fairchild Semiconductor Corporation
RMPA5251 Rev. D
RMPA5251
Functional Block Diagram
RMPA5251
Evaluation Board Schematic
5251
YWWX
Backside Ground
Note:
*C3 only used in Low Band Configuration
All Mirrors and VC connections can be separate
or connected to a common rail.
Evaluation Board Bill of Materials
RMPA5251 4.90 to 5.35 GHz Operation Eval Board BOM (Low Band)
No.
Ref
1 C1,C2
Value Unit Qty Size
Description
10
µF
2 0805 10µF Capacitor
2
3
C3
C4
1
100
pF
pF
1
1
0603 1pF Capacitor
0402 100pF Capacitor
4
R1,R2
10K
Ω
2
0402 10K Ω Resistor
5
6
7
L1,L2,L3
B1
J1,J2
10
nH
3
1
2
8
J3
9
A1
©2004 Fairchild Semiconductor Corporation
0402 10nH Inductor
Fixture Board
Jack End Launch
SMA
11
Right Angle
Single Header
1
Packaged MMIC
MFG
Murata
Part No.
Comments
GRM21BR60J106KE01D Decoupling
Capacitor
Murata
GRM39C0G010B100V
Murata
GRM1885C1H101JA01D Detector
Capacitor
IMS
RCI-0402-1002J
Detector
Resistor
Toko
LLV1005FB10NJ
RF Choke
Crown Circuits G657432
Johnson
142-0701-841
Components
Digikey
S1322-12-ND
Fairchild
RMPA5251
RMPA5251 Rev. D
No. Ref Value Unit Qty Size
Description
1 C1,C2
10
µF
2 0805 10 µF Capacitor
2
C4
100
pF
1
0402
3
4
5
6
7
R1,R2
L1,L3
L2
B1
J1,J2
10K
10
15
Ω
nH
nH
2
2
1
1
2
0402
0402
0402
8
J3
11
9
A1
1
MFG
Murata
Part No.
GRM21BR60J106K
Comments
Decoupling
Capacitor
100 pF Capacitor Murata
GRM1885C1H101JA01D Detector
Capacitor
10 KΩ Resistor
IMS
RCI-0402-1002J
Detector Resistor
10 nH Inductor
Toko
LLV1005FB10NJ
RF Choke
15 nH Inductor
Toko
LLV1005FB15NJ
RF Choke
Fixture Board
Crown Circuits G657432
Jack End Launch Johnson
142-0701-841
SMA
Components
Right Angle Single Digikey
S1322-12-ND
Header
Packaged MMIC
Fairchild
RMPA5251
Evaluation Board Layout
VL
C1
*
L2
C3 L3
R1
J1
C2
L1
C4
J2
R2
A1
Not Used
J3
= component
Actual Board Size = 2.0" x 1.5"
= Jumper/short connection
* VL is labeled P1 on Eval Board
Evaluation Board Operation
Recommended turn-on sequence:
1) Connect RF ports J1, J2 to RF test equipment.
2) Connect common ground terminal to the Ground (GND) pin on the board.
3) Connect logic control pin VL to positive supply.
4) Connect terminals VC1, VC2 and VC3 together and connect to positive supply (VC).
5) Connect terminals VM1, VM2 and VM3 together and connect to positive supply (VM).
6) Connect voltmeter to Detector Output, pin DT1.
7) Connect pin DT2 to ground.
8) Apply high voltage of +2.4V to logic control pin VL. (On)
9) Apply positive voltage of 3.3V to VC1, VC2 and VC3 (first, second and third stage collector).
10) Apply positive voltage of 3.3V to VM1, VM2 and VM3 (bias networks)2.
11) At this point, you should expect to observe the following positive currents flowing into the pins:
Pin
VL
VC (Total)
VM (Total)
©2004 Fairchild Semiconductor Corporation
Current
~150 µA
~184 mA
~16 mA
RMPA5251 Rev. D
RMPA5251
RMPA5251 5.15 to 5.85 GHz Operation Eval Board BOM (High Band)
Shut down current flow into the pins:
Pin
Current
VL
<1 nA
VC (total)
<1 nA
VM (total)
<1.9 mA
Recommended turn-off sequence:
Use reverse order described in the turn-on sequence above.
Note:
1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design.
2. VM may be adjusted from +2.9 to +3.3V to adjust bias current operation. See Typical Characteristics.
Package Outline
Dimensions in inches [mm]
5251
YWWX
Application Information
Precautions to Avoid Permanent Device Damage:
—Static Sensitivity: Follow ESD precautions to protect against ESD damage:
• A properly grounded static-dissipative surface on which to place devices.
• Static-dissipative floor or mat.
• A properly grounded conductive wrist strap for each person to wear while handling devices.
©2004 Fairchild Semiconductor Corporation
RMPA5251 Rev. D
RMPA5251
12) Apply input RF power to SMA connector pin RF IN. Currents on collector pins will vary depending on the input drive
level.
13) Vary positive voltage VL from +2.4V to +0.5V to shut down the amplifier or alter the power level.
RMPA5251
Typical Characteristics (802.11a)
RMPA5251 Comparison Low Band Vs. High Band
Total Measured EVM Vs. Frequency
Modulated Power Out =18 dBm 54 Mbps OFDM
VC=VM=3.3V, ICQ=184mA, IMQ=16mA
RMPA5251 Gain Vs. Modulated Power Out (Low and High Band)
QAM64 54 Mbps OFDM Modulation
VC=VM=3.3V, ICQ=184mA, IMQ=16mA, T=25 oC
5
32
30
Low Band Configuration
28
High Band Configuration
26
3
Gain (dB)
Total Measured EVM (%)
4
Low Band
Configuration
2
High Band Configuration
10 nH on VC2 Replaced with 15 nH
and 1 pF on VC2 removed
24
22
20
Low Band
High Band
18
1
16
Includes 0.8% System Level EVM
14
0
4.9
5
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
4.9
6
5
5.1
5.2
5.3
Frequency (GHz)
2
1.5
1
0.5
0
5.9
6
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
High Band Configuration
RMPA5251 Output Power for 3% Total Measured EVM 802.11a 54 Mbps
Modulation VM=VC=3.3 V, ICQ=184 mA, IMQ=16 mA (High Band Config)
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Total Channel Power (dBm)
Total Channel Power (dBm)
5.8
Modulated Power Out (dBm)
RMPA5251 Output Power for 3% Total Measured EVM 802.11a 54 Mbps
Modulation VM=VC=3.3 V, ICQ=184 mA, IMQ=16 mA (Low Band Config)
18dBm
Includes 0.8% System Level EVM
5.05
5.7
Includes 0.8% System Level EVM
4
Low Band Configuration
5
5.6
RMPA5251 Total Measured EVM QAM64 54 Mbps OFDM Modulation
VC=VM=3.3V, ICQ=184m A, IMQ=16m A, F=5.15- 5.85GHz, T=25oC
8
7.5
5.15 GHz
7
5.25 GHz
6.5
6
5.35 GHz
5.5
5.45 GHz
5
5.55 GHz
4.5
4
5.65 GHz
3.5
5.75 GHz
3
5.85 GHz
2.5
Modulated Power Out (dBm)
4.95
5.5
High Band Configuration
RMPA5251 Total Measured EVM QAM64 54 Mbps OFDM Modulation
VC=VM=3.3V, ICQ=184m A, IMQ=16m A, F=5.15- 5.35GHz, T=25oC
8
7.5
4.90 GHz
7
4.95 GHz
6.5
5.00 GHz
6
5.05 GHz
5.5
5
5.10 GHz
4.5
5.15 GHz
4
5.20 GHz
3.5
5.25 GHz
3
2.5
5.30 GHz
2
5.35 GHz
1.5
1
0.5
Includes 0.8% System Level EVM
0
4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Total Measured EVM (%)
Total Measured EVM (%)
Low Band Configuration
4.9
5.4
Frequency (GHz)
5.1
5.15
5.2
5.25
5.3
5.35
Frequency (GHz)
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
18dBm
Includes 0.8% System Level EVM
4.9
5
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
Frequency (GHz)
Low Band Configuration
High Band Configuration
RMPA5251 Spectral Plot Showing Compliance to 802.11a Spectral
Mask Requirements @ 21.0 dBm Modulated Output Power 54Mbps OFDM
Data, 16.7 MHz BW, 176µS Burst, 100µS Idle, Frequency = 5.25 GHz,
VC = VM = 3.3V, ICQ = 184 mA, IMQ = 16 mA, T = 25°C
RMPA5251 Spectral Plot Showing Compliance to 802.11a Spectral
Mask Requirements @ 20.0 dBm Modulated Output Power 54Mbps OFDM
Data, 16.7 MHz BW, 176µS Burst, 100µS Idle, Frequency = 5.5 GHz,
VC = VM = 3.3V, ICQ = 184 mA, IMQ = 16 mA, T = 25°C
©2004 Fairchild Semiconductor Corporation
RMPA5251 Rev. D
RMPA5251
Typical Characteristics (802.11a) (continued)
Low Band Configuration
RMPA5251 Detector Voltage 4.9 - 5.35 GHz OFDM
54 Mbps Modulation VC = VM = 3.3V, ICQ = 184mA,
IMQ = 16mA, T = 25°C Low Band Configuration
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
4.90 GHz
4.95 GHz
5.00 GHz
5.05 GHz
5.10 GHz
5.15 GHz
5.20 GHz
5.25 GHz
5.30 GHz
5.35 GHz
4
5
6
7
Detector Voltage (mV)
Detector Voltage (mV)
High Band Configuration
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Total Channel Power 16.7 MHz (dBm)
RMPA5251 Detector Voltage 5.15 - 5.85 GHz OFDM
54 Mbps Modulation VC = VM = 3.3V, ICQ = 184mA,
IMQ = 16mA, T = 25°C High Band Configuration
5.15 GHz
5.25 GHz
5.35 GHz
5.45 GHz
5.55 GHz
5.65 GHz
5.75 GHz
5.85 GHz
4
5
6
7
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Total Channel Power 16.7 MHz (dBm)
Low Band Configuration
RMPA5251 Performance vs. Change in Mirror Voltage (VM)*
29
160
140
120
230
Gain
28
220
27
210
26
200
190
25
24
180
Total Current
23
170
22
160
21
150
140
20
100
3
5
VM:
7
9
11
13
15
17
19
Modulated Output Power (dBm)
2.9V
3.0V
3.1V
3.2V
21
19
2.9
23
Total Current (mA)
180
Gain and Total Quiescent Current vs. Mirror Voltage (VM)
Frequency = 5.25 GHz, VC = 3.3V, T = 25°C, Low Band Configuration
240
30
Gain (dB)
Total Current (mA)
RMPA5251 Total Current vs. VM vs. Modulated Output
Power VC = 3.3V, Frequency = 5.25 GHz, T = 25°C, Low Band Configuration
280
VM
3.3V
260
3.2V
3.1V
240
3.0V
220
2.9V
200
3.0
3.1
3.2
Mirror Voltage, VM (V)
3.3
130
3.3V
*Total current can be varied by resetting the quiescent current
by means of adjusting the mirror voltage, VM.
Low Band Configuration
RMPA5251 Modulated Output Power (OFDM 54 Mbps)
at 2% and 3% EVM vs. Mirror Voltage vs. Frequency,
VC=3.3V, T=25°C
20
RMPA5251 Output Power for 2% EVM Increase for
VM = 2.9 to VM = 3.3V 802.11a 54 Mbps OFDM Modulation
RMPA5251 Output Power for 3% EVM Increase for
VM = 2.9 to VM = 3.3V 802.11a 54 Mbps OFDM Modulation
20
3.3V
3.2V
19
19
Modulated Output Power (dBm)
Modulated Output Power (dBm)
3.1V
18
17
3.3V
3.2V
16
3.1V
15
3.0V
18
3.0V
2.9V
17
16
15
Includes 0.8% System Level EVM
Includes 0.8% System Level EVM
2.9V
14
5.15
5.2
5.25
5.3
Frequency (GHz)
VM = 2.9 V Itotal = 142 mA
VM = 3.1 V Itotal = 170 mA
VM = 3.3 V Itotal = 200 mA
©2004 Fairchild Semiconductor Corporation
VM = 3.0 V Itotal = 155 mA
VM = 3.2 V Itotal = 185 mA
5.35
14
5.15
5.2
5.25
5.3
5.35
Frequency (GHz)
VM = 2.9 V Itotal = 142 mA
VM = 3.1 V Itotal = 170 mA
VM = 3.3 V Itotal = 200 mA
VM = 3.0 V Itotal = 155 mA
VM = 3.2 V Itotal = 185 mA
RMPA5251 Rev. D
Low Band Configuration
High Band Configuration
RMPA5251 S-Parameters vs. Frequency
VM = VC = 3.3V, IMQ = 16mA, ICQ = 184mA, High Band Configuration
0
30
24
S21
-6
21
S22
-8
18
-10
15
-12
12
-14
9
-16
6
-18
3
S11
-20
4.9
5.0
5.1
5.2
5.3 5.4 5.5 5.6
Frequency (GHz)
5.7
5.8
5.9
0
6.0
Low Band Configuration
18
-10
15
-14
6
-18
3
-20
4.9
28
5.2
5.3 5.4 5.5 5.6
Frequency (GHz)
5.7
5.8
5.9
6.0
27
26
Gain (dB)
Gain (dB)
5.1
RMPA5251 Typical Gain vs Single Tone Output Power
VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA,
5.2 - 5.8 GHz High Band Configuration
27
4.90 GHz
4.95 GHz
5.00 GHz
5.05 GHz
5.10 GHz
5.15 GHz
5.25 GHz
5.35 GHz
25
24
23
22
21
26
5.2 GHz
5.3 GHz
5.4 GHz
5.5 GHz
5.6 GHz
5.7 GHz
5.8 GHz
25
24
23
22
21
20
20
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Output Power (dBm)
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Output Power (dBm)
Low Band Configuration
High Band Configuration
RMPA5251 Typical Total Current vs. Single Tone Output Power
VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, 5.2 - 5.8 GHz
High Band Configuration
550
RMPA5251 Typical Total Current vs. Single Tone Output Power
VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA, 4.9 - 5.35 GHz
Low Band Configuration
550
4.90 GHz
4.95 GHz
5.00 GHz
5.05 GHz
5.10 GHz
5.15 GHz
5.25 GHz
5.35 GHz
500
450
Total Current (mA)
Total Current (mA)
0
5.0
High Band Configuration
29
250
200
400
350
300
5.2 GHz
5.3 GHz
5.4 GHz
5.5 GHz
5.6 GHz
5.7 GHz
5.8 GHz
250
200
150
150
100
9
S11
-16
28
300
12
-12
30
350
21
S22
-8
29
400
S21
-6
30
450
24
-4
RMPA5251 Typical Gain vs Single Tone Output Power
VC = VM = 3.3V, ICQ = 184mA, IMQ = 16mA,
4.9 - 5.35 GHz Low Band Configuration
500
27
-2
S21 Mag (dB)
27
-4
S11 and S22 Mag (dB)
-2
S21 Mag (dB)
S11 and S22 Mag (dB)
RMPA5251 S-Parameters vs. Frequency
VM = VC = 3.3V, IMQ = 16mA, ICQ = 184mA, Low Band Configuration
30
0
100
6 7 8 9 10 1112 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Output Power (dBm)
6 7 8 9 10 1112 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Output Power (dBm)
High Band Configuration
RMPA5251 Performance vs. Change in Collector Voltage (VC)
RMPA5251 Single Tone Gain vs. VC vs. Frequency
VM = 3.3V T=25°C High Band Configuration
RMPA5251 Single Tone P1dB vs. VC vs. Frequency
VM = 3.3V T=25°C High Band Configuration
35
Gain (dB)
25
20
15
VC
10
5
3.0V
3.3V
3.6V
0
4.85 4.95 5.05 5.15 5.25 5.35 5.45 5.55 5.65 5.75 5.85 5.95 6.05
Frequency (GHz)
©2004 Fairchild Semiconductor Corporation
P1dB (dBm)
30
28
27
26
25
24
23
22
21
20
VC
19
3.0V
18
3.3V
17
3.6V
16
15
4.85 4.95 5.05 5.15 5.25 5.35 5.45 5.55 5.65 5.75 5.85 5.95 6.05
Frequency (GHz)
RMPA5251 Rev. D
RMPA5251
Typical Characteristics (Single Tone) (continued)
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Definition
Advance Information
Formative or
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This datasheet contains the design specifications for
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Rev. I13