ONSEMI BF721T1G

BF721T1G
PNP Silicon Transistor
Features
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector -- Emitter Voltage
VCEO
--300
Vdc
Collector -- Base Voltage
VCBO
--300
Vdc
Collector -- Emitter Voltage
VCER
--300
Vdc
Emitter -- Base Voltage
VEBO
--5.0
Vdc
Collector Current
IC
--50
mAdc
Total Power Dissipation up to TA = 25C
(Note 1)
PD
1.5
W
Storage Temperature Range
Tstg
--65 to +150
C
Junction Temperature
TJ
150
C
Symbol
Max
Unit
RθJA
83.3
C/W
PNP SILICON TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction--to--Ambient (Note 1)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
MARKING
DIAGRAM
1
AYW
DF G
G
SOT--223 (TO--261)
CASE 318E
STYLE 1
1
A
= Assembly Location
Y
= Year
W = Work Week
DF = Device Code
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BF721T1G
Package
Shipping†
SOT--223
(Pb--Free)
1000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
September, 2010 -- Rev. 9
1
Publication Order Number:
BF721T1/D
BF721T1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(IC = --1.0 mAdc, IB = 0)
V(BR)CEO
-- 300
--
Vdc
Collector-Base Breakdown Voltage
(IC = --100 mAdc, IE = 0)
V(BR)CBO
--300
--
Vdc
Collector-Emitter Breakdown Voltage
(IC = --100 mAdc, RBE = 2.7 kΩ)
V(BR)CER
--300
--
Vdc
Emitter-Base Breakdown Voltage
(IE = --10 mAdc, IC = 0)
V(BR)EBO
-- 5.0
--
Vdc
Collector-Base Cutoff Current
(VCB = -- 200 Vdc, IE = 0)
ICBO
--
--10
nAdc
Collector--Emitter Cutoff Current
(VCE = -- 250 Vdc, RBE = 2.7 kΩ)
(VCE = -- 200 Vdc, RBE = 2.7 kΩ TJ = 150C)
ICER
---
--50
--10
nAdc
mAdc
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(IC = --25 mAdc, VCE = --20 Vdc)
hFE
50
--
--
Collector-Emitter Saturation Voltage
(IC = -- 30 mAdc, IB = -- 5.0 mAdc)
VCE(sat)
--
-- 0.8
Vdc
fT
60
--
MHz
Cre
--
1.6
pF
DYNAMIC CHARACTERISTICS
Current-Gain -- Bandwidth Product
(VCE = -- 10 Vdc, IC = --10 mAdc, f = 35 MHz)
Feedback Capacitance
(VCE = -- 30 Vdc, IC = 0, f = 1.0 MHz)
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2
BF721T1G
300
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125C
250
200
25C
150
--55C
100
50
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Cib @ 1MHz
f T, CURRENT--GAIN — BANDWIDTH (MHz)
C, CAPACITANCE (pF)
100
10
Ccb @ 1MHz
1.0
0.1
0.1
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
150
130
110
90
70
50
30
10
1000
TJ = 25C
VCE = 20 Vdc
F = 20 MHz
1
Figure 2. Capacitance
3
5
11
13
15
7
9
IC, COLLECTOR CURRENT (mA)
17
19
21
Figure 3. Current--Gain — Bandwidth
1.4
V, VOLTAGE (VOLTS)
1.2
VCE(sat) @ 25C, IC/IB = 10
VCE(sat) @ 125C, IC/IB = 10
VCE(sat) @ --55C, IC/IB = 10
VBE(sat) @ 25C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125C, IC/IB = 10
VBE(sat) @ --55C, IC/IB = 10
VBE(on) @ 25C, VCE = 10 V
VBE(on) @ 125C, VCE = 10 V
VBE(on) @ --55C, VCE = 10 V
0.6
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. “ON” Voltages
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3
BF721T1G
PACKAGE DIMENSIONS
SOT--223 (TO--261)
CASE 318E--04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
1
2
3
b
e1
e
A1
C
θ
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0
θ
L
STYLE 1:
PIN 1.
2.
3.
4.
L1
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
----------1.75
2.00
7.00
7.30
10
--
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
-----0.069
0.276
--
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
-----0.078
0.287
10
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Fax: 303--675--2176 or 800--344--3867 Toll Free USA/Canada
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USA/Canada
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Phone: 421 33 790 2910
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Phone: 81--3--5773--3850
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ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BF721T1/D