NUP2114UCMR6 Transient Voltage Suppressors Low Capacitance ESD Protection for High Speed Data http://onsemi.com The NUP2114UCMR6 transient voltage suppressor is designed to protect high speed data lines from ESD. Ultra−low capacitance and high level of ESD protection makes this device well suited for use in USB 2.0 high speed applications. I/O VP Features • • • • • • • • Low Capacitance 0.8 pF Low Clamping Voltage Stand Off Voltage: 5 V Low Leakage ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model and Class C (Exceeding 400 V) per Machine Model IEC61000−4−2 Level 4 UL Flammability Rating of 94 V−0 This is a Pb−Free Device Typical Applications • • • • High Speed Communication Line Protection USB 2.0 High Speed Data Line and Power Line Protection Gigabit Ethernet Notebook Computers I/O MARKING DIAGRAM 1 TSOP−6 CASE 318G 1 P2M = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Lead Solder Temperature − Maximum (10 Seconds) TL 260 °C Human Body Model (HBM) Machine Model (MM) IEC61000−4−2 Contact IEC61000−4−2 Air ESD 16000 400 13000 15000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. See Application Note AND8308/D for further description of survivability specs. P2M MG G PIN CONNECTIONS I/O 1 6 I/O VN 2 5 VP NC 3 4 NC ORDERING INFORMATION Device NUP2114UCMR6T1G Package Shipping TSOP−6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 January, 2010 − Rev. 4 1 Publication Order Number: NUP2114UCMR6/D NUP2114UCMR6 ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) IF Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR Working Peak Reverse Voltage VBR Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation V IR VF IT Breakdown Voltage @ IT IT C VC VBR VRWM Maximum Reverse Leakage Current @ VRWM IPP Max. Capacitance @ VR = 0 and f = 1.0 MHz Uni−Directional TVS *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol VRWM VBR Conditions Min Typ 6.0 7.5 (Note 1) IT = 1 mA, (Note 2) Max Unit 5.0 V V Reverse Leakage Current IR VRWM = 5 V 1.0 Clamping Voltage VC IPP = 5 A (Note 3) 9.0 V Clamping Voltage VC IPP = 8 A (Note 3) 10 V Maximum Peak Pulse Current IPP 8x20 ms Waveform Junction Capacitance CJ VR = 0 V, f = 1 MHz between I/O Pins and GND Junction Capacitance CJ VR = 0 V, f = 1 MHz between I/O Pins Clamping Voltage VC @ IPP = 1 A (Note 4) Clamping Voltage VC Per IEC 61000−4−2 (Note 5) 0.8 mA 12 A 1.0 pF 0.5 pF 12 V Figures 1 and 2 V 1. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 2. VBR is measured at pulse test current IT. 3. Nonrepetitive current pulse (Pin 5 to Pin 2) 4. Surge current waveform per Figure 5. 5. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 http://onsemi.com 2 NUP2114UCMR6 IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec ESD Gun Oscilloscope TVS 50 W Cable 50 W Figure 4. Diagram of ESD Test Setup The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 Figure 5. 8 X 20 ms Pulse Waveform http://onsemi.com 3 80 NUP2114UCMR6 Figure 6. 500 MHz Data Pattern http://onsemi.com 4 NUP2114UCMR6 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE U D H ÉÉÉ ÉÉÉ 6 E1 1 NOTE 5 5 2 L2 4 GAUGE PLANE E 3 L b C DETAIL Z e 0.05 M A SEATING PLANE c A1 DETAIL Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. DIM A A1 b c D E E1 e L L2 M MIN 0.90 0.01 0.25 0.10 2.90 2.50 1.30 0.85 0.20 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 2.75 3.00 1.50 1.70 0.95 1.05 0.40 0.60 0.25 BSC 10° − RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 6X 3.20 0.95 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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