BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B Mechanical Data · · · · · · · · C G TOP VIEW S Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G D E G Case: SOT-23, Molded Plastic Case Material - UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K38 Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) H K J M L Drain Gate 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0° 8° All Dimensions in mm Source Maximum Ratings @ TA = 25°C unless otherwise specified Symbol BSS138 Units Drain-Source Voltage Characteristic VDSS 50 V Drain-Gate Voltage RGS £ 20KW VDGR 50 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current Continuous ID 200 mA Pd Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 50 75 ¾ V VGS = 0V, ID = 250mA Zero Gate Voltage Drain Current IDSS ¾ ¾ 0.5 µA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS ¾ ¾ ±100 nA VGS = ±20V, VDS = 0V 1.2 1.5 V VDS = VGS, ID =-250mA VGS = 10V, ID = 0.22A OFF CHARACTERISTICS (Note 2) ON CHARACTERISTICS (Note 2) VGS(th) 0.5 RDS (ON) ¾ 1.4 3.5 W gFS 100 ¾ ¾ mS Input Capacitance Ciss ¾ ¾ 50 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 8.0 pF Turn-On Delay Time tD(ON) ¾ ¾ 20 ns Turn-Off Delay Time tD(OFF) ¾ ¾ 20 ns Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS =25V, ID = 0.2A, f = 1.0KHz DYNAMIC CHARACTERISTICS VDS = 10V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Notes: VDD = 30V, ID = 0.2A, RGEN = 50W 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to miminize self-heating effect. DS30144 Rev. 6 - 2 1 of 5 www.diodes.com BSS138 Ordering Information Notes: (Note 3) Device Packaging Shipping BSS138-7 SOT-23 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K38 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K38 Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 0.6 VGS = 3.5V ID, DRAIN-SOURCE CURRENT (A) Tj = 25°C 0.5 VGS = 3.25V 0.4 VGS = 3.0V 0.3 VGS = 2.75V 0.2 VGS = 2.5V 0.1 0 0 2 1 3 5 4 6 7 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage ID, DRAIN-SOURCE CURRENT (A) 0.8 VDS = 1V 0.7 -55°C 0.6 25°C 0.5 150°C 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics DS30144 Rev. 6 - 2 2 of 5 www.diodes.com BSS138 RDS(ON), NORMALIZED DRAIN-SOURCE ON RESISTANCE (W) 2.45 2.25 2.05 VGS = 10V ID = 0.5A 1.85 1.65 1.45 VGS = 4.5V ID = 0.075A 1.25 1.05 0.85 0.65 -55 45 -5 95 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature VGS(th), GATE THRESHOLD VOLTAGE (V) 2 1.8 1.6 ID = 1.0mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -55 -40 -25 -10 5 20 35 50 65 80 95 110 125 140 RDS(ON), DRAIN-SOURCE ON RESISTANCE (W) Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature 8 7 150°C VGS = 2.5V 6 5 25°C 4 3 -55°C 2 1 0 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN CURRENT (A) Fig. 5 Drain-Source On Resistance vs. Drain Current DS30144 Rev. 6 - 2 3 of 5 www.diodes.com BSS138 9 8 VGS = 2.75V 7 6 150°C 5 4 25°C 3 2 -55°C 1 0 0.1 0.05 0 0.15 0.25 0.2 ID, DRAIN CURRENT (A) Fig. 6 Drain-Source On Resistance vs. Drain Current 6 VGS = 4.5V 5 150°C 4 3 2 25°C 1 -55°C 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.45 0.4 0.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Drain-Source On Resistance vs. Drain Current 3.5 VGS = 10V 3 150°C 2.5 2 1.5 25°C 1 -55°C 0.5 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain Current DS30144 Rev. 6 - 2 4 of 5 www.diodes.com BSS138 ID, DIODE CURRENT (A) 1 0.1 150°C -55°C 0.01 25°C 0.001 0 0.2 0.4 0.6 0.8 1.2 1 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 100 C, CAPACITANCE (pF) VGS = 0V f = 1MHz CiSS 10 COSS CrSS 1 0 5 10 15 20 25 30 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain Source Voltage DS30144 Rev. 6 - 2 5 of 5 www.diodes.com BSS138