BC307B Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 Vdc Collector − Base Voltage VCBO −50 Vdc VEBO −5.0 Vdc Collector Current − Continuous IC −100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 8.0 W mW/°C TJ, Tstg −55 to +150 °C Emitter − Base Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 357 °C/W Thermal Resistance, Junction−to−Case RqJC 125 °C/W 2 BASE 3 EMITTER 1 TO−92 CASE 29 STYLE 17 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BC30 7BRL1 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BC307BRL1G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 4 1 Package Shipping† TO−92 (Pb−Free) 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC307/D BC307B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = −2.0 mAdc, IB = 0) V(BR)CEO −45 − − Vdc Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc − − −0.2 −0.2 −15 −4.0 nAdc mA − 200 − 150 290 180 − 460 − − − − −0.10 −0.30 −0.25 −0.3 −0.6 − − − −0.7 −1.0 − − OFF CHARACTERISTICS Collector−Emitter Leakage Current (VCES = −50 V, VBE = 0) (VCES = −50 V, VBE = 0) TA = 125°C ICES ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −2.0 mAdc, VCE = −5.0 Vdc) (IC = −100 mAdc, VCE = −5.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) (IC = −10 mAdc, IB = see Note 1) (IC = −100 mAdc, IB = −5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) (IC = −100 mAdc, IB = −5.0 mAdc) VBE(sat) Base−Emitter On Voltage (IC = −2.0 mAdc, VCE = −5.0 Vdc) VBE(on) −0.55 −0.62 −0.7 Vdc fT − 280 − MHz Ccbo − − 6.0 pF NF − 2.0 10 dB − Vdc Vdc DYNAMIC CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz) Common Base Capacitance (VCB = −10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz) 1. IC = −10 mAdc on the constant base current characteristic, which yields the point IC = −11 mAdc, VCE = −1.0 V. http://onsemi.com 2 BC307B TYPICAL CHARACTERISTICS −1.0 VCE = −10 V TA = 25°C 1.5 −0.9 1.0 0.7 0.5 −0.7 VBE(on) @ VCE = −10 V −0.6 −0.5 −0.4 −0.3 VCE(sat) @ IC/IB = 10 −0.1 0 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain −0.5 −1.0 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mAdc) −50 −100 Figure 2. “Saturation” and “On” Voltages 10 400 300 Cib 7.0 200 C, CAPACITANCE (pF) f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) VBE(sat) @ IC/IB = 10 −0.2 0.3 0.2 −0.2 VCE = −10 V TA = 25°C 150 100 80 60 5.0 TA = 25°C 3.0 Cob 2.0 40 30 20 −0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 IC, COLLECTOR CURRENT (mAdc) 1.0 −0.4 −0.6 −50 Figure 3. Current−Gain — Bandwidth Product 0.3 r b′, BASE SPREADING RESISTANCE (OHMS) 0.5 VCE = −10 V f = 1.0 kHz TA = 25°C 0.1 0.05 0.03 0.01 −0.1 −0.2 −0.5 −1.0 −2.0 IC, COLLECTOR CURRENT (mAdc) −5.0 −1.0 −2.0 −4.0 −6.0 −10 VR, REVERSE VOLTAGE (VOLTS) −20 −30 −40 Figure 4. Capacitances 1.0 hob, OUTPUT ADMITTANCE (OHMS) TA = 25°C −0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 150 140 130 120 110 100 −0.1 −10 VCE = −10 V f = 1.0 kHz TA = 25°C Figure 5. Output Admittance −0.2 −0.3 −0.5 −1.0 −2.0 −3.0 IC, COLLECTOR CURRENT (mAdc) −5.0 Figure 6. Base Spreading Resistance http://onsemi.com 3 −10 BC307B PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A R NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B P T SEATING PLANE K D X X G J V 1 C SECTION X−X N DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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