NLSF308 Quad 2−Input AND Gate The NLSF308 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems. http://onsemi.com Features • • • • • • • • • • • • • 1 High Speed: tPD = 4.3 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 2.0 mA (Max) at TA = 25°C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2.0 V to 5.5 V Operating Range Low Noise: VOLP = 0.8 V (Max) Function Compatible with Other Standard Logic Families QFN−16 Package Latchup Performance Exceeds 300 mA ESD Performance: Human Body Model; > 2000 V; Machine Model; > 200 V Chip Complexity: 24 FETs or 6 Equivalent Gates Pb−Free Package is Available* FUNCTION TABLE Inputs B Y L L H H L H L H L L L H MARKING DIAGRAM ÇÇÇ ÇÇÇ ÇÇÇ 16 1 NLSF 308 ALYW G G NLSF308 = Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Output A QFN−16 MN SUFFIX CASE 485G ORDERING INFORMATION Device NLSF308MNR2 NLSF308MNR2G Package Shipping† QFN−16 3000 / Tape & Reel QFN−16 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 4 1 Publication Order Number: NLSF308/D NLSF308 B2 A3 B3 14 13 12 A4 1 15 1 16 Y1 NC 2 A2 3 B2 4 NLSF308 MN Package 11 NC 3 5 4 Y2 10 Y4 (Top View) Y = AB 8 7 9 10 B3 Figure 1. LOGIC DIAGRAM 5 6 7 8 A3 Y4 Y3 12 13 9 Y3 GND B4 15 Y2 A4 B4 A2 VCC B1 A1 A1 B1 Y1 16 Figure 2. PIN ASSIGNMENT (QFN−16) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Parameter Symbol Value Unit DC Supply Voltage VCC –0.5 to + 7.0 V DC Input Voltage Vin –0.5 to + 7.0 V DC Output Voltage Vout –0.5 to VCC + 0.5 V Input Diode Current IIK −20 mA Output Diode Current IOK ±20 mA DC Output Current, per Pin Iout ±25 mA DC Supply Current, VCC and GND Pins ICC ±50 mA Power Dissipation in Still Air PD 450 mW Storage Temperature Tstg –65 to + 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit DC Supply Voltage VCC 2.0 5.5 V DC Input Voltage Vin 0 5.5 V DC Output Voltage Vout 0 VCC V TA −40 + 85 °C tr, tf 0 0 100 20 ns/V Operating Temperature Input Rise and Fall Time VCC = 3.3 V ±0.3 V VCC = 5.0 V ±0.5 V http://onsemi.com 2 NLSF308 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ DC ELECTRICAL CHARACTERISTICS Parameter Test Conditions Symbol TA = 25°C VCC V Min 1.50 VCC x 0.7 Minimum High−Level Input Voltage VIH 2.0 3.0 to 5.5 Maximum Low−Level Input Voltage VIL 2.0 3.0 to 5.5 VOH 2.0 3.0 4.5 1.9 2.9 4.4 3.0 4.5 2.58 3.94 Minimum High−Level Output Voltage Vin = VIH or VIL IOH = −50 mA Vin = VIH or VIL IOH = −4 mA, IOH = −8 mA Maximum Low−Level Output Voltage VOL Vin = VIH or VIL IOL = 50 mA Max Min Max 1.50 VCC x 0.7 0.50 VCC x 0.3 2.0 3.0 4.5 Vin = VIH or VIL IOL = 4 mA IOL = 8 mA Typ TA = − 40 to 85°C V 0.50 VCC x 0.3 2.0 3.0 4.5 Unit V V 1.9 2.9 4.4 2.48 3.80 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 V Maximum Input Leakage Current Vin = 5.5 V or GND 0 to 5.5 ± 0.1 ± 1.0 mA Maximum Quiescent Supply Current Vin = VCC or GND 5.5 2.0 20.0 mA AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) TA = 25°C Parameter Test Conditions Symbol Maximum Propagation Delay, A or B to Y VCC = 3.3 ± 0.3 V, CL = 15 pF, CL = 50 pF tPLH, tPHL VCC = 5.0 ± 0.5 V, CL = 15 pF, CL = 50 pF Maximum Input Capacitance Cin Min TA = − 40 to 85°C Typ Max Min Max Unit 6.2 8.7 8.8 12.3 1.0 1.0 10.5 14.0 ns 4.3 5.8 5.9 7.9 1.0 1.0 7.0 9.0 4 10 10 pF Typical @ 25°C, VCC = 5.0 V Power Dissipation Capacitance (Note 1) 18 CPD pF 1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per gate). CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V) TA = 25°C Symbol Typ Max Unit Quiet Output Maximum Dynamic VOL VOLP 0.3 0.8 V Quiet Output Minimum Dynamic VOL VOLV −0.3 −0.8 V Minimum High Level Dynamic Input Voltage VIHD 3.5 V Maximum Low Level Dynamic Input Voltage VILD 1.5 V Characteristic http://onsemi.com 3 NLSF308 VCC A or B 50% GND tPLH Y tPHL 50% VCC Figure 3. Switching Waveforms TEST POINT OUTPUT DEVICE UNDER TEST CL * *Includes all probe and jig capacitance Figure 4. Test Circuit INPUT Figure 5. Input Equivalent Circuit http://onsemi.com 4 NLSF308 PACKAGE DIMENSIONS 16 PIN QFN CASE 485G−01 ISSUE C D PIN 1 LOCATION NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. Lmax CONDITION CAN NOT VIOLATE 0.2 MM MINIMUM SPACING BETWEEN LEAD TIP AND FLAG A B ÇÇ ÇÇ ÇÇ E DIM A A1 A3 b D D2 E E2 e K L 0.15 C TOP VIEW 0.15 C (A3) 0.10 C A 16 X 0.08 C SIDE VIEW MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.18 0.30 3.00 BSC 1.65 1.85 3.00 BSC 1.65 1.85 0.50 BSC 0.18 TYP 0.30 0.50 SEATING PLANE A1 C D2 16X e L 5 NOTE 5 EXPOSED PAD 8 4 9 E2 16X K 12 1 16 16X 13 b 0.10 C A B 0.05 C e BOTTOM VIEW NOTE 3 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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