KSC839 KSC839 FM/AM RADIO RF AMP, CONV, OSC, IF AMP • Current Gain Bandwidth Product : fT=200MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 35 Units V VCEO VEBO Collector-Emitter Voltage 30 V Emitter-Base Voltage 4 IC V Collector Current 100 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 Min. 35 BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 30 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 4 ICBO Collector Cut-off Current VCB=30V, IE=0 IEBO Emitter Cut-off Current VEB=4V, IC=0 DC Current Gain VCE=12V, IC=2mA 40 0.65 VBE (on) Base-Emitter On Voltage VCE=6V, IC=1mA Collector-Emitter Saturation Voltage IC=10mA, IB=1mA fT Current Gain Bandwidth Product VCE=10V, IC=1mA Cob Output Capacitance VCB=10V, IE=0, f=1MHz Max. Units V V V hFE VCE (sat) Typ. 80 0.1 µA 0.1 µA 400 0.70 0.75 0.1 0.4 V V 200 2.0 MHz 3.5 pF hFE Classification Classification R O Y G hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC839 Typical Characteristics 1000 9 IB = 90µA 8 IB = 80µA 7 IB = 70µA 6 IB = 60µA 5 IB = 50µA 4 IB = 40µA 3 IB = 30µA 2 IB = 20µA 1 IB = 10µA VCE=12V hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 10 100 10 0 0 1 2 3 4 5 6 7 8 9 10 1 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 2. DC current Gain 10 10 IC=10IB 1 f = 1MHz IE=0 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic VBE(sat) VCE(sat) 0.1 0.01 0.1 1 10 IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 10 1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 4. Collector Output Capacitance 1000 VCE=10V 100 10 1 10 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC839 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1