RMPA2059 WCDMA PowerEdge™ Power Amplifier Module Features General Description • 40% CDMA efficiency at +27dBm average output power • Single positive-supply operation and low power and shutdown modes • Meets UTMS/WCDMA and HSDPA performance requirements • Compact Lead-free compliant LCC package - 4.0 x 4.0 x 1.5 mm • Industry standard pinout • Internally matched to 50Ω and DC blocked RF input/ output The RMPA2059 power amplifier module (PAM) is designed for WCDMA applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process. Device Functional Block Diagram (Top View) MMIC Vcc1 1 RF IN 2 GND 3 Vmode 4 Vref 5 10 Vcc2 INPUT MATCH 9 GND OUTPUT MATCH BIAS/MODE SWITCH 8 RF OUT 7 GND 6 GND 11 (paddle ground on package bottom) ©2005 Fairchild Semiconductor Corporation RMPA2059 Rev. F 1 www.fairchildsemi.com RMPA2059 WCDMA Power EdgeTM Power Amplifier Module May 2005 Symbol Parameter Vcc1, Vcc2 Supply Voltages Vref Reference Voltage Min Max Units 0 5.0 V 2.7 5.0 V Vmode Power Control Voltage 0 3.0 V Pin RF Input Power – +5 dBm TSTG Storage Temperature -55 +150 °C Note: 1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics1 Symbol f Parameter Operating Frequency Min Typ 1920 Max Units 1980 MHz Comments WCDMA Operation Gp Po PAEd Itot Power Gain Linear Output Power 26.5 dB Po=+27dBm; Vmode=0V 24 dB Po=+16dBm; Vmode≥2.0V 27 dBm Vmode=0V 16 dBm Vmode≥2.0V PAEd (digital) @ +27dBm 40 % PAEd (digital) @ +16dBm 9.5 % Vmode≥2.0V PAEd (digital) @ +16dBm 20 % Vmode≥2.0V, Vcc=1.4V High Power Total Current 365 mA Po=+27dBm, Vmode=0V Low Power Total Current 120 mA Adjacent Channel Leakage Ratio ACLR1 ACLR2 Vmode=0V Po=+16dBm, Vmode≥2.0V WCDMA Modulation 3GPP 3.2 03-00 DPCCH+1 DCDCH ±5.0MHz Offset ±10.0MHz Offset -40 dBc Po=+27 dBm; Vmode=0V -44 dBc Po=+16 dBm; Vmode≥2.0V -55 dBc Po=+27 dBm; Vmode=0V -63 dBc Po=+16 dBm; Vmode≥2.0V General Characteristics VSWR NF Input Impedance 2.0:1 Noise Figure 3 dB Rx No Receive Band Noise Power 2fo-5fo Harmonic Suppression3 -30 dBc Spurious Outputs2,3 -60 dBc Ruggedness w/ Load Mismatch3 10:1 S Tc Case Operating Temperature -139 -30 dBm/Hz Po<+27dBm; 2110 to 2170MHz Po≤+27 dBm Load VSWR ≤ 5.0:1 No permanent damage 85 °C DC Characteristics Iccq Quiescent Current 50 Iref Reference Current 4 8 mA Po≤+27dBm Shutdown Leakage Current 1 5 µA No applied RF signal Icc(off) mA Vmode≥2.0V Notes: 1: All parameters met at Tc = +25°C, Vcc = +3.4V, f = 1950MHz, and load VSWR ≤ 1.2:1. 2: All phase angles. 3: Guaranteed by design. ©2005 Fairchild Semiconductor Corporation RMPA2059 Rev. F 2 www.fairchildsemi.com RMPA2059 WCDMA Power EdgeTM Power Amplifier Module Absolute Ratings1 Symbol Parameter f Min Operating Frequency Vcc1, Vcc2 Vref Vmode Pout Typ 1920 Units 1980 MHz Supply Voltage 3.0 3.4 4.2 V Reference Voltage Operating Shutdown 2.7 0 2.85 3.1 0.5 V V Bias Control Voltage Low-Power High-Power 1.8 0 2.0 3.0 0.5 V V +27 +16 dBm dBm +85 °C Linear Output Power High-Power Low-Power Tc Max Case Operating Temperature -30 Note: 1: RF input power for WCDMA Pout = +27dBm. DC Turn On Sequence: 1. Vcc1 = Vcc2 = 3.4V (typical) 2. Vref = 2.85V (typical) 3. High-Power: Vmode = 0V (Pout > 16dBm) Low-Power: Vmode = 2.0V (Pout < 16dBm) RMPA2059 4x4 WCDMA PAM RMPA2059 4x4 WCDMA PAM Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=27dBm Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=27dBm 32.0 31.0 30.0 29.0 28.0 27.0 26.0 25.0 24.0 23.0 22.0 1920 PAE (%) Gain (dB) Performance Data 1950 1980 45.0 44.0 43.0 42.0 41.0 40.0 39.0 38.0 37.0 36.0 35.0 1920 1950 1980 Frequency (MHz ) RMPA2059 4x4 WCDMA PAM RMPA2059 4x4 WCDMA PAM Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=27dBm Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=27dBm -30.0 -32.0 -34.0 -36.0 -38.0 -40.0 -42.0 -44.0 -46.0 -48.0 -50.0 1920 ACLR2 (dBc) ACLR1 (dBc) Frequency (MHz ) 1950 1980 Frequency (MHz ) ©2005 Fairchild Semiconductor Corporation RMPA2059 Rev. F -40.0 -42.0 -44.0 -46.0 -48.0 -50.0 -52.0 -54.0 -56.0 -58.0 -60.0 1920 1950 1980 Frequency (MHz) 3 www.fairchildsemi.com RMPA2059 WCDMA Power EdgeTM Power Amplifier Module Recommended Operating Conditions1 1 5 6 3 6 5 2 Materials List Qty Item No. 1 1 Part Number Description G657553-1 V2 PC Board Vendor Fairchild 2 2 #142-0701-841 SMA Connector Johnson 3 3 #2340-5211TN Terminals 3M Ref 4 G657637 Assembly, RMPA2059 Fairchild 3 5 GRM39XR102KS0V 1000pF Capacitor (0603) Murata 3 5 (Alt) ECJ-1V81H102K 1000pF Capacitor (0603) Panasonic 2 6 C3216X5R1A335M 3.3µF Capacitor (1206) TDK 1 7 GRM39YSV104Z16V 0.1µF Capacitor (0603) Murata 1 7 (Alt) ECJ-1VB1CID4K 0.1µF Capacitor (0603) Panasonic A/R 8 SN63 Solder Paste Indium Corp. A/R 9 SN96 Solder Paste Indium Corp Evaluation Board Schematic 3.3 µF RF IN VMODE 1000 pF ©2005 Fairchild Semiconductor Corporation 1000 pF 1 VCC1 SMA1 RMPA2059 Rev. F 1000 pF 50 Ohm TRL VREF 10 2 4 5 2059 YWWXX 8 3.3 µF VCC2 50 Ohm TRL SMA2 RF OUT 3, 6, 7, 9 11 0.1 µF (PACKAGE BASE) 4 www.fairchildsemi.com RMPA2059 WCDMA Power EdgeTM Power Amplifier Module Evaluation Board Layout I/O 1 INDICATOR TOP VIEW (4.00mm +.100 –.050 ) SQUARE 1 10 2 9 3 2059 8 4 YWWXX 7 Y W 2059 WX X 6 5 1.60mm MAX. FRONT VIEW .25mm TYP. 3.50mm TYP. See Detail A .40mm .10mm .30mm TYP. .10mm .85mm TYP. 3.65mm 11 .40mm .45mm 2 1 1.08mm .18mm 1.84mm DETAIL A. TYP. BOTTOM VIEW Signal Descriptions Pin # Signal Name Description 1 Vcc1 Reference Voltage 2 RF In High Power/Low Power Mode Control 3 GND Ground 4 Vmode RF Input Signal 5 Vref Supply Voltage to Input Stage 6 GND Ground 7 GND Ground 8 RF Out RF Output Signal 9 GND Ground 10 Vcc2 Supply Voltage to Output Stage 11 GND Paddle Ground ©2005 Fairchild Semiconductor Corporation RMPA2059 Rev. F 5 www.fairchildsemi.com RMPA2059 WCDMA Power EdgeTM Power Amplifier Module Package Outline CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: • Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. • Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. • Static Sensitivity: Follow ESD precautions to protect against ESD damage: – A properly grounded static-dissipative surface on which to place devices. – Static-dissipative floor or mat. – A properly grounded conductive wrist strap for each person to wear while handling devices. • General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. • Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. • Dry-bake devices at 125°C for 24 hours minimum. Note: The shipping trays cannot withstand 125°C baking temperature. • Assemble the dry-baked devices within 7 days of removal from the oven. • During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C • If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. ©2005 Fairchild Semiconductor Corporation RMPA2059 Rev. F 6 www.fairchildsemi.com RMPA2059 WCDMA Power EdgeTM Power Amplifier Module Applications Information TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 ©2005 Fairchild Semiconductor Corporation RMPA2059 Rev. F 7 www.fairchildsemi.com